A5035487339- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Radio Frequency Integrated Circuit Design
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- ZnO doping and properties
- Silicon Carbide Semiconductor Technologies
- Particle Accelerators and Free-Electron Lasers
- Particle accelerators and beam dynamics
- Advanced X-ray Imaging Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Power Amplifier Design
- Metal and Thin Film Mechanics
- Advanced DC-DC Converters
- Advancements in PLL and VCO Technologies
- Acoustic Wave Resonator Technologies
- Microwave Engineering and Waveguides
- Superconducting Materials and Applications
- Photocathodes and Microchannel Plates
- Advanced Battery Technologies Research
- Gyrotron and Vacuum Electronics Research
- Advanced Sensor and Control Systems
- Thin-Film Transistor Technologies
- Multilevel Inverters and Converters
- Physics of Superconductivity and Magnetism
Xidian University
2016-2025
Changchun University of Chinese Medicine
2025
Shenzhen University
2021-2025
Chinese Academy of Sciences
2013-2024
Jilin Meteorological Bureau
2024
Beijing Automotive Group (China)
2019-2024
Shanghai Advanced Research Institute
2019-2024
Chongqing Jiaotong University
2023
University of Chinese Academy of Sciences
2009-2022
University of Hong Kong
2014-2021
We have measured the Auger recombination coefficients in defect-free InGaN nanowires (NW) and InGaN/GaN dot-in-nanowire (DNW) samples grown on (001) silicon by plasma-assisted molecular beam epitaxy. The a density of ∼1 × 1011 cm−2 exhibit photoluminescence emission peak at λ ∼ 500 nm. as function excitation power been derived from dependent time-resolved measurements over wide range optical density. values C0, defined coefficient low excitation, are 6.1 10−32 4.1 10−33 cm6·s−1 NW DNW...
Wireless power delivery has been a dream technology for applications in medical science, security, radio frequency identification (RFID), and the internet of things, is usually based on induction coils and/or antenna. Here, new approach demonstrated wireless by using Maxwell's displacement current generated an electrodeless triboelectric nanogenerator (TENG) that directly harvests ambient mechanical energy. A rotary TENG fabricated contact sliding mode with segmented structure. Due to...
In this article, we report on the effective transconductance ( g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> ) and gain linearity improvement of submicrometer gate AlN-barrier-based transistors using GaN/InGaN coupling-channel structures. The fabricated AlN/GaN/InGaN high electron mobility transistor (CC-HEMT) showed flat profile, greatly reduced derivatives, constant dynamic source resistance compared with an AlN/GaN HEMT same...
In this article, the impact of graded AlGaN back barrier and Fe\C co-doping buffer structure on <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$/$ </tex-math></inline-formula> GaN high electron mobility transistors (HEMTs) is proposed systematically investigated. Due to effective suppression Fe tail in unintentionally doped (uid-GaN) layer by insertion thick layer, a large maximum drain current density...
In this letter, the AlGaN/GaN/graded-AlGaN:Si-doped/GaN double channel (GDC-SI) high electronic mobility transistors (HEMTs) with saturation current density and linearity have been reported for low voltage applications. Compared standard AlGaN/GaN/AlGaN/GaN GaN (SDC) HEMTs, GDC-SI HEMTs exhibited higher current, broader flatter transconductance profile, lower ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
In this letter, we apply an oxidation technique for p-GaN to a normally-off /AlGaN/GaN HEMT improve the threshold voltage and gate reliability. Oxygen-plasma low-temperature Oxygen post-annealing treatment (OPAT) of before deposition metal has introduced 5 nm interlayer, resulting in significant improvement breakdown voltage, from 10.4 V 20.6 V. Thanks HEMTs is increased 1.9 4.6 V, while almost same on- state resistance higher drain are obtained. Time-dependent measurement shows OPAT-HEMTs...
In this article, the superior power performance of a double-channel high-electron-mobility transistor (HEMT) operating at high drain voltage sub-6 GHz was demonstrated using heterostructure Al0.3Ga0.7N/GaN/AlxGa1-xN/GaN, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${x}$ </tex-math></inline-formula> ranging from 0.3 to 0, top-down double channel with graded barrier HEMT (DCGB-HEMT). comparison single...
The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the facets formed focused ion etching with gallium. Emission above threshold is characterized a peak at 524 nm (green) linewidth 0.7 nm. lowest measured current density 1.2 kA/cm2 278 K. slope wall plug efficiencies 0.74 W/A ∼1.1%, respectively, 1.3 kA/cm2. value T0=233 K in temperature range 260–300
High quality electron beams with flat distributions in both energy and current are critical for many accelerator-based scientific facilities such as free-electron lasers MeV ultrafast diffraction microscopes. In this Letter, we report on using corrugated structures to compensate the beam nonlinear chirp imprinted by curvature of radio-frequency field, leading a significant reduction spread. By pair orthogonal orientations, show that quadrupole wakefields, which, otherwise, increase...
In this letter, a high-performance gate-recessed AlGaN/GaN high electron mobility transistor (HEMT) fabricated by the recess-arrayed ohmic contact technology is presented. An array of square columns was etched in region, using Ti/Al/Ni/Au metal deposition and rapid annealing to fabricate lowresistance contact. By transmission line method measurement, an resistance (Rc) 0.12 Ω · mm measured, which 70% lower than that reference device. The patterned HEMT (POC HEMT) exhibits saturation current...
Benefitting from regrown Ohmic contact with a ledge structure, high performance millimeter-wave InAlN/GaN HEMT is fabricated to satisfy low voltage RF applications. Different the commonly seen fabrication process for contact, scheme proposed in this work features MBE regrowth of n+ GaN on whole wafer after formation well without masks and partial removal grown access region by self-stopping etching. The remaining barrier, serving as ledges, provides an additional current path achieve reduced...
This letter reports on a high-linearity and low-leakage current AlN/GaN/InGaN coupling-channel HEMT (CC-HEMT) utilizing the N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O oxidation treatment process. Attributed to channel coupling effect gate process, there is significant improvement in both leakage linearity figure of merit. The fabricated exhibited low off-state 1.6 nA/mm, which achieves high on/off ratio 10 <sup...
In this paper, we report a high-performance enhancement-mode GaN HEMT fabricated on high-quality ultrathin buffer, which achieved by two-step-graded (TSG) transition structure high-resistivity (HR) silicon substrate. Owing to rapid dislocation annihilation of TSG structure, the buffer exhibits low total density (TDD) 1.7×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> , could make...
High-performance thin-film transistors (TFTs) are crucial for advanced displays. The use of metal oxide (MO) as an excellent semiconductor to achieve high-mobility TFTs comes with certain challenges, such a severely negative threshold voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{th}}$</tex-math> </inline-formula> ) and instability....
In this work, we present the fabrication of a fully vertical β-Ga2O3 Schottky barrier diode with junction termination extension (JTE-SBD) utilizing p-GaN layer produced by sputtering, offering solution to absence p-Ga2O3 materials. The p-GaN/n-Ga2O3 JTE-SBD demonstrates turn-on voltage (Von) 0.8 V, specific on-resistance (Ron,sp) 6.15 mΩ·cm2, an ideality factor (n) 1.24, breakdown 3 kV, and Baliga's Figure Merit 1.46 GW/cm2. current–voltage–temperature (I–V–T) testing has confirmed...
Removal of residual linear energy chirp and intrinsic nonlinear curvature in the relativistic electron beam from radiofrequency accelerator is paramount importance for efficient lasing a high-gain free-electron laser. Recently, it was theoretically experimentally demonstrated that longitudinal wakefield excited by electrons itself corrugated structure allows precise control phase space. In this Letter, we report first utilization as linearizer operation seeded laser driven 140 MeV...
In this paper, AlGaN/GaN Fin-HEMTs with different fin configurations are theoretically and experimentally investigated. A simple physical-based threshold voltage model for is built qualitative analysis. It shown that the of depends on width height structure. The peak value linearity transconductance current gain cutoff frequency improved by reducing length. also found sensitive to height, which can be attributed capacitance control from sidewalls.
This work reports recent progress in the sub-6 GHz power performance of GaN-based HEMTs grown on high resistivity silicon substrates with passivation implanted termination (PIT) process. Thanks to mitigated electric field crowding at gate edge and suppressed negative fixed charge-induced carrier depletion, fabricated demonstrate a low leakage current, ON/OFF current ratio 10<sup>8</sup>, improved breakdown voltage associated collapse 40 V drain quiescent condition as 5.6%. S-band...
In this letter, we explore the impact of configuration parameters for Fin-like high-electron-mobility transistors (HEMTs) formed by partially etching barrier under gate on improving transconductance (Gm) and cutoff frequency ( f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) linearity. It is found that Gm profile HEMTs can be optimized choosing appropriate device parameters, including depth H...
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC pulse characteristics, for terminal applications whose operating usually in range 3 to 15 V. Device fabrication performed mature heterojunction as well strongly polarized heterojunction, make a comparison between two devices. Although it suffers relatively severe dispersion, HEMT delivers higher output density (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...