A5000618493- GaN-based semiconductor devices and materials
- Radio Frequency Integrated Circuit Design
- Ga2O3 and related materials
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Climate variability and models
- Energy Harvesting in Wireless Networks
- Wireless Power Transfer Systems
- Meteorological Phenomena and Simulations
- Oceanographic and Atmospheric Processes
- Silicon Carbide Semiconductor Technologies
- Plant biochemistry and biosynthesis
- ZnO doping and properties
- Acoustic Wave Resonator Technologies
- Innovative Energy Harvesting Technologies
- Plant Gene Expression Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Power Amplifier Design
- Arctic and Antarctic ice dynamics
- Cryospheric studies and observations
- Marine and coastal ecosystems
- Ocean Acidification Effects and Responses
- Postharvest Quality and Shelf Life Management
- Tropical and Extratropical Cyclones Research
- Industrial Technology and Control Systems
Xidian University
2021-2025
Zhejiang Gongshang University
2024-2025
Chinese Academy of Meteorological Sciences
2023-2025
Hainan University
2023
Institut Supérieur de l'Électronique et du Numérique
2012-2015
Nantong University
2014
Nantes Université
2011
Benefitting from regrown Ohmic contact with a ledge structure, high performance millimeter-wave InAlN/GaN HEMT is fabricated to satisfy low voltage RF applications. Different the commonly seen fabrication process for contact, scheme proposed in this work features MBE regrowth of n+ GaN on whole wafer after formation well without masks and partial removal grown access region by self-stopping etching. The remaining barrier, serving as ledges, provides an additional current path achieve reduced...
In this letter, we explore the impact of configuration parameters for Fin-like high-electron-mobility transistors (HEMTs) formed by partially etching barrier under gate on improving transconductance (Gm) and cutoff frequency ( f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) linearity. It is found that Gm profile HEMTs can be optimized choosing appropriate device parameters, including depth H...
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC pulse characteristics, for terminal applications whose operating usually in range 3 to 15 V. Device fabrication performed mature heterojunction as well strongly polarized heterojunction, make a comparison between two devices. Although it suffers relatively severe dispersion, HEMT delivers higher output density (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
In this work, an AlN/AlxGa1-xN/GaN graded channel HEMT (AlN. GC HEMT) with enhanced power and linearity performance has been proposed. With the adoption of a strong-polarized AlN barrier AlxGa1-xN channel, current density 1806 mA/mm transconductance (Gm) gate voltage swing (GVS-Gm) 7 V were gained. At 3.6 GHz load pull measurements drain (VDS) 8 V, AlN. exhibited maximum output (Pout) 2.2 W/mm. Two-tone intermodulation distortion measurement further revealed third-order intercept point...
Abstract. Coastal waters are impacted by a range of natural and anthropogenic factors, which superimpose on effects increasing atmospheric CO2, resulting in dynamically changing seawater carbonate chemistry. Research the influences dynamic pH/pCO2 marine ecosystems is still its infancy, although ocean acidification have been extensively studied. In present study, we manipulated culturing pH to investigate physiological performance fatty acid (FA) composition two coastal diatoms, Skeletonema...
ABSTRACT Using gridded and station‐observed precipitation datasets from the China National Meteorological Information Center, GPCC data, ERA5 reanalysis data 1980 to 2021, this paper identifies a westerly jet north of Tibetan Plateau (TP) during July–August, which differs typical East Asian is named TP (TPJ). The relationship between meridional location TPJ in associated mechanism are investigated. results show that closely related TPJ. When located farther north, more‐than‐normal occurs...
In this work, using the multiple threshold voltages (multi- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {Ths}}{)}$ </tex-math></inline-formula> coupling technology introduces an innovative approach to leverage AlGaN/GaN-based high-electron-mobility transistor (AlGaN/GaN HEMT) for high linearity millimeter-wave (mm-W) applications. As a result of optimizing etching depth recessed trench (...
In this work, high-performance millimeter-wave AlGaN/GaN structures for high-electron-mobility transistors (HEMTs) are presented using a Si-rich SiN passivation layer. The analysis of transient and x-ray photoelectron spectroscopy measurements revealed that the presence layer leads to decrease in deep-level surface traps by mitigating formation Ga–O bonds. This results suppressed current collapse from 11% 5% as well decreased knee voltage (Vknee). gain cutoff frequency maximum oscillation...
In this work, ultrathin barrier (∼6 nm) AlGaN/GaN high-electron-mobility transistors (HEMTs) with in situ SiN gate dielectric and slant-field plate (SFP) T-gates were fabricated analyzed. Since the proposed scheme of SFP effectively suppresses leakage alleviates peak electric field (E-field) around region, maximum breakdown voltage (VBK) was improved to 92 V, which is 54 V higher than that conventional device. The HEMT 60-nm SFP-T-gate exhibited fT 177 GHz fmax 393 GHz, yielding high...
AlGaN/GaN high-electron-mobility transistors (HEMTs) with Si-rich SiN/Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> bilayer passivation were studied in this article. The use of a SiN interlayer leads to improved channel transport property, current collapse, power performance, and temperature-dependent stability. Devices without exhibit an increase the gate leakage by over three...
In this work, high-efficiency InAlN/GaN high electron mobility transistor (HEMT) is fabricated by recess and oxidation process under the gate (RAO) for low-voltage RF applications. Compared with conventional HEMT on same heterojunction, RAO-HEMT exhibits a significant decrease in leakage, attributed to thin oxide layer formed around as well adjustment of location peak electric field confinement strong oxide. Due alleviated adoption <inline-formula...
This paper presents a study of rectifier prototype and diode modelization. The rectifying circuit with single Schottky HSMS-2860 at 2.45 GHz is proposed for energy harvesting applications. In such applications, the input power very low, mainly about −20 dBm. Based on an analysis matching circuit, rectifiers stub radial stubs low pass filter, or compact structure were designed by using simulation co-simulation in ADS. output DC voltages 36.2 mV conversion efficiency 1.3% measured over load...
A hybrid Schottky–ohmic drain technology for millimeter-wave (mmW) AlGaN/GaN high-electron-mobility transistors (HEMTs) is proposed. The Schottky metal extension in the ohmic region of reduces actual source–drain spacing, resulting a smaller ON-resistance and higher maximum current. Extended modulates electric-field distribution, thereby leading to an improved breakdown voltage, suppressed current collapse, high reliability. Compared with drain, gain cutoff frequency ( <inline-formula...
In this work, high performance InAlN/GaN HEMT based on the n+GaN regrown ohmic contact with ledge structure is proposed. The of formed by MBE regrowth and selfstopping etching, which makes total resistance between 2DEG channel metal decrease to 0.12 Ωmm forms structure. Owing InAlN barrier, increasing drain-source voltage (VDS), an additional current path comes into being barrier channel, can "shorten" device effective drainsource distance, thus further reducing parasitic resistance....
In this work, high-efficiency millimeter-wave enhancement-mode (E-mode) Fin-high electron mobility transistor (HEMT) is fabricated to satisfy low-voltage terminal applications, whose fabrication process performed on the in situ SiN passivated ultrathin-barrier AlGaN/GaN heterojunction and features N <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> O plasma oxidation...
Abstract This study investigates the interannual variability of summer precipitation over Central Asia and explores its precursory signals through soil moisture (SM) sea surface temperature (SST) anomalies. The results reveal that southern (SCA) is a crucial SM‐precipitation coupling region where significantly linked to preceding April SM in Turan Plain, between Caspian Sea Tibetan Plateau. Plain (TPSM) anomaly can reflect ensuing anomalies SCA due persistence SM. higher TPSM stimulate...
In this study, AlGaN/GaN Fin-HEMTs with different nanochannel geometric parameters were fabricated and comprehensively characterized. the arcuate Fin-HEMTs, where sidewalls from source to drain side, enhancements in current density transconductance observed. By extracting analyzing obtained small-signal measurements conducting an analysis of gate capacitance, it was demonstrated that enhancement can be attributed modulation capacitance. This enhances control capability over channel carriers,...
Abstract. Coastal waters are impacted by a range of natural and anthropogenic factors, which superimpose on effects increasing atmospheric CO2, resulting in dynamically changing seawater carbonate chemistry. Research influences dynamic pH/pCO2 marine ecosystem is still its infancy, although ocean acidification have been extensively studied. In the present study, we manipulated culturing to investigate physiological performance fatty acid (FA) composition two coastal diatoms Skeletonema...
An effective method is proposed to design a matching circuit for microwave rectifier in order manage the frequency bandwidth and power bandwidth. Although input impedance affected by nonlinear behavior of diodes with variation levels, analysis on variety configuration brings more evidence improve performance rectifiers. This has been applied low cost, zero-bias Schottky diode having RF-DC conversion efficiency 55 %. The simulation an analytic description multiple dimensional parameters are...