A5023625993- Radio Frequency Integrated Circuit Design
- GaN-based semiconductor devices and materials
- Advanced Power Amplifier Design
- Semiconductor Quantum Structures and Devices
- Microwave Engineering and Waveguides
- Silicon Carbide Semiconductor Technologies
- Advanced DC-DC Converters
- Ga2O3 and related materials
- Full-Duplex Wireless Communications
- Energy Harvesting in Wireless Networks
- Superconducting and THz Device Technology
- Telecommunications and Broadcasting Technologies
- Wireless Communication Networks Research
- Semiconductor materials and devices
- Wireless Power Transfer Systems
- Antenna Design and Analysis
- Antenna Design and Optimization
- Millimeter-Wave Propagation and Modeling
- Acoustic Wave Resonator Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Advanced MIMO Systems Optimization
- Photonic and Optical Devices
Xidian University
2017-2025
This paper presents a new small-signal model for double-channel (DC)-high-electron-mobility transistors, developed through an analysis of the unique coupling effects between channels in devices. Unlike conventional single-channel HEMTs, where electrons only transport laterally channel, DC-HEMTs exhibit additional vertical two along material direction. effect significantly limits applicability traditional models to DC-HEMTs. Firstly, is characterized by introducing sub-model, which consists...
A high-linearity and high-gain AlGaN/GaN HEMTs with a 100-nm gate were demonstrated. The device employs transitional recessed (TRG) along the width for millimeter wave power application. gradually changing recess depth was created using dosed photoetching. Accurate etching ensured that FET-elements have continued V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ts</sub> offset in local equivalent threshold voltage (V...
Abstract The high power and linearity performance of GaN-based HEMT for X-band application was achieved using the barrier layer sandwich structure Al 0.05 GaN back barrier. AlGaN-sandwich-barrier can modulate polarization-graded field more flat transconductance profile under drain bias. Only about 7.5% current collapse (CC) occurs quiescent bias 40 V. Due to barrier, three-terminal off-state breakdown voltage (BV DS ) 260 V a very small drain-induced lowering (DIBL) 2.7 mV −1 is achieved....
This letter describes a design of 3.3–3.6-GHz GaAs heterojunction bipolar transistor (HBT) power amplifier (PA) with high linearity and temperature insensitivity for the fifth-generation (5G) new radios (NRs). By involving multi-feedback branches bias circuit, voltage at feedback node circuit can achieve dynamic self-tuning to stabilize base as amplifier's input grows current increases well. A three-stage common source structure PA in form monolithic microwave integrated (MMIC) is designed...
This letter presents a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${K}$ </tex-math></inline-formula> -band 0.1- notation="LaTeX">$\mu \text{m}$ GaN on Si 10-W high-power amplifier (HPA) for the downlink of satellite <bold xmlns:xlink="http://www.w3.org/1999/xlink">communication</b> system. The proposed HPA uses driver-stage transistor to generate half-sinusoidal waveform that is delivered power-stage...
In this paper, AlGaN/GaN high-electron mobility transistors (HEMTs) with different fin configurations are fabricated and analyzed. Through S-parameter measurements modeling of the designed devices, a detailed RF investigation on small-signal model parameters is performed under biasing conditions. Good agreements between measured simulated scattering up to 40 GHz illustrate validity accuracy model. The influence structures linearity improvement examined, can help improve frequency...
Compensating for the nonlinear distortion of power amplifiers (PAs) with load mismatch is a tricky task, especially when voltage standing wave ratio (VSWR) higher than 3. This letter proposes an augmented time-domain poly-harmonic (A-TD-PHD) model linearization PAs severe mismatch. Based on high-order extension classic (PHD) model, proposed A-TD-PHD can compensate induced by accurately. Experimental validations are carried out using 100-MHz orthogonal frequency division multiplexing (OFDM)...
This paper presents the design procedure of a K-band 0.1 μm GaAs pseudomorphic high electron mobility transistors (pHEMT) monolithic microwave integrated circuit (MMIC) for satellite communication downlinks. The method focuses on selection and matching network (MN) by applying Approximate Optimal Impedance Region (AOIR) approach which is composition simple mathematical constraints. AOIR overcomes drawbacks traditional MN cannot control reflection coefficient trajectory precisely. formulates...
Abstract With the development of microelectronics, circuit design has become more and important. In order to improve accuracy design, it is necessary model. This letter proposes an accurate method based on Angelov model Gallium Nitride (GaN) high electron mobility transistors (HEMTs). For model, fitting DC curve critically There are many parameters fit modify curve. Each parameter in a physical meaning. Some have significant influence this letter, sensitive evaluated, formulated into...
In this work, a new small-signal model (SSM), which is called the distributes intrinsic subdevice (DISDM), established for AlGaN/gallium nitride (GaN) Fin-like high-electron mobility transistors (HEMTs) according to device structure feature. Perfect agreements between measured and simulated scattering parameters (S-parameters) illustrated validity of DISDM accuracy extracted from model. Then, characteristics HEMTs are analyzed using theoretically. Different traditional model, can accurately...
ABSTRACT This paper introduces a new design method for high‐power density GaN MMIC amplifier operating in the Ku‐band. A thermal model to investigate distribution of power amplifiers is proposed achieve optimal performance terms density, chip size, and channel temperature. The temperature single device, an eight‐way parallel device combination, entire PA layout are obtained by finite element simulation. coupling effects MMICs analyzed detail. resistances extracted from simulation Ku‐band...
In this paper, an 8∼12 GHz low power and noise amplifier based on 0.15 μm GaAs pHEMT process is introduced. The two-stage composed of two common source transistor cascades. pre-stage mainly realizes minimum matching, the post-stage gain RLC negative feedback network added to effectively improve small-signal flatness. Based self-bias technology current multiplexing method, can while greatly reducing consumption. EM simulation results show that in frequency band, better than 20 dB, flatness...
In this letter, a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${K}$ </tex-math></inline-formula> -band high-efficiency power amplifier (PA) design using modified resistive-reactive hybrid continuous modes (HCMs) is presented. These can increase the real part of fundamental impedance when second harmonic impedances become resistive-reactive. This helps to reduce transformation ratio applying in...