Antonios Michail

ORCID: 0000-0002-8428-6602
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About
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Research Areas
  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Graphene research and applications
  • Perovskite Materials and Applications
  • Carbon Nanotubes in Composites
  • Thermal properties of materials
  • Global Trade and Competitiveness
  • Maritime Ports and Logistics
  • Plasmonic and Surface Plasmon Research
  • Organic and Molecular Conductors Research
  • Ichthyology and Marine Biology
  • GaN-based semiconductor devices and materials
  • Wireless Power Transfer Systems
  • Advanced biosensing and bioanalysis techniques
  • Gold and Silver Nanoparticles Synthesis and Applications
  • Advanced Fiber Optic Sensors
  • Advanced Sensor and Energy Harvesting Materials

University of Patras
2016-2024

Foundation for Research and Technology Hellas
2018-2024

FORTH Institute of Chemical Engineering Sciences
2016-2024

Van der Waals single-layer materials are characterized by an inherent extremely low bending rigidity and therefore prone to nanoscale structural modifications due substrate interactions. Such interactions can induce excess charge concentration, conformational ripples, residual mechanical strain. In this work, we employed spatially resolved Raman photoluminescence (PL) images investigate strain doping inhomogeneities in a single layer exfoliated molybdenum disulphide crystal. We have found...

10.1063/1.4948357 article EN Applied Physics Letters 2016-04-25

Two-dimensional materials such as graphene and molybdenum disulfide are often subject to out-of-plane deformation, but its influence on electronic nanomechanical properties remains poorly understood. These physical distortions modulate important which can be studied by atomic force microscopy Raman spectroscopic mapping. Herein, we have identified investigated different geometries of line defects in standing collapsed wrinkles, folded grain boundaries that exhibit distinct strain doping. In...

10.1021/acsnano.0c06701 article EN ACS Nano 2021-01-25

Strain engineering can modulate the properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory experiments have found that uniaxial tensile strain improve electron mobility monolayer MoS

10.1021/acsnano.3c08996 article EN ACS Nano 2024-06-26

Chemical vapor deposited WS2 monolayers are subjected for the first time to controlled pure biaxial tensile strain up 0.7%. From photoluminescence (PL) spectroscopy, trion and neutral exciton deformation potentials found be similar, approximately −130 meV/%. It is shown that excess carrier concentration as well residual in samples can determined from PL spectra. The experimental Grüneisen parameter of in-plane E′ Raman mode 1L-WS2 equal corresponding (E2g) bulk WS2. impact mechanical on...

10.1021/acs.jpcc.2c06933 article EN The Journal of Physical Chemistry C 2023-02-14

Abstract Single- and bi-layer MoS 2 are two-dimensional semiconductors able to withstand very large deformations before failure, standing out as suitable templates for strain engineering applications flexible electronics. It is imperative, the proper integration of this material in practical applications, that relationship between property well understood. Two dimensional crystals fabricated by chemical vapor deposition or micromechanical exfoliation transferred onto substrates subjected...

10.1088/2053-1583/abc2de article EN 2D Materials 2020-10-20

A controlled and eco-friendly, scalable CVD method for the production of single few layer MoS2 crystals is proposed.The are fabricated at atmospheric pressure through reaction pre-deposited sodium molybdate (Na2MoO4) in solution elemental sulfur 800 °C, offering flexibility to achieve two growth regimes -either homogeneously distributed or continuous films-by varying Na2MoO4 concentration.In particular, low precursor concentrations, isolated with controllable mean lateral size were...

10.1088/2053-1583/aac610 article EN 2D Materials 2018-05-18

Monolayer transition metal dichalcogenides are intensely explored as active materials in 2D material-based devices due to their potential overcome device size limitations, sub-nanometric thickness, and robust mechanical properties. Considering large band gap sensitivity strain, single-layered TMDs well-suited for strain-engineered devices. While the impact of various types strain on properties a variety has been studied past, TMD-based have rarely under deformations, with uniaxial being most...

10.1021/acsami.4c07216 article EN cc-by ACS Applied Materials & Interfaces 2024-09-03

Surface-Enhanced Raman Spectroscopy (SERS) is a powerful, non-destructive technique for enhancing molecular spectra, first discovered in 1974. This study investigates the enhancement of signals from single- and few-layer molybdenum disulfide (MoS2) when interacting with silver nanoparticles. We synthesized MoS2 membrane primarily consisting monolayers bilayers through wet chemical vapor deposition method using metal salts. The nanoparticles were either directly grown on or placed beneath it....

10.3390/ma17174396 article EN Materials 2024-09-06

We demonstrate a crystallographic configurational transformation from rhombohedral (ABC) to Bernal (ABA) stacking by exposing large area exfoliated trilayer graphene (3LG) nitric acid vapors and effectively introduce an approach induce motion between adjacent stackings. employ Raman spectroscopy, which is sensitive interlayer distortion of 3LG, qualitatively study the transformation. have found that after 2 h exposure (doping), ABC domains transformed completely ABA ones, while linear maps...

10.1021/acsanm.0c02400 article EN ACS Applied Nano Materials 2020-11-24

In this comprehensive study, we delve into an exhaustive examination of effective competitive strategies tailored for small to medium-sized enterprises (SMEs). The principal objective research centers on scrutinizing the strategic orientation UK Manufacturing SMEs. Conducting extensive literature review, critically evaluated Porter's framework and identified several gaps in its applicability. Notably, critiques assert that model inadequately captures intricate nature behavior within real...

10.5296/bms.v15i1.21667 article EN cc-by Business Management and Strategy 2024-03-10

Two-dimensional (2D) graphene and graphene-related materials (GRMs) show great promise for future electronic devices. Nevertheless, GRMs result distinct properties under the influence of substrate that serves as support through uneven compression/ elongation surface atoms. Strain in GRM monolayers is most common feature alters interatomic distances, band structure, providing a new degree freedom allows regulation their introducing field straintronics. Having an all-optical detection,...

10.48550/arxiv.2403.19465 preprint EN arXiv (Cornell University) 2024-03-28

Abstract Two-dimensional (2D) graphene and graphene-related materials (GRMs) show great promise for future electronic devices. GRMs exhibit distinct properties under the influence of substrate that serves as support through uneven compression/ elongation surface atoms. Strain in GRM monolayers is most common feature alters interatomic distances band structure, providing a new degree freedom allows regulation their introducing field straintronics. Having an all-optical minimally invasive...

10.1038/s41598-024-66065-2 article EN cc-by Scientific Reports 2024-07-02

Nanoscale-engineered surfaces induce regulated strain in atomic layers of 2D materials that could be useful for unprecedented photonics applications and storing processing quantum information. Nevertheless, these strained structures need to investigated extensively. Here, we present texture-induced distribution single-layer WS2 (1L-WS2) transferred over Si/SiO2 (285 nm) substrate. The detailed nanoscale landscapes their optical detection are carried out through Atomic Force Microscopy,...

10.3390/nano14171437 article EN cc-by Nanomaterials 2024-09-03

Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory experiments have found that uniaxial tensile strain improve electron mobility monolayer MoS$_2$, a 2D semiconductor, but effects biaxial on charge transport are not well-understood in semiconductors. Here, we use flexible substrates to probe WS$_2$ MoS$_2$ transistors. This approach experimentally achieves ~2x higher on-state current...

10.48550/arxiv.2309.10939 preprint EN other-oa arXiv (Cornell University) 2023-01-01

We perform micro-photoluminescence and Raman experiments to examine the impact of biaxial tensile strain on optical properties WS2 monolayers. A strong shift order −130 meV per % is observed in neutral exciton emission at room temperature. Under near-resonant excitation, we measure a monotonic decrease circular polarization degree under applied strain. experimentally separate effect strain-induced energy detuning evaluate pure coming from The analysis shows that suppression related an...

10.1063/5.0167724 article EN Applied Physics Letters 2023-11-27

We employed conventional and time-resolved Raman spectroscopy to study the effects of electron-phonon phonon-phonon interactions on linewidth G phonon in both unintentionally intentionally doped polycrystalline chemical vapor deposited (CVD) graphene samples. directly measured lifetime, observing a ≈14% decrease with doping up 𝐸𝐹=270𝑚𝑒𝑉. The anticipated reduction due decrement contribution deviates from first principles calculations. Unintentionally CVD samples exhibit ≈30% coupling...

10.2139/ssrn.4498806 preprint EN 2023-01-01

We perform micro-photoluminescence and Raman experiments to examine the impact of biaxial tensile strain on optical properties WS2 monolayers. A strong shift order -130 meV per % is observed in neutral exciton emission at room temperature. Under near-resonant excitation we measure a monotonic decrease circular polarization degree under applied strain. experimentally separate effect strain-induced energy detuning evaluate pure coming from The analysis shows that suppression related an...

10.48550/arxiv.2307.12663 preprint EN other-oa arXiv (Cornell University) 2023-01-01
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