Rohit Sharma

ORCID: 0000-0002-7795-7551
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About
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Research Areas
  • Low-power high-performance VLSI design
  • 3D IC and TSV technologies
  • Electromagnetic Compatibility and Noise Suppression
  • Graphene research and applications
  • Semiconductor materials and devices
  • Copper Interconnects and Reliability
  • Carbon Nanotubes in Composites
  • Advanced Memory and Neural Computing
  • Electronic Packaging and Soldering Technologies
  • VLSI and FPGA Design Techniques
  • Molecular Junctions and Nanostructures
  • Advanced Photonic Communication Systems
  • Semiconductor Lasers and Optical Devices
  • Advanced Optical Network Technologies
  • Optical Network Technologies
  • Interconnection Networks and Systems
  • Advancements in Semiconductor Devices and Circuit Design
  • Ferroelectric and Negative Capacitance Devices
  • Neuroscience and Neural Engineering
  • Integrated Circuits and Semiconductor Failure Analysis
  • Electrostatic Discharge in Electronics
  • Advancements in Battery Materials
  • Silicon Carbide Semiconductor Technologies
  • Energy Harvesting in Wireless Networks
  • VLSI and Analog Circuit Testing

Indian Institute of Technology Ropar
2016-2025

Pennsylvania State University
2023-2024

Shobhit University
2024

Jain University
2024

Ambedkar University Delhi
2020

Indian Institute of Technology Delhi
2018

Indian Institute of Technology Indore
2015

Georgia Institute of Technology
2011-2012

Dr. B. R. Ambedkar National Institute of Technology Jalandhar
2011

Seoul National University
2010

In this paper, we are proposing novel analytical time domain models for side contact and top multilayer graphene nanoribbon (MLGNR) interconnects. Our proposed give physical insights about the transient behavior of these MLGNRs. The have been verified with existing data as well exhaustive simulation exhibit excellent accuracy. Based on our analysis, identify limiting factors that need to be considered design optimum MLGNRs exceed performance copper match MLGNR Finally, compare optical...

10.1109/jstqe.2013.2272458 article EN IEEE Journal of Selected Topics in Quantum Electronics 2013-08-01

This paper establishes the importance of lithium (Li) intercalation in multilayer graphene nanoribbon (MLGNR) interconnects for obtaining superior performance than conventional copper (Cu) on-chip interconnects. For first time, we report analysis Li-intercalated MLGNRs local interconnect applications. In that, thickness is optimized lowest delay and energy-delay-product (EDP). At 12 μm length, our exhibit (≈ 22.9 ps)1.9x 4.1x lower EDP, respectively, when compared to Cu. Even presence edge...

10.1109/jeds.2016.2614813 article EN cc-by-nc-nd IEEE Journal of the Electron Devices Society 2016-10-10

In this article, an artificial neural network (ANN) is developed in order to predict the per-unit-length (p. u. l.) parameters of hybrid copper-graphene on-chip interconnects from a prior knowledge their structural geometry and layout. The salient feature proposed ANN that it combines p. l. extracted empirical models along with rigorous full-wave electromagnetic solver. As result, referred as knowledge-based (KBNN). KBNN has been found converge same accuracy conventional but at expense far...

10.1109/temc.2021.3091714 article EN IEEE Transactions on Electromagnetic Compatibility 2021-07-21

10.1007/s00034-020-01421-x article EN Circuits Systems and Signal Processing 2020-04-25

An integrated circuit (IC), or chip, is a set of electronic circuits and components placed on tiny planar silicon (Si) semiconductor substrate. These electronics are electrically connected to one another with the help vertical conductor elements known as <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">interconnects</i> . This article presents detailed overview evolution interconnects, highlighting technological milestones that have been...

10.1109/mmm.2021.3136268 article EN IEEE Microwave Magazine 2022-07-07

Frequency and time domain models are developed for backplane (BP), printed circuit board (PCB), silicon interposer (SI) links using six-port transfer matrices (ABCD matrices) bumps, vias connectors, coupled multiconductor transmission lines traces. The matrix approach enables easy computation of the function, as well near-end far-end crosstalk. intersymbol interference is accounted by computing pulse response worst case bit pattern. Furthermore, here used to optimize data-rate trace width...

10.1109/tcpmt.2014.2326798 article EN IEEE Transactions on Components Packaging and Manufacturing Technology 2014-06-19

In this article, the importance of edge-passivation with transition metals (TM) in armchair graphene nanoribbons (AGNRs) is described for interconnect applications. The electronic and transport properties TM edge-passivated AGNRs structure found to be exceptional comparison hydrogen AGNRs. Detailed analysis binding energy, E-k diagram, density states (DOS), transmission spectrum, current-voltage characteristics number conduction channels configuration has been performed using functional...

10.1109/tnano.2020.3048734 article EN IEEE Transactions on Nanotechnology 2021-01-01

In this article, machine learning (ML) metamodels have been developed in order to predict the per-unit-length parameters of hybrid copper–graphene on-chip interconnects based on their structural geometry and layout. ML within context article include artificial neural networks, support vector machines (SVMs), least-square SVMs. The salient feature all these is that they exploit prior knowledge p.u.l. obtained from cheap empirical models reduce number expensive full-wave electromagnetic (EM)...

10.1109/temc.2022.3205869 article EN IEEE Transactions on Electromagnetic Compatibility 2022-09-22

Due to their higher resistance, single layer graphene nanoribbons (GNRs) are not suitable for high-speed on-chip interconnect applications. Hence, we use multilayer GNRs (MLGNRs) that offer multiple conduction channels and lower resistance. However, MLGNRs turn into graphite as the number of layers increase, which reduces mean-free path each layer. Insertion a dielectric between GNR prevents its conversion graphite, thereby improving scattering rate. In this paper, proposing an analytical...

10.1109/tetc.2015.2486748 article EN cc-by IEEE Transactions on Emerging Topics in Computing 2015-10-09

Planar copper interconnects suffer from surface roughness that results in performance degradation. This paper presents a novel analytical model for calculation effective resistivity and mean free path on-chip interconnects. The closed form expressions are obtained generalized grain boundary scattering approach is combined with Mandelbrot-Weierstrass (MW) fractal function. It observed increases while reduces significantly rough when compared of smooth lines. Current future technology nodes...

10.1109/tetc.2016.2597542 article EN IEEE Transactions on Emerging Topics in Computing 2016-08-03

In this article, we propose the application of a 2-D spectral transposed convolutional neural network (S-TCNN) with extrapolation to reduce number trainable parameters during upsampling process, leading reduced training time and decrease in computational resources. Our proposed model consists three stages, namely prediction stage that uses high-accuracy S-TCNN predict partial frequency responses; takes output Gaussian process (GP) construct mean covariance matrix; range determining responses...

10.1109/tcpmt.2023.3317851 article EN IEEE Transactions on Components Packaging and Manufacturing Technology 2023-09-21

In planar on-chip copper interconnects, conductor losses due to surface roughness demands explicit consideration for accurate modeling of their performance metrics. This is quite pertinent high-performance manycore processors/servers, where interconnects are increasingly emerging as one the key bottlenecks. paper presents a novel analytical model parameter extraction in current and future interconnects. Our proposed aids analyzing impact spatial vertical on electrical performance. analysis...

10.1109/tmscs.2017.2696941 article EN IEEE Transactions on Multi-Scale Computing Systems 2017-04-24

This paper proposes a complete CMOS realized neuromorphic system for pattern recognition having CMOS-based memristor emulators as synaptic circuits. The crossbar array of the is modeled by considering emulator circuit&#x0027;s area to determine spacing between interconnects. interconnect parasitics are obtained from ANSYS Q3D extractor. Parasitics extracted also validated using analytical model. A architecture with parasitic components and will provide an understanding behavior can be used...

10.1109/tnano.2022.3190903 article EN IEEE Transactions on Nanotechnology 2022-01-01

In this article, a modified knowledge-based artificial neural network (KBANN) metamodel is developed for the efficient uncertainty quantification of on-chip multiwalled carbon nanotube (MWCNT) interconnects. The proposed KBANN utilizes notion control variates to enable much faster training than what possible with standard KBANNs. Importantly, techniques calculate optimal value in an priori manner without augmenting dataset have been article. Furthermore, exploit depending on whether one or...

10.1109/temc.2023.3279695 article EN IEEE Transactions on Electromagnetic Compatibility 2023-06-15

An analytical model for the computation of equivalent capacitance in top‐contact and side‐contact multilayer graphene nanoribbon interconnects is presented, taking into consideration interlayer coupling. On basis this model, it observed that a dominant factor severely degrades performance interconnects. The proposed verified with simulation data obtained using Synopsys Raphael exhibits excellent accuracy. Further, theoretical framework improvement key interconnect indices such as delay,...

10.1049/mnl.2015.0017 article EN Micro & Nano Letters 2015-08-01

With traditional power delivery architectures in state-of-the-art high-power (>1 kW) high-current density systems A/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ), over 30% of the system-wide is dissipated within system, i.e., during from a printed circuit board (PCB) to functional die(s). Historically, systems, efficient low-power voltage regulators have been placed on PCB, minimize conversion loss and advanced low-resistance...

10.1109/ectc51529.2024.00364 article EN 2024-05-28

In this article, artificial neural network (ANN) metamodels have been developed for the fast statistical signal integrity analysis of multiwalled carbon nanotube and multilayer graphene nanoribbon interconnect networks. These ANN metamodels, referred to as primary ANNs, are trained using transfer learning strategies where initial guess weights bias terms learned from a pretrained secondary ANN. The is data extracted cheap approximate equivalent single conductor model interconnects. Starting...

10.1109/temc.2024.3360279 article EN IEEE Transactions on Electromagnetic Compatibility 2024-02-12

In this paper we present the design and fabrication of air-clad planar transmission lines TSVs that can be used as horizontal vertical chip-chip interconnects. Performance improvement by using heterogeneous dielectric is presented for these two types interconnect structures establishes basic motivation fabricating structures. The data verified performing simulation 3D full-wave solver HFSS. We outline process flow in detail. Several challenges are also discussed.

10.1109/ectc.2012.6249115 article EN 2012-05-01

Colloidal synthesized metal nanoparticles (NPs) have great potential to be utilized as economically viable and efficient charge storage floating gate for the non-volatile memory (NVM). Present research work focuses on NVM device application of colloidal cobalt (Co) NPs using simple spin coating process. The metal-oxide-semiconductor (MOS) capacitor devices with without Co-NPs average size 5 nm been fabricated. MOS control tunnel oxide (SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/tsm.2018.2841661 article EN IEEE Transactions on Semiconductor Manufacturing 2018-05-29

In this paper, a crossbar structure with CMOS based memristor emulator is presented where the spacing between modeled as per circuit's area for real-time design. The interconnect dimension in corresponds to 180 nm technology, and parasitics of are extracted using ANSYS Q3D extractor. parasitic components used design RC circuit model analyze signal delay different states sizes Cadence Virtuoso platform. results architecture provide an insight into how gets affected by state varying load...

10.1109/mwscas47672.2021.9531867 article EN 2021-08-09

An all-optical four-fiber bidirectional line-switched ring (O-4F/BLSR) architecture is proposed. This new physical layer networking protocol uses wavelengths as tributaries and an optical supervisory channel to carry overhead information. Optical channels can be added dropped from the ring, virtual wavelength paths provisioned. Both node link failures of a network protected through two protection scheme. Protection switching within multiplex section (OMS) restores failure caused by loss...

10.1109/50.779150 article EN Journal of Lightwave Technology 1999-01-01

Utilizing network-on-chips for manycore SoCs has already been studied widely, as traditional bus-based architectures are unlikely to endure so many inter-core communications. Since device scaling come a limit, the technology trend now is stacking dies three-dimensionally obtain more silicon area and shorter wire length. The most challenging part making 3D chip inter-layer communication method. Currently, TSV popular promising technique provide best performance. However, it suffers from...

10.1109/isocc.2011.6138783 article EN International SoC Design Conference 2011-11-01
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