Short-term plasticity and long-term of bio-synapse are thought to underpin critical physiological functions in neural circuits. In this letter, we vividly emulated the short-term synaptic a single Cu/a-Si/Pt memristor. By controlling injection quantity Cu cations into a-Si layer, device showed volatile non-volatile resistive switching behaviors. Owing unique characteristics device, functions, i.e., potentiation, pair-pulse facilitation, potentiation/depression, spike-timing-dependent...

Abstract Emulating key synaptic functions in electronic devices is quite significant bioinspired applications. Artificial thin film transistors (TFT) offer a promising solution for efficient synapse simulation. Herein, artificial synapses based on indium–gallium–zinc oxide (IGZO) TFT are fabricated and the photoelectric plasticity investigated. Versatile including paired‐pulse facilitation, depression, short‐term memory to long‐term transition emulated. More importantly, these can be...

The various types of metaplasticity are fully mimicked using memristors for the first time.

Fully degradable biomimetic synaptic devices based on a W/MgO/ZnO/Mo memristor silk protein substrate show remarkable information storage and characteristics.

Resistive random access memory (RRAM) has attracted significant interest for next-generation nonvolatile applications. However, it is somehow difficult to design a high speed RRAM device with enhanced data reliability. This paper deals the improvement of durable switching in nanocrystals based (NC-RRAM) devices. The performance devices were prepared by incorporating NCs into HfOx oxide layer. As compared without (w/o) NC devices, NC-RRAM are capable execute uniform higher set 100 ns and...

Drawing inspiration from biology, neuromorphic systems are of great interest in direct interaction and efficient processing analogue signals the real world could be promising for development smart sensors. Here, we demonstrate an artificial sensory neuron consisting InGaZnO4 (IGZO4)-based optical sensor NbOx-based oscillation series, which can simultaneously sense information even beyond visible light region encode them into electrical impulses. Such vision neurons convey visual a parallel...

Bulk heterojunction (BHJ) structure based organic photovoltaics (OPVs) have recently showed great potential for achieving high power conversion efficiencies (PCEs). An ideal BHJ would feature large donor/acceptor interfacial areas efficient exciton dissociation and gradient distributions with donor acceptor concentrations near the anode cathode, respectively, charge extraction. However, random mixing of donors acceptors in often suffers severe recombination interface, resulting poor Herein,...

Abstract Solution‐processed indium‐gallium‐zinc oxide (IGZO) thin film transistors (TFTs) have become well known in recent decades for their promising commercial potential. However, the unsatisfactory performance of small‐sized IGZO TFTs is limiting applicability. To address this issue, work introduces an interface engineering method bi‐functional acid modification to regulate interfaces between electrodes and channels TFTs. This increases oxygen vacancy concentration reduces surface...

Negative-SET behavior, induced by nano-filament overgrowth phenomenon, takes major responsibility to the reset failure phenomenon in conductive bridge random access memory (CBRAM). The unexpected negative-SET behavior CBRAM devices can result serious reliability issues and has been an obstacle on way mass production. In this letter, we have proposed a back-end-of-line (BEOL) compatible TiN barrier layer improve device eliminating behavior. Thus, higher voltage be applied achieve more...

In this paper, we demonstrate a tunable Schottky diode based on amorphous indium-gallium-zinc-oxide (a-IGZO) film with high performance for rectifying circuit and bipolar one diode-one resistor (1D1R) crossbar applications. By modulating the oxygen content in a-IGZO film, device shows adjustable behavior. Under condition, displays outstanding features large rectification ratio up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> at...

Source-gated transistors (SGTs) with Schottky barriers have emerged as extraordinary candidates for constructing low-power electronics by virtue of device simplicity, high gain, and low operation voltages. In this work, we demonstrate flexible SGTs solution processed In2O3 channels Al2O3 gate dielectrics on ultrathin polymer substrates, exhibiting light area density (0.56 mg cm-2), subthreshold swing (102 mV dec-1), voltage (<2 V), fast saturation behaviors (0.2 power consumption (46.3 μW...

In this letter, we demonstrate the coexistence of Schottky diode performance and resistance switching (RS) behavior based on TiN/amorphous indium-gallium zinc oxide/Cu device. Depending reverse voltage applied to Cu electrode, device itself can be obviously switched from mode RS mode. The shows outstanding features with a large rectification ratio up 3×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> at ±1 V high forward current...

In this letter, a fully physically transient artificial synapse based on W/MgO/Mg/MgO/W memristor was realized for the first time. By embedding magnesium nanolayer in MgO switching layer, multilevel, and long-term memory with precise tuning ability obtained. addition, device shows significant synaptic functions including potentiation (LTP) depression (LTD). Besides, failure can be triggered while it immersed deionized (DI) water one minute at room temperature. The devices demonstrate great...

We present a continuous surface-potential-based compact model for molybdenum disulfide (MoS2) field effect transistors based on the multiple trapping release theory and variable-range hopping theory. also built contact resistance velocity saturation models analytical surface potential. This is verified with experimental data able to accurately predict temperature dependent behavior of MoS2 transistor. Our coded in Verilog-A, which can be implemented computer-aided design environment....

At Institute of Modern Physics, a cw 35 keV, 20 mA intense proton source and the low energy beam transport system (LEBT) have been developed for China Initiative Accelerator Driven Sub-Critical reactor system. In order to ensure high quality transmission ion from exit Radio Frequency Quadrupole (RFQ), line is used focus RFQ entrance match Twiss parameters requirements. The extracted by three-electrode extraction passes through LEBT root-mean-square emittance measured be less than 0.2 π mm...

In this article, we performed gated four-probe measurements on amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) to extract their intrinsic mobility and contact resistance as functions of gate voltage temperature. The abnormal degradation field-effect was observed in a-IGZO TFTs both at high Results showed that played a major role bias, whereas band-like transport (phonon scattering) accounts for degeneration We proposed novel method, which exposed the regions...

For the first time, in this letter, anomalous positive bias stress instability of back gated monolayer polycrystal molybdenum disulfide (MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) field-effect transistors with high-hydrogen-concentration SiO gate dielectrics is reported. It found that threshold voltage shifts exhibit a pronounced turnaround behavior from shift to negative when enlarging and time. We relate two physical...

Ion source development over the last 20 years at IMP is reviewed. For versatile purposes, several types of ion sources have been involved in research and work IMP, i.e., highly charged ECR (Electron Cyclotron Resonance) source, intense microwave or 2.45 GHz beam laser (LIS). In sources, SECRAL (Superconducting with Advanced design Lanzhou), Lanzhou all permanent magnet series made, which can cover operation frequency range 10-28 GHz. The LIS an Nd:YAG a maximum output energy 8 J ns pulse...

In this letter, we present a new velocity saturation model for molybdenum disulfide (MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) field-effect transistors (FETs) based on the surface potential. Unlike former models, in addition to modulating mobility, our adjusts upper limit of current integration its value. Moreover, expression charge density at drain under effect is provided. As an example, used simulate electrical...

The radio-frequency quadrupole (RFQ) group at Peking University has built a window-type RFQ, operating 162.5 MHz in continuous-wave (cw) mode. It is designed to accelerate 50 mA deuteron beam from keV 1 MeV with vane length of 1.809 m. cavity was fabricated two segments using 100% oxygen-free electronic (OFE) copper. Using an iterative assembly and measurement procedure for the precise alignment segments, we reduced errors within $\ifmmode\pm\else\textpm\fi{}0.05\text{ }\text{ }\mathrm{mm}$....

A transportable, compact, accelerator-based neutron source is under development at Xian Jiaotong University. An electrostatic low energy beam transport (LEBT) structure with a double Einzel-lens setup was adopted due to its short length and power consumption. It can pulsed proton the radio frequency quadrupole required current of 15 mA an 30 keV. We performed detailed optimization tracking achieve matching small emittance growth. In addition, fast chopper, steering, diagnostic devices are...

Hexagonal boron nitride (h-BN) based resistive switching device is fabricated with the multilayer h-BN film serving as an active material. The shows coexistence of forming-free and self-compliance bipolar behavior reproducible endurance long retention time. Moreover, in pulse mode analog characteristics, i.e. resistance states can be continuously tuned by successive voltage pulses. This suggests that also capable mimicking synaptic weight changes neuromorphic systems.

Superior bandgap tunability enables solution-processed halide perovskite a promising candidate for multi-junction photovoltaics (PVs). Particularly, optically coupling wide-gap by stacking with commercially available PVs such as silicon and CIGS (also known 4-terminal tandem) simplifies the technology transfer process, further advances commercialization potential of technology. However, compared matured PV materials phase-pure FAPbI3 , still suffers from huge voltage deficits. Here, authors...