A method is proposed to account for the effects of Schottky barrier height inhomogeneities on Richardson constant (A∗) extracted from current-voltage-temperature (I-V-T) measurements. Our approach exploits a correlation between and effective height. As test case, applied I-V-T measurements performed IrOx/n-ZnO diodes. homogeneous A∗ value 27±7 cm−2 K−2 obtained, in close agreement with theoretically expected 32 n-type ZnO.

Isothermal annealing of electron-irradiated Czochralski silicon samples (n-type) has been performed at 335 °C. The process was studied using deep-level transient spectroscopy (DLTS) and photoluminescence (PL). dominating level in the DLTS spectra directly after irradiation is located ∼0.18 eV below conduction band previously assigned to a vacancy-oxygen center by other authors. During anneal concentration centers decreases, simultaneously new level, ∼0.20 band, grows up. It shown that defect...

Two types of damage mechanisms resulting from polysilicon gate dry etching are identified in 0.5 μm NMOS transistors. One type is found to be active even after full processing and result positive charge at the edge oxide. It have no correlation with antenna ratio attributable direct plasma bombardment. The other passivated but it activated by electrical stress. After activation, this an increasing function as well overetch percentage. This second charging.

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTFree radicals in x-irradiated single crystals of sucrose: a reexaminationE. Sagstuen, A. Lund, O. Awadelkarim, M. Lindgren, and J. WesterlingCite this: Phys. Chem. 1986, 90, 22, 5584–5588Publication Date (Print):October 1, 1986Publication History Published online1 May 2002Published inissue 1 October 1986https://pubs.acs.org/doi/10.1021/j100280a022https://doi.org/10.1021/j100280a022research-articleACS PublicationsRequest reuse permissionsArticle...

We present a microscopic identification of hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection magnetic resonance. The symmetry this has been deduced as ${\mathit{C}}_{2\mathit{v}}$, and from the observed hyperfine interactions is identified di-hydrogen--vacancy complex, where H atoms passivate two four dangling bonds monovacancy. A spin-triplet lowest electronic excited state defect, which exhibits strong...

Bias Temperature Instability (BTI) measurements were performed on SiC n-channel DMOSFETs. The effects of the BTI stress electrical characteristics device studied using slow and fast measurements. Measurements show that change in threshold voltage (Vth) can be attributed to charge carrier trapping/de-trapping at border traps, while interface trapped density is found unaffected. measurements, however, shows significant Vth recovery taking place in-situ during measurement. Moreover, shift...

Extraction of the Richardson constant and Schottky barrier height from current-voltage-temperature (I−V−T) characteristics contacts is greatly influenced by a variety nonideal effects. Starting with an overview original plot relevant modifications plot, this article discusses limitations previous analytical approaches that attempt to account for effects inhomogeneities on extracted constant. A temperature-driven fundamental change in current conduction inhomogeneous diode dominated low...

In this work we compared AC and DC bias temperature instability (BTI) degradations induced by stressing the channel Junction-FET regions in 4H polytype n-channel Silicon Carbide (SiC) based power MOSFETs. We observed that degradation caused BTI stress is dependent on device technology generation unlike degradation, which found to be independent of generation. Also, causes more permanent damage due creation interface traps border contrast where only are responsible for degradation.

We report the results of a comparative study damage induced in boron-doped Si by contact etching. The two approaches compared are conventional reactive ion etching and magnetically enhanced (MERIE). structure-chemistry combinations used SiO2/Si with CHF3/O2 plasmas, bare wafers CHF3/Ar plasmas. examined substrates both structures is that electronic states band gap, permeation into hydrogen, deactivation boron acceptors. These types explored means deep level transient spectroscopy...

Efficient radiative defects are introduced in boron-doped silicon by carbon- and oxygen-ion implantations subsequent annealing up to 500 \ifmmode^\circ\else\textdegree\fi{}C. They exhibit sharp intense low-temperature photoluminescence transitions a range between 767.0 meV (P line) 1080.0 (Y line). From correlations the line intensities oxygen carbon contents samples, it is argued that P center H (925.4 meV) oxygen-related defects. The L (1003.8 influenced carbon, appears be independent of...

New experimental results are presented which provide evidence for hydrogen passivation and depassivation of plasma-charging-induced defects in gate oxides at oxide/silicon interfaces. The devices used this study were 0.5 μm n-channel metal–oxide–semiconductor field-effect transistors fabricated on 200 mm boron-doped silicon substrates. processing included Cl2/HBr-based chemistries the polycrystalline definition etch, CHF3/CF4-based contact etch. Plasma-charging resulting from shown to have...

The effect of reactive-ion etching (RIE) and plasma (PE) using deuterium on the electrical properties boron-doped p-type silicon has been studied employing junction capacitance measurements Schottky diodes. Deep-level transient spectroscopy (DLTS) treated samples revealed presence a number previously unreported near-surface traps. These comprise hole traps H(0.44) H(0.54) at 0.44 0.54 eV above valence band, respectively, an electron trap E(0.46) 0.46 below conduction band. observed directly...

Abstract In this study we performed slow and fast bias temperature instability (BTI) measurements on n-channel silicon carbide (SiC) metal-oxide-SiC field effect transistors. Threshold voltage ( V th ) shifts as well recovery observed during after stress applied at different temperatures levels were used to understand the dynamics of charge trapping/capture detrapping/emission gate oxide defects. It is deduced from results that no new defects are created by in due injected electron capture...

The impact of poly-Si gate plasma etching on the hot electron reliability submicron NMOS transistors has been explored. results show that oxide and SiO/sub 2/-Si interface near drain junction have a susceptibility to injection increases with overetch time. We for first time this degradation is attributable edge type damage resulting from direct exposure during processing. demonstrate does not scale channel length becomes even more important in shorter transistors.< <ETX...

Parylene-C microfibrous thin films (μFTFs), grown using oblique-angle physicochemical vapor deposition, were examined for potential use as low-relative permittivity (i.e., low-κ) interlayer dielectrics in integrated circuits and, more importantly, flexible electronics. These characterized capacitance-voltage-temperature (CVT) and current-voltage-temperature experiments at different temperatures (ranging from 298 to 420 K) frequencies 1 kHz MHz). Field emission scanning electron microscopy...

The radical ion N2H+4 has been produced by x irradiating single crystals of hydrazinium hydrogen oxalate (N2H5HC2O4) and studied ESR ENDOR spectroscopy. structure the trapping site elucidated observing 1H transitions not only from but also distant protons. One latter originates proton lost N2H+5 upon formation. Evidence that transfer occurs through a bond is presented.

Phononic bandgaps of Parylene-C microfibrous thin films (muFTFs) were computationally determined by treating them as phononic crystals comprising identical microfibers arranged either on a square or hexagonal lattice. The could be columnar,chevronic, helical in shape, and the host medium water air. All observed to lie 0.01-to-162.9-MHz regime, for realistically chosen dimensions. upper limit frequency was highest columnar muFTF lowest chiral muFTF. More exist when is than Complete with...