A5091619426- 2D Materials and Applications
- MXene and MAX Phase Materials
- Graphene research and applications
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Sensor and Energy Harvesting Materials
- Nanowire Synthesis and Applications
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Covalent Organic Framework Applications
- Semiconductor materials and interfaces
- Perovskite Materials and Applications
- Luminescence Properties of Advanced Materials
- Molecular Junctions and Nanostructures
- Surface Modification and Superhydrophobicity
- Ga2O3 and related materials
- 3D IC and TSV technologies
- Electronic and Structural Properties of Oxides
- Chalcogenide Semiconductor Thin Films
AMO (Germany)
2021-2025
RWTH Aachen University
2021-2025
Abstract Semiconducting transition metal dichalcogenides (TMDC) are 2D materials, combining good charge carrier mobility, ultimate dimension down‐scalability, and low‐temperature integration. These properties make TMDCs interesting for flexible electronics, where the thermal fabrication budget is strongly substrate limited. In this perspective, an overview of state TMDC research provided by evaluating two scenarios, both with their own merit depending on target application. First,...
Abstract Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the 2D on three-dimensional surfaces is, therefore, an essential step toward reliable device integration. To this end, button shear testing proposed and demonstrated as a method evaluating with examples graphene, hexagonal boron...
Abstract Molybdenum disulfide (MoS 2 ) has great potential as a two‐dimensional semiconductor for electronic and optoelectronic application, but its high sensitivity to environmental adsorbents charge transfer from neighboring dielectrics can lead device variability instability. Aluminum oxide (Al O 3 is widely used an encapsulation layer in (opto)‐electronics, it leads detrimental n‐doping MoS . Here, this work reports scalable approach field‐effect transistors (FETs) where hexagonal boron...
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS2)-FETs, have gained significant attention for their potential ultrashort channels, thereby extending Moore's law. However, MoS2–FETs are prone to the formation of Schottky barriers at metal-MoS2 interface, resulting in high contact resistance (Rc) and, consequently, reduced transistor currents ON-state. Our study explores modification MoS2 induce conductive 1T-MoS2 interface via reverse...
A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target with high reproducibility yield is crucial step for device integration. In this work, we introduced dry-transfer approach grown by MOCVD (metal–organic chemical vapor deposition) on sapphire. Transfer silicon/silicon dioxide (Si/SiO2) performed using PMMA (poly(methyl methacrylate)) TRT (thermal release tape) as sacrificial layer carrier, respectively. Our...
Transition metal dichalcogenides (TMDCs) are a promising class of two‐dimensional (2D) materials for flexible electronic applications due to their low integration temperature, good properties, and excellent mechanical flexibility. Moreover, TMDCs offer the possibility co‐integrating both n‐ p‐type transistors on same substrate, enabling realization complementary metal‐oxide‐semiconductor (CMOS) circuits. In this study, n‐type MoS 2 field‐effect (FETs), WSe ‐FETs integrated foil substrate...
Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges remain, such as the deposition high-quality dielectrics on 2DMs and tuning 2DM doping levels. Here, we report a scalable plasma-enhanced atomic layer (PEALD) process direct nonstoichiometric aluminum oxide (AlOX) dielectric, overcoming damage issues associated conventional methods. Furthermore, control thickness...
Tungsten diselenide (WSe2) field-effect transistors (FETs) are promising for emerging electronics because of their tunable polarity, enabling complementary transistor technology, and suitability flexible through material transfer. In this work, we demonstrate p-type WSe2 FETs with absolute drain currents |ID| up to 7 μA/μm. We achieve by fabricating top-gated a combined metal contact transfer approach using grown metal–organic chemical vapor deposition on sapphire. Despite moderate crystal...
A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target with high reproducibility yield is crucial step for device integration. In this work, we have introduced dry-transfer approach grown by MOCVD (metal-organic chemical vapor deposition) on sapphire. Transfer silicon/silicon dioxide (Si/SiO$_2$) performed using PMMA (poly(methyl methacrylate)) TRT (thermal release tape) as sacrificial layer carrier, respectively....
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${_2}$)-FETs, have gained significant attention for their potential ultra-short channels, thereby extending Moore's law. However, MoS${_2}$-FETs are prone to the formation of Schottky barriers at metal-MoS${_2}$ interface, resulting in high contact resistance (R${_c}$) and, consequently, reduced transistor currents ON-state. Our study explores modification MoS${_2}$ induce conductive...
Flexible electronics have been emerging in the last years for a wide variety of applications. In this scenario, transition metal dichalcogenides (TMDCs), such as molybdenum disulfide (MOS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) and tungsten diselenide (WSe ), captured increased attention because their complementary transport properties, excellent mechanical flexibility [1]. particular, MOS has shown good electron transport,...
Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating with ohmic contacts challenging due to the high Schottky barrier that severely limits transistors' performance. Graphene-based heterostructures can be used addition or as a substitute unsuitable metals. We present lateral heterostructure made of scalable chemical vapor-deposited disulfide and graphene low contact...
Molybdenum disulfide (MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) is a widely studied two-dimensional (2D) semiconductor with high potential as channel material in field effect transistors (FET) [1]. A major challenge for MoS -based FETs low hysteresis operation [2]. Al O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> common encapsulation layer or gate dielectric, even though it causes an n-doping on -FETs after their [3],...