A5028805019- Advanced Photocatalysis Techniques
- Advanced Memory and Neural Computing
- Electronic Packaging and Soldering Technologies
- Gas Sensing Nanomaterials and Sensors
- Advanced oxidation water treatment
- Ferroelectric and Negative Capacitance Devices
- Luminescence Properties of Advanced Materials
- GaN-based semiconductor devices and materials
- Gyrotron and Vacuum Electronics Research
- 3D IC and TSV technologies
- Transition Metal Oxide Nanomaterials
- Perovskite Materials and Applications
- Advanced Nanomaterials in Catalysis
- TiO2 Photocatalysis and Solar Cells
- Copper-based nanomaterials and applications
- Neuroscience and Neural Engineering
- ZnO doping and properties
- Advanced Welding Techniques Analysis
- Ga2O3 and related materials
- Radio Frequency Integrated Circuit Design
- Conducting polymers and applications
- Photoreceptor and optogenetics research
- Radiation Detection and Scintillator Technologies
- Aluminum Alloys Composites Properties
- Electrostatic Discharge in Electronics
Xidian University
2016-2025
Xi'an University of Architecture and Technology
2011-2024
China XD Group (China)
2018
South China University of Technology
2014
China Electronic Product Reliability and Environmental Test Institute
2012-2013
Hong Kong University of Science and Technology
2006-2010
University of Hong Kong
2009-2010
The worldwide popularization of white-light-emitting diode (WLED) lighting brings about chronic blue-light exposure, which has severe negative impacts on human health and circadian rhythm. hazard can be readily minimized by developing violet LED chip (λem ≈ 400 nm)-pumped sustainable human-centric WLED lighting. However, the development healthy is stringently restricted because few blue phosphors efficiently pumped chips. Herein, we report a novel Na3KMg7(PO4)6:Eu2+ phosphor with high...
Abstract Herein, Mn, Fe, and Ni single atoms are designed to be embedded into the six‐membered cavity of adjacent graphite phase carbon nitride layer, 2p orbitals interlayer N hybridized with 3d atom form Mn–N–Fe–N–Ni charge transfer bridge throughout nitride. The DFT calculations provide a clear explanation for how p–d orbital hybridization facilitate creation charge‐transfer pathway. This pathway, which is located in bridge, serve as catalyst degradation oxytetracycline hydrochloride...
Fully degradable biomimetic synaptic devices based on a W/MgO/ZnO/Mo memristor silk protein substrate show remarkable information storage and characteristics.
Abstract Transient memristors are prospective candidates for both secure memory systems and biointegrated electronics, which capable to physically disappear at a programmed time with triggered operation. However, the sneak current issue has been considerable obstacle achieve high‐density transient crossbar array of memristors. To solve this problem, it is necessary develop switch device turn on off controllably. Here, dissolvable flexible threshold switching (TS) vertically crossed structure...
A novel 1D/2D step-scheme Bi2O3/g-C3N4 was prepared using a simple reflux method. Bi2O3 photocatalysts showed lower photocatalytic activity for the degradation of tetracycline hydrochloride under visible light irradiation. After compositing with g-C3N4, enhanced obviously. The could be attributed to high separation efficiency carriers generated by photocatalyst due formation heterojunction, which inhibited recombination photogenerated electrons and holes. In order further enhance...
In this letter, physically transient and fully bioresorbable resistive switching devices based on ZnO are proposed, with excellent memory performance shown in Mg/ZnO/W Mg/ZnO/Mg devices. The utilize dissolvable metals including Mg W biodegradable silk fibroin substrates that can dissolve while immersed deionized water after 15 minutes as fast 5 phosphate-buffered saline. entire device consists of electronic materials, which have promise for secure systems, implantable medical devices,...
A novel Co/Ni-MOF-74@PDI Z-scheme heterojunction photocatalyst material was constructed by a simple solvothermal method. used to activate H 2 O under visible-light irradiation.
In this paper, we report a high-performance enhancement-mode GaN HEMT fabricated on high-quality ultrathin buffer, which achieved by two-step-graded (TSG) transition structure high-resistivity (HR) silicon substrate. Owing to rapid dislocation annihilation of TSG structure, the buffer exhibits low total density (TDD) 1.7×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> , could make...
In this letter, dissolvable and biodegradable resistive switching devices with a cell structure of Mg/MgO/Mg were demonstrated. Electrical tests demonstrated good memory characteristics for nonvolatile application. The dissolution rate Mg MgO is characterized in deionized (DI) water phosphate-buffered saline solution, clear difference, 0.36, 1.25, 0.057, 0.13 nm/s, respectively. on silk fibroin substrates are able to be completely dissolved as fast 30 min while immersed DI water. have...
Polymeric carbon nitride (PCN) is an emerging metal-free photocatalyst with high stability but plagued by low photocatalytic efficiency due to the rapid charge carrier recombination behavior.
MIL-53Fe@TiO 2 was prepared by a simple solvothermal method. In order to further enhance the degradation efficiency of , it used activate peroxymonosulfate degrade tetracycline hydrochloride.
2024年3月18日西安建筑科技大学化学与化工学院的陈蕾、冷稚华团队在《发光学报》发文, 采用高温固相法合成了NaYSiO 4:xCe 3+系列蓝色荧光粉。NaYSiO 3+荧光粉在250-360 nm 之间的宽带吸收能与紫外LED 芯片很好的匹配。上述结果说明本研究报道的NaYSiO 4:0.02Ce 3+蓝色荧光粉在紫外LED 芯片驱动的白光发光二极管照明上有着潜在应用价值。
Ball pull test has emerged to be an attractive alternative the traditional ball shear method for characterizing attachment strength of solder interconnection. Since it is a relatively new development, so far there not industrial standard regulate this testing method. This paper discusses effect IMC growth after soldering and thermal aging at 150 /spl deg/C. The balls with investigated by cold bump (CBP) tests. configuration experimental data are reported in detail. results indicate that CBP...
Nanosized MFe
In this letter, physically transient resistive memory devices based on solution-processed MgO films were demonstrated for the first time. Stable and reproducible switching performances achieved with Mg/solution-processed MgO/W devices, which have larger OFF/ON resistance ratio (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> ) than Mg/sputtered devices. Triggered failures can be by immersing in deionized water 6 min at room...
In this letter, a fully physically transient artificial synapse based on W/MgO/Mg/MgO/W memristor was realized for the first time. By embedding magnesium nanolayer in MgO switching layer, multilevel, and long-term memory with precise tuning ability obtained. addition, device shows significant synaptic functions including potentiation (LTP) depression (LTD). Besides, failure can be triggered while it immersed deionized (DI) water one minute at room temperature. The devices demonstrate great...
In this letter, fully transient artificial synapses based on magnesium oxide memristors with short-term plasticity (STP) were proposed for the first time. Typical physiological reactions related to STP including pair-pulse facilitation and depression demonstrated in such a synaptic device. Importantly, water-assisted transfer printing method was employed dissolvable arrays onto bioresorbable poly (vinyl alcohol) substrate form system, which finally disintegrated deionized water within 30...
In this article, we systematically investigated the Ta/Al/Ni/Au and Ti/Al/Ni/Au ohmic contacts, contact formation mechanism on ultrawide bandgap (UWBG) AlN barrier heterostructure without using source–drain regrowth technique. The excellent performance of Ta-based scheme was observed. transmission line model (TLM) results depicted an ultralow resistance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.08...
In this study, a novel composite material, Ni/Mn-MOF-74/CdS@Co3O4 was synthesized. This material consisted of dual p–n heterojunction, which enabled efficient separation and transfer charge carriers. Compared to single the presence heterojunction significantly enhanced overall efficiency. The improved efficiency could be attributed unique properties constituent semiconductors. Co3O4 exhibited p-type semiconductor properties, while Ni/Mn-MOF-74 CdS n-type properties. By combination these...