A5091301750- Advanced Surface Polishing Techniques
- Advanced machining processes and optimization
- Diamond and Carbon-based Materials Research
- Force Microscopy Techniques and Applications
- Laser Material Processing Techniques
- Advanced Machining and Optimization Techniques
- Advanced Measurement and Metrology Techniques
- Surface Roughness and Optical Measurements
- Adhesion, Friction, and Surface Interactions
- Metal and Thin Film Mechanics
- Nanofabrication and Lithography Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Additive Manufacturing and 3D Printing Technologies
- Industrial Vision Systems and Defect Detection
- Optical measurement and interference techniques
- Engineering Applied Research
- Surface Modification and Superhydrophobicity
- Manufacturing Process and Optimization
- Laser and Thermal Forming Techniques
- 3D IC and TSV technologies
- Semiconductor Lasers and Optical Devices
- Image Processing Techniques and Applications
- Microfluidic and Bio-sensing Technologies
- Photonic and Optical Devices
- Surface and Thin Film Phenomena
Ibaraki University
2015-2024
Hitachi (Japan)
2013-2024
The University of Tokyo
2017-2024
Tokyo University of Technology
2022-2024
St. Marianna University School of Medicine
2023
Ehime University
2017-2018
Dexerials (Japan)
2017
Utsunomiya University
2015
Panasonic (Japan)
2006-2009
Self-Defense Forces Central Hospital
2002-2008
We present a GaN monolithic inverter IC on Si substrate and successful motor-drive by it for the first time. Taking advantages of bi-directional operation free from forward voltage off-set, can be operated just integrated six GaN-based normally-off gate injection transistors (GITs) without any external fast recovery diodes (FRDs) to flow fly-wheel current. The enables efficiency as high 93% at low power where so far that conventional Si-based inverters has remained lower value owing off-set....
The demand for ultra-thin silicon wafers has escalated in recent years with the rapid development of miniaturized electronic devices. In this work, diamond grinding thinning was carried out on an ultra-precision machine. performance and minimum wafer thickness were investigated under different conditions. It found that grain depth cut used to characterize overall conditions played important role determination final performance. relationship between subsurface damage ground achieved also revealed.
Several molecular dynamics simulations are performed, in order to clarify the atomic-scale stick-slip phenomenon which is commonly observed surface measurement using an atomic fine microscope (AFM). In simulations, a specimen and slider assumed consist of monocrystalline copper rigid diamond, respectively, Morse potential postulated between pair atoms. Atomic behavior plane corresponding (111) crystal simulated, dealing with planar strain problem where effect three-dimensional interatomic...
The demand for ultra-thin silicon wafers has escalated in recent years with the rapid development of miniaturized electronic devices. Residual stress generated thinning process a great influence on machining quality wafers. This work developed 2D axisymmetric finite element (FE) model to predict deflection and full-field residual ground FE consists two-layer structures, i.e. damage layer induced by bulk crystal without defects. A series uniform in-plane strains is applied simulate...
We investigated the pathological appearance of acute inflammation and its role in development demyelination reperfused rat sciatic, tibial, peroneal nerves after a 5-hour period near-complete ischemia. Polymorphonuclear neutrophil migration was seen early endoneurial lesion. After 18 hours reperfusion, there maximal intercellular adhesion molecule-1 expression on vessels, polymorphonuclear accumulation then prominent, reaching peak 24 reperfusion. Endoneurial mononuclear macrophages...
Grinding process on the Si wafer develops subsurface damage, which remarkably degrades deflective strength of and constitutes a barrier against producing thin for low-profile packaging. In this paper, authors propose new index evaluation Degree Subsurface Damage (DSD). Requiring no costly instrument, is easily calculated via external geometry ground wafer. With index, it able to quantitatively evaluate damage introduced by different processes (or wheel) estimate minimally achievable...