Silicon carbide (SiC) is a wide band-gap semiconductor material with many excellent properties, showing great potential in fusion neutron detection. The radiation resistance of 4H-SiC Schottky diode detectors was studied experimentally by carefully analyzing the detectors' properties before and after deuterium-tritium irradiation total fluence 1.31 × 1014 n/cm2 7.29 at room temperature. Significant degradation has been observed irradiation: reverse current increased greatly, over three to...

It is anticipated that the rapid development of Internet Things (IoT) will improve quality human life. Nonetheless, large amounts data need to be replicated, stored, processed, and shared, posing formidable challenges communication bandwidth information security. Herein, it reported polyimide (PI) threshold‐switching memristors exhibit Gaussian conductance randomly set voltage distribution with nonideal properties create a compression encryption engine single chip. The used achieve...

In this work, the single-event burnout (SEB) mechanism of p-GaN gate AlGaN/GaN HEMTs has been studied systematically. The irradiation experiment was carried out based on Ta ions with high linear energy transfer 75.4 MeV/(mg/cm2), a standard criterion for commercial space applications. It is clearly observed that both drain current and increase during irradiation. With increasing bias, device burns eventually. Technology computer-aided design simulation used to explore possible mechanism....

In this paper, we report a facile strategy to fabricate fluorescent porous thin film on the surface of U-bent poly(methyl methacrylate) optical fiber (U-bent POF) in situ via "click" polymerization for vapor phase sensing explosives. Upon irradiation evanescent UV light transmitting within under ambient condition, (POSS-thiol cross-linking film, PTCF) is synthesized side by thiol–ene reaction vinyl-functionalized polyhedral oligomeric silsesquioxanes (POSS-V8) and alkane dithiols. When...

This paper provides a systematic study on the bulk traps and interface states in typical AlGaN/GaN Schottky structure under proton irradiation. After 3 MeV irradiation with dose of 5 × 1014 H+/cm2, positive flat band voltage shift 0.3 V is observed according to capacitance-voltage (C-V) measurements. Based this, distribution electrons across AlGaN GaN layers extracted. Associated numerical calculation, direct experimental evidences demonstrate that within layer dominate carrier removal...

A low work function metal Mo is used as a Schottky to fabricate beta-phase gallium oxide ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\beta} $</tex-math> </inline-formula> -Ga notation="LaTeX">$_{\text{2}}$</tex-math> O notation="LaTeX">$_{\text{3}}\text{)}$</tex-math> barrier diodes (SBDs) with size of 1 mm notation="LaTeX">$^{\text{2}}$</tex-math> , achieving an ultralow...

This paper reports the AlGaN/GaN/ Si δ-doped AlGaN/GaN:C HEMT device on silicon with high channel conductivity, breakdown field (E-field) strength, and low current collapse by using Si-doped AlGaN back barriers. The barrier was used to compensate for reduction of conductivity as a result carbon-doped semiinsulating GaN buffer layer. maximum drain increases from 412 720 mA/mm, peak extrinsic transconductance is improved 103 210 mS/mm. Due electric between gate along inserting layer, it can...

The effect of hydrogen on <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -gallium oxide (Ga2O3) (001) Schottky barrier diode (SBD) device has been studied in this article for the first time. It was found that electrical performance -Ga2O3 SBDs changed significantly after treatment, including turn-on voltage ( notation="LaTeX">${V}_{\text {on}}{)}$ decreased by 0.3 V...

A high combination of transconductance(g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> ), current gain cutoff frequency (f xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) and three terminal breakdown voltage was achieved using thin barrier AlGaN/GaN HEMTs TiN-based source contact ledge. The sheet resistance is effectively reduced, whereas the peak extrinsic trans-conductance improved by 24% from 334 to 415 mS/mm. with ledge...

Abstract The high power and linearity performance of GaN-based HEMT for X-band application was achieved using the barrier layer sandwich structure Al 0.05 GaN back barrier. AlGaN-sandwich-barrier can modulate polarization-graded field more flat transconductance profile under drain bias. Only about 7.5% current collapse (CC) occurs quiescent bias 40 V. Due to barrier, three-terminal off-state breakdown voltage (BV DS ) 260 V a very small drain-induced lowering (DIBL) 2.7 mV −1 is achieved....

In this paper, the impact of ohmic structure on channel-to-channel (C2C) coupling effect in InAlN/GaN double channel (DC) HEMTs is systematically analyzed and studied. For un-recessed structure, electrons upper can easily inject into bottom due to ultra-thin InAlN back barrier layer. Therefore, maximum drain current transconductance peak significantly increase. recessed reduced vertical electric field strength effectively weaken between two GaN channels. Benefiting from suppressed transport...

In this Letter, a single-event burnout (SEB) mechanism in gallium nitride (GaN) microwave monolithic integrated circuit power amplifiers with high linear energy transfer of 78.1 MeV·cm2/mg has been investigated detail. A typical SEB phenomenon was observed. With the aid photon emission measurements and scanning electron microscopy, it is found that catastrophic occurs power-stage GaN mobility transistors (HEMTs) metal–insulator–metal (MIM) capacitors, respectively. For HEMT, incident heavy...

We studied how irradiation with fast (14 MeV) and thermal (<;0.4 eV) neutrons affected the properties of GaN PIN diodes, measuring their I-V characteristics before after irradiation. Irradiation caused carrier removal effect when reverse bias was low. significantly increased reverse-bias current, possibly because damage to passivation layer, defects induced in GaN, near metal/GaN interface acting as tunneling sites. However, forward current decreased both neutron radiation radiation....

GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm

AlGaN/AlN/GaN heterojunctions were irradiated by 3 MeV protons with different fluences. Hall and C-V measurements showed that the density mobility of 2DEG for decreased after proton irradiation. The crystal quality optical properties AlGaN/GaN characterized variations micro-Raman scattering spectra, XRD photo luminescence (PL) spectra fluence. It has been obtained strain dislocation GaN AlGaN not affected injected. irradiation caused increase structural defects in HT-AlN buffer layer, which...

High performance enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) were achieved by using the TiN-based source contact ledge and two-step fluorine treatment. Due to effective reduction of resistance ledge, peak extrinsic trans-conductance improved 21.2% from 340 412 mS/mm. In addition, due enhancement back barrier treatment, three-terminal OFF-state breakdown voltage (BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

In this paper, Silvaco TCAD software is used to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on breakdown performance key parameters of devices are investigated by changing position concentration acceptor layer. The results show that with increase trap concentration, capture electrons reduce off-state leakage current, which can improve voltage devices. At same time, as increases, ionized make a additional electric field near drain edge,...

The subthreshold characteristic of gate-recessed high-electron-mobility transistors (HEMTs) using dual-gate (DG) architectures is systematically studied. recessed DG structure can effectively shift the threshold voltage (Vth) in positive direction. Different from complex function expression between Vth and AlGaN thickness (tb) single-gate (SG) device, variation with tb monotonic devices. Recessed device exhibits a low off-state leakage current ~ 3 × 10 <sup...

To explore the role of hydrogen in radiation degradation AlGaN/GaN high-electron-mobility transistors (HEMTs), performance untreated and pretreated devices is compared under exposure carbon ions. The energy ions chosen as 7.6 MeV, maximum fluence reaches 4 ×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> . By electrical character measuring, it found that positive shift threshold...

The electrical degradation in AlGaN/GaN high-electron-mobility transistors (HEMTs) is examined under irradiation with 7.6-MeV carbon (C), 20-MeV oxygen (O), and 30-MeV fluorine (F) ions situ. To characterize the radiation damage HEMTs, ionizing dose D <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i</sub> , displacement xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> number of vacancies versus chip depth devices have been calculated for...