A5101773219- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Blind Source Separation Techniques
- Ga2O3 and related materials
- Natural Fiber Reinforced Composites
- Advanced Photocatalysis Techniques
- Advanced Algorithms and Applications
- Caching and Content Delivery
- Semiconductor materials and devices
- Covalent Organic Framework Applications
- Semiconductor Quantum Structures and Devices
- Radio Frequency Integrated Circuit Design
- biodegradable polymer synthesis and properties
- Advanced Cellulose Research Studies
- Speech and Audio Processing
Yangzhou University
2023-2024
Chinese Academy of Sciences
2018-2021
Institute of Information Engineering
2021
University of Chinese Academy of Sciences
2019-2021
Institute of Microelectronics
2018-2019
High-performance AlGaN/GaN-on-Si diodes are fabricated with lateral Schottky barrier controlled rectifier (LSBS) on thin-barrier (5nm) AlGaN/GaN heterostructures, which features a recess-free process, enabling better electrostatic control to pinch off the channel under anode region. In this way, low leakage currents (3-orders of magnitude lower than conventional recessed Schottky-barrier-diode (SBD)) and high reverse breakdown voltage 1700 V (@10μA/mm) reached, together onset only 0.37...
Monolithically integrated enhancement/depletion-mode (E/D-mode) GaN-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) and inverters, were fabricated on an ultrathin-barrier (UTB) AlGaN/GaN heterostructure grown Si substrates. By employing a graded AlGaN back barrier in the UTB-AlGaN/GaN heterostructure, high threshold voltage (VTH) of +3.3 V is achieved E-mode MIS-HEMTs. The MIS-HEMT inverter features logic swing 7.76 at supply 8 V, small VTH—hysteresis as...
Architecting hierarchical structures in monolithic covalent organic frameworks (COFs) is vital for the applications of COFs mass transport fields. The MXene-coated bilayer aerogels containing β-keto-enamine COF (MX-TpX-COF) with different chain lengths aromatic linkers are constructed study. directional freezing method endowed part and MXene coating aligned channels, small pores mainly exist former, while larger ones latter. occurrence multi-level inside bulks, together locally ordered...
Effects of fluorine plasma etching on Au-free ohmic contacts to SiNx-passivated ultrathin-barrier AlGaN/GaN heterostructure were investigated. It is found that overetching SiNx passivation layer, which was grown by low-pressure chemical vapor deposition (LPCVD), resulted in strong accumulation at the junction between metal, passivation, and (Al)GaN barrier layer. The possible depletion effect will cutoff current conduction path metal 2-D electron gas (2DEG) access region, leading degraded...
Aiming at the problem of identification a large number radio stations in high frequency (HF) band, fast method based on sparse component analysis, which high-speed spectrum scanning data are used to separate and identify multiple each channel, is proposed. Taking into account adverse effects shortwave time-varying channel fading signals, utilizing periodicity analysis algorithm time feature clustering (TFC-SCA) The combines features with amplitude for realizes accurate estimation mixing...