In this paper, AlGaN/GaN Fin-HEMTs with different fin configurations are theoretically and experimentally investigated. A simple physical-based threshold voltage model for is built qualitative analysis. It shown that the of depends on width height structure. The peak value linearity transconductance current gain cutoff frequency improved by reducing length. also found sensitive to height, which can be attributed capacitance control from sidewalls.

A low work function metal Mo is used as a Schottky to fabricate beta-phase gallium oxide ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\beta} $</tex-math> </inline-formula> -Ga notation="LaTeX">$_{\text{2}}$</tex-math> O notation="LaTeX">$_{\text{3}}\text{)}$</tex-math> barrier diodes (SBDs) with size of 1 mm notation="LaTeX">$^{\text{2}}$</tex-math> , achieving an ultralow...

High-frequency enhancement-mode (E-mode) AlGaN/GaN high-electron-mobility transistors (HEMTs) with plasma oxidation technology (POT) were fabricated through plasma-enhanced chemical vapor deposition. POT enables the formation of a thin oxide layer in gate region, which decreases leakage by at least two orders magnitude compared conventional recessed HEMTs. Ultra-low was achieved device, Ioff = 9.5 × 10−7 mA/mm and high ON/OFF ratio over 109. Good suppression current collapse obtained after...

This letter reports on a novel enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) that combines nanowire channel and fluorine plasma treatment using inductively coupled (ICP). Compared with the conventional HEMTs, threshold voltage of E-mode HEMT shifts from −2.8 to +0.7 V, Schottky reverse leakage current is reduced by one order magnitude. The device exhibits superior performance drain 460 mA/mm at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...

A high combination of transconductance(g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> ), current gain cutoff frequency (f xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) and three terminal breakdown voltage was achieved using thin barrier AlGaN/GaN HEMTs TiN-based source contact ledge. The sheet resistance is effectively reduced, whereas the peak extrinsic trans-conductance improved by 24% from 334 to 415 mS/mm. with ledge...

In this letter, a linearity enhancement AlGaN/ GaN high electron mobility transistor (HEMT) with power density and efficiency has been achieved by selective-area charge implantation (SCI) for X-band application. Device-level transconductance compensation is realized an under-gate SCI technique, which greatly improves the of device. The device presents maximum drain current 1390 mA/mm peak 230 mS/mm. gate voltage swing up to 5.2 V, double conventional devices. At 12 GHz 25 exhibits added 47 %...

In this letter, AlGaN/GaN Fin-HEMTs with different nanochannel geometric parameters were fabricated and characterized. The drain current density, transconductance, on-resistance improved by reducing the length of nanochannel, which was attributed to modulation access resistance changing nanochannel. threshold voltage shifted positive direction decrease in width showed independence on With reduction gate swing increased suppressing increase source resistance, improving linearity transconductance.

The subthreshold characteristic of gate-recessed high-electron-mobility transistors (HEMTs) using dual-gate (DG) architectures is systematically studied. recessed DG structure can effectively shift the threshold voltage (Vth) in positive direction. Different from complex function expression between Vth and AlGaN thickness (tb) single-gate (SG) device, variation with tb monotonic devices. Recessed device exhibits a low off-state leakage current ~ 3 × 10 <sup...

A new simple model of threshold voltage for AlGaN/GaN nanowire channel high electron mobility transistors (NC‐HEMTs) is built in this work. Firstly, four NC‐HEMTs with different width are fabricated, and the conventional HEMT produced comparison. With decreasing, moves positively. Then, dependence concentration on studied by Silvaco simulation software. reduces. Finally, we recognize NC‐HEMT modeling, obtained. This can explain width. The depletion region formed side gate about 37 nm which...

A novel enhancement-mode (E-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) has been fabricated, by combining nanowire channel (NC) structure fabrication and N2O (or O2) plasma treatment. comparison of two NC-HEMTs with different treatments made. The NC-HEMT treatment shows an output current 610 mA/mm a peak transconductance 450 mS/mm. DIBL the is as low 2 mV/V, SS 70 mV/decade achieved. device exhibits intrinsic gain cutoff frequency fT 19 GHz maximum oscillation fmax 58 GHz.

This is the report on trap states in enhancement-mode AlGaN/GaN/AlGaN double heterostructures high electron mobility transistors by fluorine plasma treatment with different GaN channel layer thicknesses. Compared thick sample, thin one has smaller 2DEG concentration, lower mobility, saturation current, and peak transconductance, but it a higher threshold voltage of 1.2 V. Deep level transient spectroscopy measurements are used to obtain accurate capture cross section states. By frequency...

Good Ti/Al/Ni/Au ohmic contacts were achieved in AlGaN/GaN high electron mobility transistors (HEMTs) by using holes etching an region. The contact with a resistance of 0.1 Ωmm was obtained. Compared other methods which could reduce the ohmic‐contact resistance, this method has simple process steps, low cost and can obtain stable device characteristics. output characteristics transfer devices analysed. HEMTs show lower smaller knee voltage larger saturation current than conventional HEMTs.

In this work, 1-mm2 NiOx/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with Stripe and honeycomb anode p+ islands layout are compared in static characteristics, reverse recovery surge current robustness for the first time. comparison HJBS diodes, although Honeycomb have a slightly higher turn-on voltage...

In this work, three AlGaN/GaN nanowire channel high electron mobility transistors (NC‐HEMTs) with different widths have been fabricated. The temperature dependent characteristics of NC‐HEMTs are studied and compared conventional HEMT. results show that the on‐state current density weaker dependence, threshold voltage variation is lower. addition, drain‐induced barrier lowering NC‐HEMT first reported. Moreover, there two main scattering mechanisms influence transconductance NC‐HEMT, phonon...

High-voltage enhancement-mode (E-mode) gallium nitride (GaN) high electron mobility transistor (HEMT) is a superior candidate to enable higher efficiency and power density when compared with silicon devices in converter applications. However, the dynamic problem affects conduction loss of remains one major issues that must be resolved. In this study, comprehensive experimental evaluation analysis method temperature-dependent GaN HEMT circuit level proposed. A commercial E-mode (GS66508T)...

AlGaN/GaN high-electron-mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs produced in comparison. The AZO-gated show good DC characteristics Schottky rectifying characteristics, the achieve excellent transparencies. Compared HEMTs, a low saturation current, high threshold voltage, barrier height, reverse leakage current. Due to higher resistivity, exhibit current—gain cutoff frequency (fT) of 10 GHz power gain (fmax) 5...

In this paper, the enhancement-mode AlGaN/GaN HEMT combined with low damage recessed-gate etching and optimized oxygen plasma treatment was fabricated. Scanning electron microscope/energy dispersive spectrometer (SEM/EDS) method x-ray photoelectron spectroscopy (XPS) were used to confirm formation of oxides. Based on experimental results, obtained exhibited a threshold voltage 0.5 V, high peak transconductance 210 mS/mm, maximum drain current 610 mA/mm at gate bias 4 V. Meanwhile, on/off...

A p-type NiO junction termination extension (JTE) was incorporated into a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -gallium oxide (Ga2O3) Schottky barrier diode (SBD). To mitigate plasma damage on the Ga2O3 surface, pulsed laser deposition (PLD) employed for growing layer as JTE, replacing conventional radio frequency (RF) magnetron sputtering. Prior to PLD...

In order to improve the breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs), we report a feasible method low density drain (LDD) HEMT. The fluoride-based plasma treatment using CF4 gas is performed on drain-side gate edge. channel two-dimensional (2DEG) concentrations are modulated by fluoride treatment, and peak electric field at edge effectively reduced, so improved. distributions LDD-HEMTs simulated Silvaco software, reduced. Experimental results show that, compared...

The influence of thermal annealing on four kinds AlGaN/GaN high electron mobility transistors (HEMTs) with different fluorine plasma treatment power were compared and analyzed in detail. A thin fluorinated layer between the Schottky metal AlGaN barrier which produced was conformed by comparison reverse gate leakage current before after annealing. maximum saturation peak transconductance HEMTs decreased increasing annealing, they recovered partially hysteresis double sweep curves enlarged. F...

In this work, AlGaN/GaN FinFETs with different fin widths have been successfully fabricated, and the recessed-gate are fabricated for comparison. The exhibit higher transconductance value positive shift of threshold voltage. Moreover, width increasing, variations both voltage increase. Next, transfer characteristics depths simulated by Silvaco software. relationship between AlGaN layer thickness has investigated. simulation results indicate that slope variation reduces decreasing. Finally, a...

Low-density drain high-electron mobility transistors (LDD-HEMTs) with different F− plasma treatment were investigated by simulations and experiments. The LDD region was performed introducing negatively charged fluorine ions, which modified the surface field distribution on side of HEMT, enhancement breakdown voltage achieved. With increased power length, can be maximumly improved 70%, no severe reductions output current transconductance observed. To confirm temperature stability devices,...