A5060897739- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Ga2O3 and related materials
- Advanced Photocatalysis Techniques
- Metal and Thin Film Mechanics
- Advanced ceramic materials synthesis
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Thin-Film Transistor Technologies
- Acoustic Wave Resonator Technologies
- Aluminum Alloys Composites Properties
- Graphene research and applications
- Advanced Surface Polishing Techniques
- Nanowire Synthesis and Applications
- Engineering Applied Research
- Plasma Diagnostics and Applications
- Silicon and Solar Cell Technologies
- Electronic and Structural Properties of Oxides
- Wind Energy Research and Development
- Boron and Carbon Nanomaterials Research
- Manufacturing Process and Optimization
- Aerodynamics and Fluid Dynamics Research
- Radiative Heat Transfer Studies
- Perovskite Materials and Applications
Korea Institute of Ceramic Engineering and Technology
2018-2024
Pukyong National University
2024
International University of Korea
2018-2021
Government of the Republic of Korea
2021
Nagoya University
2014-2019
Pusan National University
2019
Gwangju Institute of Science and Technology
2009-2014
Gwangju University
2014
Korea Maritime and Ocean University
2010
In this paper, we demonstrate a scalable process for the precise position-controlled selective growth of GaN nanowire arrays by metalorganic chemical vapor deposition (MOCVD) using pulsed-mode technique.
We report on the thorough investigation of light emitting diodes (LEDs) made core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) in outer shell, which are grown patterned substrates by metal-organic vapor phase epitaxy. The multi-bands emission LEDs covers nearly whole visible region, including UV, blue, green, and orange ranges. intensity each is strongly dependent current density, however demonstrate a rather low color saturation. Based transmission electron microscopy data...
Abstract Gallium oxide (Ga2O3), a wide bandgap semiconductor of the fourth generation, shows great potential for advanced optoelectronic applications. While β-Ga2O3-based photodetectors (PDs) have been extensively studied, research on α-Ga2O3-based PDs remains scarce. This work investigates structural, electronic, and performance characteristics metal-semiconductor-metal (MSM) PDs. Using first-principles calculations within GGA+U framework, it was found that Al(111) Ni(111) electrodes...
A challenging approach, but one providing a key solution to material growth, remote epitaxy (RE)—a novel concept related van der Waals (vdWE)—requires the stability of two-dimensional (2-D) material.
Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional scale-down high voltage power devices deep ultraviolet optoelectronics at fraction the bulk-device cost. Here, we report on large-area β-Ga2O3 nanomembrane spontaneous-exfoliation (1 cm × 1 cm) from layers compressive-strained epitaxial (EG) grown SiC,...
Precisely controlled morphology of GaN nanorods was obtained on a thin AlN seed layer and their height increased as the diameter mask openings decreased.
We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed high quality GaN nanorods position dependence structural properties MQWs on multiple facets. The excitation temperature dependences...
The effectiveness of rear-flow-controlled mist chemical vapor deposition (mist CVD) for the growth 2-inch α-Ga2O3 epilayers was studied. numerical simulation indicated that low velocity flow is appropriate inducing an upward on front without a vortex. Under 0.08 m/s, were successfully grown c-plane sapphire substrates. high-quality with full widths at half maximum 42 arcsec and 1993 (0006) (104) plane reflections, respectively. CVD demonstrated to be effective long-time growth. thickness...
Abstract It is hypothesized that gravity‐driven sedimentation and gliding of water microdroplets on a substrate surface due to the Leidenfrost effect explain deposition behaviors epilayers via mist chemical vapor (mist CVD). The rate, thickness uniformity, morphology are dependent velocity, incident angle, probability, distance, lifetime droplets substrate. Practically, corundum structured gallium oxide (α‐Ga 2 O 3 ) tilted 2‐inch c ‐plane sapphire validated hypothesis. A high tilt angle low...
We demonstrate a cost-effective top-down approach for fabricating InGaN/GaN nanorod arrays using wet treatment process in KOH solution. The average diameter of the as-etched nanorods was effectively reduced from 420 nm to 180 nm. spatial strain distribution then investigated by measuring high-resolution cathodoluminescence directly on top nanorods. smaller showed higher internal quantum efficiency and lower potential fluctuation, which can subsequently be exploited high-efficiency photonic devices.
Abstract Two-step growth of κ -Ga 2 O 3 thin films on 4H-SiC substrates was attempted with temperature-varied buffer layers via mist chemical vapor deposition. The first-step Ga affect the phase formation and grain size variation depending temperatures. In second-step thin-film growth, film grown at a fixed temperature 500 °C regardless various layers. Three zones, namely, amorphous, phase, mixed were categorized in according to temperature. High-quality smooth could be achieved through...
Double buffer layers composed of (Al
We investigated the photovoltaic performance of InGaN/GaN multiple quantum well (MQW) solar cells by comparing vertical-type and conventional lateral-type cells. found that both bottom reflector front surface texturing MQW enhanced light absorption 45%, leading to an enhancement short circuit current density ( J SC ) 1.6 times, compared a structure. For cell, Ag was used for reflectors pyramid textured surfaces were formed KOH etching after lift-off process, whereas structures fabricated on...
Pristine graphene and a interlayer inserted between indium tin oxide (ITO) p-GaN have been analyzed compared with ITO, which is typical current spreading layer in lateral GaN LEDs. Beyond certain injection, the pristine (CSL) malfunctioned due to Joule heat that originated from high sheet resistance low work function of CSL. However, by combining ITO improve resistance, it was found be possible solve malfunctioning phenomenon. Moreover, light output power an LED stronger than using or We...
We fabricated selectively grown Ga-polar GaN nanorods by optimizing metal organic vapor phase epitaxy (MOVPE) growth parameters using continuous- and pulsed-mode approaches. Nucleation layers were continuous mode with H2 or N2 as carrier gas, which resulted in pyramidal hexagonal shapes, respectively. The mechanism of was further studied for the nucleation layer case, shape observed to be flattened during initial step then evolved into Ga clustering on top c-plane.
We report on the fabrication of highly integrated semipolar {101} GaN micro-pyramid light-emitting diode (LED) arrays a c-plane sapphire substrate obtained via confined selective area growth (SAG). The cathodoluminescence (CL) revealed that were under severe local strain and potential fluctuations observed depending location pyramid facets. emissive region in facets was also found to be different monochromatically captured CL images. Furthermore, electroluminescence (EL) LED had palpable...
Based on the verified multiphysics simulation, a model describing C transport contributing to crystal growth was suggested. further understanding of transport, rate enhanced by adopting flow modifier in melt.