A5103017007- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- High voltage insulation and dielectric phenomena
- ZnO doping and properties
- Advanced Semiconductor Detectors and Materials
- Magnetic properties of thin films
- Silicon Carbide Semiconductor Technologies
- Molecular Junctions and Nanostructures
- Organic Electronics and Photovoltaics
- Thin-Film Transistor Technologies
- Quantum and electron transport phenomena
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Advancements in Photolithography Techniques
- Advanced Thermoelectric Materials and Devices
- Silicon and Solar Cell Technologies
- Graphene research and applications
- Copper Interconnects and Reliability
- Ga2O3 and related materials
- Crystallography and Radiation Phenomena
- Surface Roughness and Optical Measurements
- Acoustic Wave Resonator Technologies
- Thermal Analysis in Power Transmission
- Advanced X-ray Imaging Techniques
- Electronic and Structural Properties of Oxides
Montanuniversität Leoben
1983-2022
COI Ceramics (United States)
2016
TU Dresden
2013-2014
Lawrence Livermore National Laboratory
2001-2002
Lawrence Berkeley National Laboratory
2001
University of Stuttgart
1993-1997
Commercial EUV lithographic systems require multilayers with higher reflectance and better stability than those published to date. This work represents our effort meet these specifications. Interface-engineered Mo-Si 70% 0.545-nm bandwidth at 13.5-nm wavelength 71% 0.49-nm 12.7-nm were developed. These results achieved 50 bilayers. new consist of alternating Mo Si layers separated by thin boron carbide layers. Depositing on the interfaces leads reduction in molybdenum silicide formation...
In order to satisfy the metrology requirements of multilayer coatings for EUVL optics and masks, improvements have been made reflectometry beamline at Advanced Light Source. The precision in determining peak reflectance wavelength has improved by reducing measurement noise. a typical Mo/Si can now be measured with 0.08% rms (relative) centroid 0.007% rms. It possible determine contribution scattered light spectral purity. Under conditions accounts about 1.3% incident beam. With an...
The unique density of states and exceptionally low electrical noise allow graphene-based field effect devices to be utilized as extremely sensitive potentiometers for probing charge transfer with adsorbed species. On the other hand, molecular level alignment at interface electrodes can strongly influence performance organic-based devices. For this reason, interfacial band engineering is crucial potential applications graphene/organic semiconductor heterostructures. Here, we demonstrate...
Commercial EUV lithographic systems require multilayers with higher reflectance and better stability then that published to date. This work represents our effort meet these specifications. Interface-engineered Mo/Si 70% at 13.5 nm wavelength (peak width of 0.545 nm) 71% 12.7 0.49 were developed. These results achieved 50 bilayers. new consist Mo Si layers separated by thin boron carbide layers. Depositing on interfaces leads reduction in silicide formation the Mo-on-Si interfaces. Bilayer...
The optical transitions of vanadium ${\mathrm{V}}^{4+}$(${3\mathrm{d}}^{1}$) on the hexagonal lattice site (h) 6H-silicon carbide are studied by Fourier-Zeeman spectroscopy. Zeeman splitting four zero-phonon lines is completely resolved. We first obtain effective g factors from splitting. In a second step we apply crystal-field description which successfully describes all spectroscopic data. also discuss role Jahn-Teller coupling in excited state.
We report an electrical breakdown (EBD) at metal/ZnO junctions in varistors with Ag-Pd and Pd electrodes. It was found that these show Schottky behaviour a mean barrier height (SBH) of 0.70 ± 0.07 eV for Bi-based (80−20 %) electrodes SBH 0.47 0.03 Pr-based All investigated electrode-to-grain (EGJ) exhibited EBD the reverse current direction, whereas voltage is 3.5 V 2.5 varistors. Observation electroluminescent light EGJ interface clearly indicates related to electron-hole generation,...
Temperature rise of gas insulated switchgear (GIS) has to be limited according the demands IEC 62271 standard. Computational methods for temperature are essential during design GIS. The heat in GIS is mainly transferred by convection, as used insulating sulfur hexafluoride (SF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> ) a high cooling capacity that further increases pressurized. dimensionless Rayleigh number indicates intensity...
An understanding of the thin film growth modes substrate-induced polymorphs allows a deeper insight into origin this class materials.
The 0.5-eV (4000-${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$) emission band in InP:Fe is studied detail by Fourier-transform infrared photoluminescence (PL), time-resolved PL, and excitation (PLE) spectroscopy. We resolve new fine structures both the zero-phonon (ZP) lines corresponding phonon sideband. transient PL signal follows an exponential decay with a time constant of 1.1\ifmmode\pm\else\textpm\fi{}0.3 ms. PLE shows that can be pumped via hole capture ${\mathrm{Fe}}^{2+}$ even more...
One of the most critical tasks in development extreme ultraviolet lithography (EUVL) is accurate deposition reflective multilayer coatings for mirrors comprising EUVL tool. The second set (Set 2) four imaging optics an alpha-class system has been coated successfully. All (M1, M2, M3, M4) were Mo/Si- during a single-deposition run with production- scale DC-magnetron sputtering system. Ideally, should not degrade residual wavefront error design. For present camera, this requirement equivalent...
Superconducting devices operating at liquid nitrogen LN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> temperature are increasingly used in power engineering. This paper describes a method to calculate the spatial distribution of rise due high current densities electrical joints, which result excessive transient and steady state heat generation. In order compute conduction between along adjacent solid domains, thermal network using...
We report a new photoluminescence (PL) spectrum of wurzite-type GaN intentionally doped with vanadium by ion implantation. A group several broad intense near-infrared PL lines is observed at 820 meV. The whole can be up to room temperature. samples were grown low-pressure metalorganic vapor phase epitaxy on sapphire substrate. After implantation the annealed under growth conditions 920 °C.
Dihydro-tetraaza-acenes are promising candidates for future applications in organic electronics, since these molecules form crystals through an interplay between H-bonding, dipolar, and van der Waals interactions. As a result, densely packed π−π structures – favorable charge transport obtained, with exceptional stability under ambient conditions. This study investigates growth morphologies of dihydro-tetraaza-pentacene dihydro-tetraaza-heptacene on vicinal c-plane sapphire. Submonolayers...
Zinc oxide varistors are among the most important surge arresters. The current-voltage (I–V) behaviour of these devices can be approximated by a model electrical networks grain boundaries arranged in 3D space, where nonlinear resistors mimic effective boundary varistor microstructure. A simplified version network model, namely parallel circuits chains serially connected different length (path model), is derived from fully polycrystalline comparison path with complex resistor based on...
The thermal network method (TNM) is widely used for temperature rise computations due to its short computation time. This paper describes a automatically generating (TN) circuit breaker compartment of medium voltage gas insulated switchgear (MV GIS). convective and conduction heat transfer are calculated with numerical methods. resulting TN intended mimic complex 3d-models verified finite element (FE) model the computational fluid dynamics (CFD) results. (4 pages)
In this work we propose a new way of applying biaxial strain on an electrically conductive material to investigate stress-induced change properties, namely the piezotronic effect, at microscopic level. A piezoelectric stage is actuated certain compressive levels. The microsection sample attached it experiences same amount strain. external translates inner stresses in which can be controlled with high accuracy. This method was applied zinc oxide-based varistor ceramics known as functional...
Abstract We present results of electron paramagnetic resonance (EPR) and optical spectroscopy on different charge states the transition metal impurity iron in ZnTe CdTe. identify energy level position Fe + acceptor at Ev 1.7eV estimate its Ionisation transitions from to conduction valence bands ar found both absorption photo‐EPR. Optical intra‐defect tracsitions crystalfield‐split excited resolved for first time. This assignment 2+ is based optically detected EPR. Application far‐infrared...