A5076247445- 2D Materials and Applications
- Advanced Memory and Neural Computing
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Advanced Sensor and Energy Harvesting Materials
- Chalcogenide Semiconductor Thin Films
- Perovskite Materials and Applications
- Ferroelectric and Negative Capacitance Devices
- Transition Metal Oxide Nanomaterials
- Phase-change materials and chalcogenides
- Nanowire Synthesis and Applications
- MXene and MAX Phase Materials
- ZnO doping and properties
- Quantum Dots Synthesis And Properties
- Graphene research and applications
- Conducting polymers and applications
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Mechanical and Optical Resonators
- Advanced Thermoelectric Materials and Devices
- Gas Sensing Nanomaterials and Sensors
- Plasmonic and Surface Plasmon Research
- Advanced MEMS and NEMS Technologies
- Acoustic Wave Resonator Technologies
- Electrical and Thermal Properties of Materials
University of Freiburg
2023-2025
RWTH Aachen University
2022-2025
University of Stuttgart
2025
Stanford University
2019-2024
Microsystems (United Kingdom)
2024
Sensors (United States)
2024
AMO (Germany)
2023
ETH Zurich
2015-2018
École Polytechnique Fédérale de Lausanne
2015-2018
Technische Universität Braunschweig
2015
Recent advances in biomaterials, thin film processing, and nanofabrication offer the opportunity to design electronics with novel unique capabilities, including high mechanical stability biodegradation, which are relevant medical implants, environmental sensors, wearable disposable devices. Combining reliable electrical performance deformation chemical degradation remains still challenging. This work reports temperature sensors whose material composition enables full biodegradation while...
Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the contact-TMD interface inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on substrates tends contaminate or...
Phase-change memory (PCM) is a promising candidate for data storage in flexible electronics, but its high switching current and power are often drawbacks. In this study, we demonstrate density of ~0.1 mega-ampere per square centimeter superlattice PCM, value that one to two orders magnitude lower than conventional PCM on or silicon substrates. This reduced enabled by heat confinement the material, assisted pore-type device thermally insulating substrate. Our devices also show multilevel...
Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve mobility silicon transistors several decades. Recently, theoretical studies have predicted that strain can also two-dimensional (2D) semiconductors, e.g., by reducing intervalley scattering or lowering effective masses. Here, we experimentally show strain-enhanced electron in monolayer MoS2 with uniaxial tensile strain, on flexible substrates. The on-state current are nearly...
Layered 2D semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on surfaces. This effect can be employed for resistive switching (RS) in devices emerging memories, selectors, neuromorphic computing. To date, all lateral molybdenum disulfide (MoS 2 )‐based volatile RS with silver (Ag) been demonstrated using exfoliated, single‐crystal MoS flakes requiring a forming step to enable RS. Herein, present multilayer grown by metal‐organic chemical...
Real-time thermal sensing on flexible substrates could enable a plethora of new applications. However, achieving fast, sub-millisecond response times even in single sensor is difficult, due to the mass and encapsulation. Here, we fabricate monolayer molybdenum disulfide (MoS2) temperature sensors arrays, which can detect changes within few microseconds, over 100× faster than thin-film metal sensors. Thermal simulations indicate sensors' time only limited by MoS2 interfaces The also have high...
We present a gas sensitive thin-film transistor (TFT) based on an amorphous Indium–Gallium–Zinc–Oxide (a-IGZO) semiconductor as the sensing layer, which is fabricated free-standing flexible polyimide foil. The photo-induced sensor response to NO2 at room temperature and cross-sensitivity humidity are investigated. combine advantages of with electronics technology demonstrate first a-IGZO TFT. Since plastic substrates prohibit use high operating temperatures, charge generation promoted help...
Flexible thin-film phototransistors based on amorphous indium-gallium-zinc-oxide semiconductor and a novel read-out scheme allow for both real time cumulative measurement of the ultraviolet light intensity. Furthermore, encapsulation in polydimethylsiloxane lamination to human skin, as well mechanical stability device is presented. As service our authors readers, this journal provides supporting information supplied by authors. Such materials are peer reviewed may be re-organized online...
Abstract Metal‐halide perovskites have emerged as promising materials for optoelectronics applications, such photovoltaics, light‐emitting diodes, and photodetectors due to their excellent photoconversion efficiencies. However, instability in aqueous solutions most organic solvents has complicated micropatterning procedures, which are needed dense device integration, example, displays or cameras. In this work, a lift‐off process based on poly(methyl methacrylate) deep ultraviolet lithography...
Abstract In the field of flexible electronics, emerging applications require biocompatible and unobtrusive devices, which can withstand different modes mechanical deformation achieve low complexity in fabrication process. Here, a mesa‐shaped elastomeric substrate, supporting thin‐film transistors (TFTs) logic circuits (inverters), is reported. High‐relief structures are designed to minimize strain experienced by fabricated directly on pillars' surface. this design configuration, devices...
The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables large switching window. Metal filament formation is frequently suggested for h-BN resistive (RS) mechanism, usually supported by highly specialized methods like conductive atomic force microscopy (C-AFM) or transmission electron (TEM). Here, we investigate of...
Abstract Semiconducting transition metal dichalcogenides (TMDC) are 2D materials, combining good charge carrier mobility, ultimate dimension down‐scalability, and low‐temperature integration. These properties make TMDCs interesting for flexible electronics, where the thermal fabrication budget is strongly substrate limited. In this perspective, an overview of state TMDC research provided by evaluating two scenarios, both with their own merit depending on target application. First,...
Although recent progress in the field of flexible electronics has allowed realization biocompatible and conformable electronics, systematic approaches which combine high bendability (<3 mm bending radius), stretchability (>3-4%), low complexity fabrication process are still missing. Here, we show a technique to induce randomly oriented customized wrinkles on surface elastomeric substrate, where Thin-Film Transistors (TFTs) circuits (inverter logic NAND gates) based amorphous-IGZO fabricated....
Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to their desirable band gaps, high absorption coefficients, and ideally dangling-bond-free surfaces. Despite potential, the majority of TMD solar cells date fabricated in a nonscalable fashion, with exfoliated materials, lack high-quality, large-area, multilayer TMDs. Here, we present scalable, thickness-tunable synthesis WSe2 films by selenizing prepatterned tungsten either...
Interfacial phase change memory (iPCM) devices have been shown to switch with significantly reduced power consumption, compared conventional phase-change devices. These iPCMs are based on a periodic structure of nanometer-sized layers chalcogenides called chalcogenide superlattice (CSL). Strong temperature increases observed within the CSL during switching procedure, questioning stability structure. In this study, we conduct detailed quantitative analysis investigate evolution and...
We report ultrathin ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\sim }4$ </tex-math></inline-formula> nm) channel indium tin oxide (ITO) transistors, comparing different precursors for atomic layer deposition (ALD) of the Al2O3 top-gate dielectric, and analyze role dielectric on transistor performance gate bias stress stability. Water-based ALD leads to very negative threshold voltage...
In this letter, a photolithographic fabrication process is used to manufacture indium-gallium-zinc-oxide thin-film transistors (TFTs) with mobilities > 10 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs directly on 80 μm thick polydimethylsiloxane (PDMS) substrate. Once the completed, PDMS detached from silicon wafer as carrier Due thermal mismatch between and PDMS, release results in reduction of area by 7.2%, which leads...
Abstract This work presents a defect charging mechanism in 5‐nm‐thick amorphous Al 2 O 3 thin‐films fabricated on plastic, which leads to multistate memory effects, and thus the realization of synaptic thin‐film transistors (TFTs) for neuromorphic applications. First, are characterized metal–insulator–metal stacks. These devices exhibit ferroelectric‐like behavior, is visible small‐signal capacitance surface charge density. Furthermore, quantum‐mechanical simulation current–voltage...
In this paper, we present a novel method to reduce the subthreshold swing (SS) of FETs below 60 mV/decade. Through modeling, directly relate trap charge movement between gate electrode and dielectric SS reduction. We experimentally investigate impact exchange Cu 5-nm-thick amorphous Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> in an InGaZnO...
Abstract Ultrathin transition metal dichalcogenide (TMD) films show great promise as absorber materials in high-specific-power (i.e., high-power-per-weight) solar cells, due to their high optical absorption, desirable band gaps, and self-passivated surfaces. However, the ultimate performance limits of TMD cells remain unknown today. Here, we establish efficiency multilayer (≥5 nm-thick) MoS 2 , MoSe WS WSe under AM 1.5 G illumination a function film thickness material quality. We use an...
In this work, we investigate the charge trapping behavior in InGaZnO4 (IGZO) thin-film transistors with amorphous Al2O3 (alumina) gate insulators. For thicknesses ≤10 nm, observe a positive generation at intrinsic defects inside Al2O3, which is initiated by quantum-mechanical tunneling of electrons from semiconductor through layer. Consequently, drain current shows counter-clockwise hysteresis. Furthermore, de-trapping resonant causes drastic subthreshold swing reduction. We report minimum...