A p-type inorganic oxide semiconductor, tin monoxide (SnO), is developed by a solution process. SnO thin-film transistors (TFTs) in the p-channel enhancement mode are fabricated spin-coating precursor followed postannealing, showing highest field-effect mobility of 0.13 cm2 V−1 s−1, threshold voltage −1.9 V, and on/off drain current ratio 85.

Field-effect mobilities are the most important figures of merit to evaluate feasibility semiconductors for thin-film transistors (TFTs). They are, however, sometimes extracted from TFTs with active semiconductor area undefined and in small channel ratios without effect fringing electric field at ends source/drain electrodes taken into account. In this letter, it is demonstrated that field-effect nanoparticulate zinc oxide (ZnO) ratio 2.5 overestimated by 418%, choice large gives real value...

Nanoparticulate zinc oxide is regarded as one of the most promising inorganic materials for printable field-effect transistors (FETs), which work in n-channel enhancement mode, due to compatibility with solution, low-temperature, and high throughput processes. Since nanoparticulate films are composed nanoparticles their agglomerates, roughness interface insulating layer, where channel FETs formed, a critical issue. Thus, influence on mobility investigated conjunction film capacitance...

A nondegenerate state originates from the lack of inversion, two-fold rotation, and reflection symmetries transforming wavevector k to − according time-reversal symmetry.

Homogeneous, smooth and densely-packed nanoparticulate ZnO films for field-effect transistors (FETs) are formed by spin-coating suspensions of nanoparticles in an organic solvent, followed baking at 150 °C. The morphology the is strongly dependent on type amount surfactant polymers that employed to cap stabilize suspensions. Infrared spectroscopy, atomic force microscopy, electron microscopy electrical characterization reveal a certain needed make size agglomerates small enough form such...

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Koshi Okamura, Horst Hahn; Carrier transport in nanocrystalline field-effect transistors: Impact of interface roughness geometrical carrier trap. Appl. Phys. Lett. 11 October 2010; 97 (15): 153114. https://doi.org/10.1063/1.3495798 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley...

Hall-effect measurements were performed in the temperature range of 10-400 K on degenerate n-type polycrystalline InAsxP1−x films deposited glass substrates by molecular-beam deposition at 240 or 320 °C. For analysis dependence electrical conductivity these films, we use a model developed our preceding paper, which is based an energy-filtering with potential fluctuations grain boundaries, but refining it so as to be applicable for non-parabolic conduction band. Using refined version model,...

Abstract The time-reversal symmetry in a nonmagnetic condensed-matter system is revised to the form dependent on spatial of two-fold rotation addition conventional inversion. Bloch state within constraints and symmetries demonstrated for representative systems Si GaAs basis first-principles calculations. nondegenerate gapless topological also assessed.

Abstract Solution‐processed inorganic field‐effect transistors (FETs) are mostly composed of nanocrystalline semiconductors as active layers. Since carriers induced at the interface between semiconductor and dielectric, roughness has a significant influence on performance FETs. The is, however, buried in layer cannot be accessed from surface; no quantitative probing methods available so far. In this article, it is proposed to apply capacitance–voltage ( C – V ) measurements nanoparticulate...

Channel voltages of ZnO thin-film transistors during operation are precisely probed at two trisecting positions between the source and drain electrode, which exactly corresponds to characteristic transistor events, such as carrier injection, accumulation, pinch-off formation, current saturation. Furthermore, a simple numerical calculation based on gradual channel approximation continuity equation reveals that have non-linear potential distribution an intrinsic but significant drop in region...

The quasiparticle energies in a single-shot GW approximation are presented with the focus on overlap density of wavefunctions. Group theory is employed to classify wavefunctions into irreducible representations and assess density. theoretical inspection assures that energy depends primarily spatially overlapped symmetrically compatible numerical indicates relies largely all-electron not only occupied bands but also high-energy unoccupied bands. These demonstrated for SrTiO3 ascertained...

Metal-semiconductor hybrid thin films consisting of an amorphous oxide semiconductor and a number aluminum dots in different diameters arrangements are formed by electron beam lithography employed for thin-film transistors (TFTs). Experimental computational demonstrations systematically reveal that the field-effect mobility TFTs enhances but levels off as dot density increases, which originates from variations effective channel length strongly depends on electric field distribution...

Spin-dependent electron-radiation interaction is derived from the Foldy-Wouthuysen transformations of Dirac equation. A spin magnetic moment term identified both with spin-preserving and spin-flipping transitions inspected for atoms condensed matter specifically GaAs on basis first-principles calculation. The connections to relaxation spin-resolved photoemission are also presented.

The adsorption of naphthalene on a Si(100)-2×1 surface at room temperature was investigated using infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry (MIR). To determine configurations detail, IRAS spectra C-H stretching vibration region were analyzed comparison with calculations based density functional theory. As result, it found that adsorbs different manners depending coverage molecules. At low coverage, single configuration is favored, which 1, 4, 6, 9...