In the process of long-distance pressurized pipeline water transmission, in addition to problem hammer hazards that can easily occur pipeline, safety before pump also presents hidden dangers. When excessive pressure occurs whole it lead leakage or even pipe bursting. this work, we analyze head a pumping station using modeling calculations from KY PIPE software, combined with data an actual transmission project, study effect stopping hammer. The use two-phase check valves effectively solve...

This letter presents a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${K}$ </tex-math></inline-formula> -band 0.1- notation="LaTeX">$\mu \text{m}$ GaN on Si 10-W high-power amplifier (HPA) for the downlink of satellite <bold xmlns:xlink="http://www.w3.org/1999/xlink">communication</b> system. The proposed HPA uses driver-stage transistor to generate half-sinusoidal waveform that is delivered power-stage...

A scalable active compensatory sub-circuit that focuses on and improves the accuracy of GaN HEMT large signal model is proposed in this letter. Zero error between simulated measured dc <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I$</tex-math></inline-formula> – notation="LaTeX">$V$</tex-math></inline-formula> curves obtained. Combining empirical table-based models, time-consuming procedures for...

A high‐efficiency C‐band internally matched power amplifier, developed with 12 mm AlGaN/GaN high‐electron mobility transistors is described. The second‐harmonic frequency (2 f 0 ) tuning network applied to confine the impedance at 2 in safe efficiency regions. packaged amplifier achieves 71% power‐added (PAE) and 102 W output power, associated 17 dB gain. PAE believed be highest of GaN amplifiers reported date.

This paper presents the design procedure of a K-band 0.1 μm GaAs pseudomorphic high electron mobility transistors (pHEMT) monolithic microwave integrated circuit (MMIC) for satellite communication downlinks. The method focuses on selection and matching network (MN) by applying Approximate Optimal Impedance Region (AOIR) approach which is composition simple mathematical constraints. AOIR overcomes drawbacks traditional MN cannot control reflection coefficient trajectory precisely. formulates...

We present a design and realization of high efficiency C-Band (5.2 GHz–5.8 GHz) internally-matched gallium nitride (GaN) power amplifier (PA). To reduce dissipation to achieve efficiency, both input output matching networks, along with 2nd-harmonic modulation circuits, are designed accurately according the source load optimum impedances extracted by source-pull load-pull measurements. The PA realizes an excellent rf performance under pulsed condition, demonstrating maximum 52.2dBm (164 W) at...

A 5–8 GHz internally matched Gallium Nitride (GaN) power amplifier (PA) with 100 W output was realized in this letter. The theory of load line match used and extended. Power contour depicted revised by the capacitance GaN High Electron Mobility Transistor (HEMT). Impedance into −1 dB a wide frequency band due to ladder transmission matching network broadband combiner. With package size 14.5 ∗ 14.8 mm, proposed has maximum 102 45.8% associate added efficiency (PAE) at 6.5 GHz, over 85 PAE 42.8% GHz.

With the wide application of high-sensitivity broadband microwave receivers, requirement power-supply modulation ratio in receivers is greatly increased. Especially, switched mode harmonics secondary converted satellite will inevitably produce spurious emissions receiver band. Therefore, it necessary to analyze and prejudge response rejection entire link from when designing a spaceborne receiver. The systematic theoretical formula each obtained by researching influence circuit design...

An X-band inverse class-F power amplifier is realized by a 1-mm AlGaN/GaN high electron mobility transistor (HEMT). The intrinsic and parasitic components inside the transistor, especially output capacitor Cds, influence harmonic impedance heavily at X-band, so compensation design used for meeting condition of on current source plane. Experiment results show that, in continuous-wave mode, achieves 61.7% added efficiency (PAE), which 16.3% higher than class-AB same kind HEMT. To best our...

The appearance of third-generation semiconductors represented by gallium nitride (GaN) material greatly improves the output power a amplifier (PA), but efficiency PA needs to be further improved. Class-F reduces overlap drain voltage and current tuning harmonic impedance so that high is achieved. This paper begins with principle class-F PA, regards third as an independent variable, analyzes influence on fundamental, points out how vary I?V knee effect. Finally, best found mathematically. We...

In this letter, a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${K}$ </tex-math></inline-formula> -band high-efficiency power amplifier (PA) design using modified resistive-reactive hybrid continuous modes (HCMs) is presented. These can increase the real part of fundamental impedance when second harmonic impedances become resistive-reactive. This helps to reduce transformation ratio applying in...

3D SiP technology is one of key technologies for miniaturization in semiconductor technology. This paper presents a high gain and stability amplifier module based on To achieve density integration, silicon-based substrate with cavities used which the MMIC chips are integrated. Also, wideband low noise chip designed. In addition, analyzed simulated. Moreover, self-excitation problem solved. RF achieves good performance L-band (0.5-2GHz) has relative bandwidth more than 1.5 octaves. The...

This paper presents a broadband amplifier for high-speed modulators and measurement driver circuits using distributed amplifiers configuration. The flat low-frequency performance of the conventional (DAs) is limited by termination impedance. shows on-chip low frequency extension can be achieved optimizing capacitively coupled circuit impedance termination. Although has been introduced in previous studies to extend high-frequency gain, sufficient analysis not studied. Furthermore, novel...

In this paper, an efficiency improvement method in multistage power amplifier (PA) is proposed. Combined with the stage transistor operate continuous class-F and driver class-F- <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup> , power-added (PAE) of PA can be further improved. Meanwhile, a large push ratio adopted to determine size transistors at each voltage divider circuit used maintain same bias. The proposed was verified by...