A5045002663- Diamond and Carbon-based Materials Research
- Silicon Carbide Semiconductor Technologies
- Silicon and Solar Cell Technologies
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- High-pressure geophysics and materials
- Physics of Superconductivity and Magnetism
- Electronic and Structural Properties of Oxides
- Advanced Materials Characterization Techniques
- Electrostatic Discharge in Electronics
- Semiconductor Quantum Structures and Devices
- Ion-surface interactions and analysis
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Nanostructures and Photoluminescence
- Force Microscopy Techniques and Applications
- Superconductivity in MgB2 and Alloys
- Semiconductor materials and interfaces
- Surface and Thin Film Phenomena
- Photonic and Optical Devices
- Rare-earth and actinide compounds
- Advanced Fiber Laser Technologies
- Laser Material Processing Techniques
- Laser-Matter Interactions and Applications
- Optical measurement and interference techniques
Groupe d’Étude de la Matière Condensée
2007-2023
Centre National de la Recherche Scientifique
2008-2023
Université de Versailles Saint-Quentin-en-Yvelines
2005-2017
Université Paris-Saclay
2017
Laboratoire des systèmes et applications des technologies de l'information et de l'énergie
2015
CY Cergy Paris Université
2015
Université Paris-Sud
2009-2012
Institut Supérieur d'Électronique de Paris
2011
Université Paris Cité
2011
Direction de la Recherche Fondamentale
2009
We show that a significant enhancement of the direct band gap photoluminescence can be achieved at room temperature in bulk Ge and Ge-on-insulator heavily n-doped by gas immersion laser doping. The signal from increases with donor concentration. An factor 20 as compared to undoped material is near 1550 nm wavelength for active dopant concentrations around 5×1019 cm−3. These results are supported calculations spontaneous emission spectrum taking into account doping effect on electron...
The value of the impurity-to-band activation energy EA a dopant is basic feature electrical conductivity semiconductors. Various techniques were used to determine in n-type diamond doped with phosphorus, giving values varying from 0.43 eV 0.63 eV, 0.6 being commonly accepted for ionization phosphorus donors diamond. Nevertheless, up now, dispersion experimental remains unexplained. In this work, we investigate properties set homoepitaxial films different concentrations by Hall effect...
Abstract Until now, phosphorus is the best substitutional dopant for n‐type diamond. Its incorporation usually achieved using phosphine gas. However, organic precursors of have been recently investigated. Among them, tertiarybutylphosphine (TBP) appears as an alternative to phosphine. In this report, we investigate doping diamond with liquid TBP metal‐organic chemical vapour deposition (MOCVD) technology incorporation. Our first results precursor are compared published gaseous phosphorus. (©...
In n-type diamond doped with phosphorus, exciton properties have been investigated by cathodoluminescence as a function of the phosphorus concentration and temperature. The homoepitaxial layers were grown microwave plasma-assisted chemical vapor deposition using liquid organic precursor (tertiarybutylphosphine). ranges from 5.2×1016 to 3.3×1018 cm−3 measured secondary ion mass spectrometry. It is shown that ratio between luminescence intensities neutral phosphorus-bound free follows dopant...
We report on a detailed analysis of the superconducting properties boron-doped silicon films grown along 001 direction by gas immersion laser doping. The doping concentration ${c}_{B}$ has been varied up to $\ensuremath{\sim}10\text{ }\text{at}\text{.}\text{ }%$ increasing number shots 500. No superconductivity could be observed down 40 mK for level below $\ensuremath{\sim}2\text{ }%$. critical temperature ${T}_{c}$ then increased steeply reach $\ensuremath{\sim}0.6\text{ }\text{K}$...
Abstract The silicon incorporation in diamond is an important issue as widely used a substrate for the growth of polycrystalline thin films. Incorporated impurities are suspected to come from hydrogen etching substrate. To clearly establish this point we introduced solid source during homoepitaxial layer on HPHT A quantitative SIMS analysis revealed concentrations up 3 × 10 19 cm –3 layer. Then propose scenario contamination grown substrates: after nucleation, progressive paving surface by...
We report on the superconducting properties of a series heavily doped Si:B epilayers grown by gas immersion laser doping with boron content (${n}_{B}$) ranging from $\ensuremath{\sim}3\ifmmode\times\else\texttimes\fi{}{10}^{20}$ cm${}^{\ensuremath{-}3}$ to $\ensuremath{\sim}6\ifmmode\times\else\texttimes\fi{}{10}^{21}$cm${}^{\ensuremath{-}3}$ and thickness ($d$) varying between $\ensuremath{\sim}20$ nm $\ensuremath{\sim}210$ nm. show that superconductivity is only observed for ${n}_{B}$...
The lack of a shallow donor in diamond with reasonable room temperature conductivity has been major obstacle, until now, for the realization many based electronic devices. Most recently it shown that exposure p-type (B doped) homoepitaxial layers to deuterium plasma can result formation n-type state (Ea=0.34eV) and high mobility (430cm2∕Vs) [Z. Teukam et al., Nat. Mater. 2, 482 (2003); C. Saguy Diamond Relat. 13, 700 (2004)]. Experimental results, on comparison secondary ion mass...
We report on the superconducting properties of heavily doped silicon epilayers obtained by implantation B atoms in wafers and subsequent laser annealing (pulsed induced epitaxy). A critical temperature ∼250 mK has been for samples with a boron concentration (cB) ranging from 2 to 10 at.%, which were checked atom probe tomography be free any significant clustering. The standard dopant technique is therefore an alternative (with respect gas immersion doping) process induce superconductivity...
Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms incorporated into crystalline in the atomic percent concentration range, well above their solubility limit, without creating clusters or precipitates at scale. spatial distribution is found to be compatible with local density of states measurements performed scanning tunneling...
We show that deuteration of a series boron-doped (100) diamond epitaxial layers can lead to p-type n-type conversion. The epilayers have electrical conductivities few S/cm at 300 K. These values are factor 103–105 higher than the achieved with phosphorus doping. This is consequence shallow donor character deuterium-related donors inducing conversion (ionization energy 0.34 eV) and high concentrations. also these formed in two-step process. First, all acceptors form (B, D) complexes one...
Abstract In n‐type diamond doped with phosphorus, exciton properties have been investigated by cathodoluminescence as a function of the phosphorus concentration. A series homoepitaxial layers were grown microwave plasma‐assisted chemical vapor deposition and liquid organic precursor (tertiarybutylphosphine). Their concentration ranges from 5.2 × 10 16 cm –3 to 3.3 18 measured secondary ion mass spectrometry. It is shown that ratio between luminescence intensities neutral phosphorus‐bound...
Scanning tunneling spectroscopies in the subKelvin temperature range were performed on superconducting Silicon epilayers doped with Boron atomic percent range. The resulting local differential conductance behaved as expected for a homogeneous superconductor, an energy gap dispersion below +/- 10%. spectral shape, amplitude and dependence of superconductivity follow BCS model, bringing further support to hypothesis hole pairing mechanism mediated by phonons weak coupling limit.
For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased remains functional after cross sections. Sample preparation presented, electrical characterizations of a diode IGBT (600 V-200 A) have been performed steady on-state. Infrared thermography on cross-section surface using macro-lens with high spatial resolution has allowed characterizing vertical thermal distribution inside power...