A5015514139- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Silicon Carbide Semiconductor Technologies
- ZnO doping and properties
- Acoustic Wave Resonator Technologies
- Advanced Power Amplifier Design
- Neural Networks and Reservoir Computing
- Semiconductor materials and interfaces
- Metal and Thin Film Mechanics
- Advancements in PLL and VCO Technologies
- Drug Transport and Resistance Mechanisms
- Metamaterials and Metasurfaces Applications
- Analog and Mixed-Signal Circuit Design
- Advanced MEMS and NEMS Technologies
- Orbital Angular Momentum in Optics
- Ion Transport and Channel Regulation
- Liver Disease Diagnosis and Treatment
Zunyi Medical University
2024
Xidian University
2021-2023
Benefitting from regrown Ohmic contact with a ledge structure, high performance millimeter-wave InAlN/GaN HEMT is fabricated to satisfy low voltage RF applications. Different the commonly seen fabrication process for contact, scheme proposed in this work features MBE regrowth of n+ GaN on whole wafer after formation well without masks and partial removal grown access region by self-stopping etching. The remaining barrier, serving as ledges, provides an additional current path achieve reduced...
In this letter, we explore the impact of configuration parameters for Fin-like high-electron-mobility transistors (HEMTs) formed by partially etching barrier under gate on improving transconductance (Gm) and cutoff frequency ( f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) linearity. It is found that Gm profile HEMTs can be optimized choosing appropriate device parameters, including depth H...
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC pulse characteristics, for terminal applications whose operating usually in range 3 to 15 V. Device fabrication performed mature heterojunction as well strongly polarized heterojunction, make a comparison between two devices. Although it suffers relatively severe dispersion, HEMT delivers higher output density (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
In this work, high-performance millimeter-wave AlGaN/GaN structures for high-electron-mobility transistors (HEMTs) are presented using a Si-rich SiN passivation layer. The analysis of transient and x-ray photoelectron spectroscopy measurements revealed that the presence layer leads to decrease in deep-level surface traps by mitigating formation Ga–O bonds. This results suppressed current collapse from 11% 5% as well decreased knee voltage (Vknee). gain cutoff frequency maximum oscillation...
In this work, ultrathin barrier (∼6 nm) AlGaN/GaN high-electron-mobility transistors (HEMTs) with in situ SiN gate dielectric and slant-field plate (SFP) T-gates were fabricated analyzed. Since the proposed scheme of SFP effectively suppresses leakage alleviates peak electric field (E-field) around region, maximum breakdown voltage (VBK) was improved to 92 V, which is 54 V higher than that conventional device. The HEMT 60-nm SFP-T-gate exhibited fT 177 GHz fmax 393 GHz, yielding high...
AlGaN/GaN high-electron-mobility transistors (HEMTs) with Si-rich SiN/Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> bilayer passivation were studied in this article. The use of a SiN interlayer leads to improved channel transport property, current collapse, power performance, and temperature-dependent stability. Devices without exhibit an increase the gate leakage by over three...
In this work, high-efficiency InAlN/GaN high electron mobility transistor (HEMT) is fabricated by recess and oxidation process under the gate (RAO) for low-voltage RF applications. Compared with conventional HEMT on same heterojunction, RAO-HEMT exhibits a significant decrease in leakage, attributed to thin oxide layer formed around as well adjustment of location peak electric field confinement strong oxide. Due alleviated adoption <inline-formula...
Low-damage plasma oxidation treatment for AlN/GaN high-electron-mobility transistors (HEMTs) was developed in this letter, with which high-performance enhancement-mode (E-mode) AlON/AlN/GaN HEMTs were demonstrated. After removal of situ SiN cap layer within gate area, remote (RPO) 4.9nm AlN barrier at 300 °C leads to formation AlON insulator and effective depletion 2-D electron gas channel, without etch-induced damage or serious interfacial issues compared the commonly used gate- recess...
A hybrid Schottky–ohmic drain technology for millimeter-wave (mmW) AlGaN/GaN high-electron-mobility transistors (HEMTs) is proposed. The Schottky metal extension in the ohmic region of reduces actual source–drain spacing, resulting a smaller ON-resistance and higher maximum current. Extended modulates electric-field distribution, thereby leading to an improved breakdown voltage, suppressed current collapse, high reliability. Compared with drain, gain cutoff frequency ( <inline-formula...
In this work, high performance InAlN/GaN HEMT based on the n+GaN regrown ohmic contact with ledge structure is proposed. The of formed by MBE regrowth and selfstopping etching, which makes total resistance between 2DEG channel metal decrease to 0.12 Ωmm forms structure. Owing InAlN barrier, increasing drain-source voltage (VDS), an additional current path comes into being barrier channel, can "shorten" device effective drainsource distance, thus further reducing parasitic resistance....
In this work, high-efficiency millimeter-wave enhancement-mode (E-mode) Fin-high electron mobility transistor (HEMT) is fabricated to satisfy low-voltage terminal applications, whose fabrication process performed on the in situ SiN passivated ultrathin-barrier AlGaN/GaN heterojunction and features N <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> O plasma oxidation...
Abstract Hepatocellular carcinoma (HCC) is one of the deadliest cancers. The prevention and therapy for this deadly disease remain a global medical challenge. In study, we investigated effect pantoprazole (PPZ) on carcinogenesis growth HCC. Both diethylnitrosamine (DEN) plus CCl4‐induced DEN high fat diet (HFD)‐induced HCC models in mice were established. Cytokines cell proliferation‐associated gene liver tissues cells analyzed. Cellular glycolysis Na + /H exchange activity measured....
Abstract Optical trapping, a cutting-edge methodology, is pivotal for contactlessly controlling and exploring microscopic objects. However, it encounters formidable challenges such as multiparticle flexible control, seamless integration. Here, we employ polarization-modulated multi-foci technique versatile nanoparticle trapping using multifunctional metasurfaces relying on geometric phase. Numerical simulations demonstrate the generation of two focused spots with orthogonal polarization...
In this work, a high linearity AlGaN/GaN HEMT integrated dual threshold coupling (DT) technology and Schottky–Ohmic drain (SOD) were fabricated analyzed. Since the architecture of DT synthesized planar- recess-HEMT periodically along gate width, SOD alleviated peak electric field (E-field) around region transconductance (Gm-max) 248 mS/mm with associated plateau ∼4.0 V at Vds = 28 was obtained, which is evidently flatter than that without structure. Attributed to improved Gm E-field, DT-SOD...
We demonstrate a novel Si-rich SiN bilayer passivation technology for AlGaN/GaN high electron mobility transistors (HEMTs) with thin-barrier to minimize surface leakage current enhance the breakdown voltage. The 20-nm and 100-nm Si 3 N 4 was deposited by plasma-enhanced chemical vapor deposition (PECVD) after removing SiO 2 pre-deposition layer. Compared traditional HEMTs, can suppress collapse ratio from 18.54% 8.40%. However, leads severer current, so that it has low layer protect of HEMTs...
We demonstrated an AlGaN/GaN high electron mobility transistor (HEMT) namely double- V th coupling HEMT (DVC-HEMT) fabricated by connecting different threshold voltage ( ) values including the slant recess element and planar in parallel along gate width with N 2 O plasma treatment on region. The comparative studies of DVC-HEMT Fin-like same wafer show significantly improved linearity transconductance G m radio frequency (RF) output signal characteristics DVC-HEMT. device shows plateau larger...
This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal--organic chemical vapor deposition (MOCVD) regrowth technique. The 150-nm regrown n + -InGaN exhibits a low sheet resistance of 31 Ω/□, resulting in an extremely contact 0.102 Ω⋅mm between and channels. Mask-free process was also used to significantly improve MOCVD contacts. Then, diffusion mechanism InAlN during investigated electrical structural characterizations, which could benefit further optimization.
We demonstrate the first Millimeter-Wave AlGaN/GaN MIS high-electron-mobility transistors (HEMTs) with Multiple T-gate technology. Thanks to oxide layer formed by N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O plasma In-situ oxidation, devices exhibit a low leakage current (10–6 mA/mm), high on/off ratio of 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> . pattern mitigates electric-field crowding at gate region TCAD...
In this paper, the influence of Fin width (WFin) on characteristics T -Gate HEMT is studied, and 3D simulation AlGaN/GaN heterojunction T-Gate carried out TCAD tool. The output, transfer transconductance devices with 500nm, 200nm, 100nm, accounts for 50% total are analyzed respectively. drain current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf> ) at Vgs=0V, Vds=6V 1030mA/mm, 1000mA/mm, 800mA/mm threshold voltages (Vth) -4.9V,...
These works report ε-Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> /m-face GaN heterojunction based high electron mobility transistors (HEMTs) adopted a T-shape structure for applications in frequency device the first time by simulation study. The very density of 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">−2</sup>...