A5047025182- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
- Low-power high-performance VLSI design
- VLSI and Analog Circuit Testing
- Integrated Circuits and Semiconductor Failure Analysis
- 2D Materials and Applications
- Ferroelectric and Negative Capacitance Devices
- Quantum and electron transport phenomena
- Silicon Carbide Semiconductor Technologies
- Transition Metal Oxide Nanomaterials
- Nanowire Synthesis and Applications
- Diamond and Carbon-based Materials Research
- Electronic and Structural Properties of Oxides
- Graphene research and applications
- Thin-Film Transistor Technologies
- Cervical and Thoracic Myelopathy
- Heme Oxygenase-1 and Carbon Monoxide
- Nerve Injury and Rehabilitation
- Cannabis and Cannabinoid Research
- Photoreceptor and optogenetics research
- Biopolymer Synthesis and Applications
- Protein Degradation and Inhibitors
- Heat shock proteins research
Vanderbilt University
2019-2023
Intel (United States)
2023
Institute of Microelectronics
2018-2020
Chinese Academy of Sciences
2017-2020
University of Chinese Academy of Sciences
2018
The Synergetic Innovation Center for Advanced Materials
2018
Shanghai Institute of Materia Medica
2017-2018
Nantong University
2017
Peking Union Medical College Hospital
2015
Chinese Academy of Medical Sciences & Peking Union Medical College
2015
Abstract Emulating key synaptic functions in electronic devices is quite significant bioinspired applications. Artificial thin film transistors (TFT) offer a promising solution for efficient synapse simulation. Herein, artificial synapses based on indium–gallium–zinc oxide (IGZO) TFT are fabricated and the photoelectric plasticity investigated. Versatile including paired‐pulse facilitation, depression, short‐term memory to long‐term transition emulated. More importantly, these can be...
The various types of metaplasticity are fully mimicked using memristors for the first time.
Resistive random access memory (RRAM) has attracted significant interest for next-generation nonvolatile applications. However, it is somehow difficult to design a high speed RRAM device with enhanced data reliability. This paper deals the improvement of durable switching in nanocrystals based (NC-RRAM) devices. The performance devices were prepared by incorporating NCs into HfOx oxide layer. As compared without (w/o) NC devices, NC-RRAM are capable execute uniform higher set 100 ns and...
Simultaneous blockade of more than one pathway is considered to be a promising approach overcome the low efficacy and acquired resistance cancer therapies. Thus, novel series c-Met/HDAC bifunctional inhibitors was designed synthesized by merging pharmacophores c-Met HDAC inhibitors. The most potent compound, 2m, inhibited kinase HDAC1, with IC50 values 0.71 38 nM, respectively, showed efficient antiproliferative activities against both EBC-1 HCT-116 cells greater potency reference drug...
Abstract In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate charge transport properties of entire device. However, influence on electrical 2D materials has not been sufficiently explored date. Here, we systematically quantify state contribution monolayer MoS 2 /WSe field-effect transistors, revealing that at low temperature is dominated by conduction with nonlinear behavior. The metallic are revealed...
Poly-3-hydroxybutyrate (PHB), a biopolymer of important commercial applications, is found in wide range Gram-negative and Gram-positive bacteria cyanobacteria.The present study has resulted the identification PHB luminescent marine bacteria, Vibrio harueyi, spite it being previously classified as PHB-negative.PHB granules with distinct membranes were detected by electron microscopy after fixation staining K harveyi cells malachite green.Analyses gas chromatography, nuclear magnetic...
In this letter, we demonstrate the coexistence of Schottky diode performance and resistance switching (RS) behavior based on TiN/amorphous indium-gallium zinc oxide/Cu device. Depending reverse voltage applied to Cu electrode, device itself can be obviously switched from mode RS mode. The shows outstanding features with a large rectification ratio up 3×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> at ±1 V high forward current...
We present a continuous surface-potential-based compact model for molybdenum disulfide (MoS2) field effect transistors based on the multiple trapping release theory and variable-range hopping theory. also built contact resistance velocity saturation models analytical surface potential. This is verified with experimental data able to accurately predict temperature dependent behavior of MoS2 transistor. Our coded in Verilog-A, which can be implemented computer-aided design environment....
Terrestrial neutron and alpha particle irradiation data for a 7-nm bulk FinFET technology reveal the persisting reliability threat single-event latchup (SEL) poses to advanced nodes. SEL is characterized over wide range of supply voltages temperatures this node. analyzed determine holding voltage ( V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">HOLD</sub> ) required sustain SEL, which can be as low 0.85 at elevated temperatures. Such within...
In this work, single-event upset (SEU) responses of D flip-flop (FF) designs with different threshold-voltage options in a 7-nm bulk FinFET technology are examined. Experimental data imply that (SE) cross section depends heavily on supply voltage and particle linear energy transfer (LET) values. For close-to-nominal voltages low-LET particles, the SEU response differs very little between options; however, for low high-LET experimental indicate FFs more susceptible to SEUs at higher threshold...
Current-sensing power MOSFET incorporating current sensing feature with a offers simple solution for overcurrent protection without additional elements. In this work low R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS-ON</sub> (<2 mOmega), high sense ratio (>10,000:1) trench is designed and evaluated. Critical factors affecting the ratio, including gate drive voltage, switching current, device temperature are characterized. Sense changes of...
Effects of programming/erasing (P/E) and total-ionizing dose (TID) are investigated on 2- 40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology. Significant random telegraph noise (RTN) is observed as-processed CTTs, especially for 2-fin devices. Trapped charge programed devices does not significantly affect 1/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}$...
The application of Super Junction concepts to a low voltage power MOSFET is investigated. body junction modified with the addition high energy implant, resulting in an increased breakdown voltage. Simulations are used quantify relationship between dose and voltage, predicted 35% Rds(on) reduction. This confirmed through experiment, 19% reduction reported at 75V. No change device reliability observed. approach provides simple means reduce on resistance MOSFETs.
In this letter, we present a new velocity saturation model for molybdenum disulfide (MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) field-effect transistors (FETs) based on the surface potential. Unlike former models, in addition to modulating mobility, our adjusts upper limit of current integration its value. Moreover, expression charge density at drain under effect is provided. As an example, used simulate electrical...
Single-Event Transients (SETs) are a dominant determinant of Soft-Error Rates (SER) for CMOS circuits. In this paper, effects elevated temperature and supply voltages on SET pulse widths analyzed 7-nm bulk FinFET technology alpha particle exposures. Experimental results indicate that at the node strongly depend temperature, different charge collection mechanisms, including drift diffusion, key factors affecting widths.
Since FinFET -based circuits have been proven to better stability at low supply voltages than planar transistor-based circuits, designers are expected use a wide range of for manage power requirements. Therefore, it is important investigate the soft error performance over voltages. In this work, Failure-in- Time (FIT)rates D-Flip-Flop (D-FF)designs in 16-nm and 7-nm bulk technologies characterized with alpha particle irradiations. Results show that rate increase FIT rates FF designs...
We present a simplified form of the exact solution 2-D Poisson equation fully depleted Si-SOI MESFET's by Hou and Wu (1995). The major improvement is that Fourier coefficient electric displacement at Si-SiO/sub 2/ interface given in (finite) closed form, rather than infinite series. Their analytic model for threshold-voltage can be accordingly.
Single-event (SE) performance of the guard-gate flip-flop (GG-FF) and conventional D-FF designs is evaluated at 16- 7-nm FinFET technology nodes. The heavy-ion test results show that 16-nm node, GG-FF shows better SE for low-linear energy transfer (LET) particles similar high-LET compared with design. However, than across a wide range particle LET values. This behavior due to higher number short transient (SET) pulses node. are used estimate SET as function
Thermal neutron induced soft-errors in 7nm bulk FinFET technology are characterized as a function of supply voltage this work. Results show that thermal FIT rates can be high 250% Alpha and 12% fast-neutron rates. Slope SER vs curves is shown to particle type (fast neutrons, or alpha particles) flip-flop design.
Total-ionizing-dose effects are evaluated in vertical-charge-trapping NAND devices with silicon oxynitride (SiON) and SiO2 tunneling layers. Processing splits include SiON layers without H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /D high-pressure annealing. Programmed were irradiated to 500 krad(SiO ) 10-keV X-rays annealed for 30 min. Second programming after annealing does not fully restore the original, programmed state....
In article number 1800556, Hong Wang, Ling Li and co-workers successfully emulate versatile functions of a biological synapse based on indium–gallium–zinc oxide (IGZO) thin film transistors through new design by combining photonic electric stimuli. Meanwhile, the synaptic can be mediated modulating composition ratio IGZO film. The work contributes to development neuromorphic electronics combination photonics has great prospects in optoelectronic applications.
A case of arytenoid dislocation after anterior cervical corpectomy and fusion (ACCF) is reported.To emphasize that could be a possible cause prolonged hoarseness in patients ACCF.Prolonged common postoperative complication surgeries, especially the approach. Postoperative usually associated with paresis recurrent laryngeal nerve (RLN). However, other causes such as arytenoids dislocation, which often misdiagnosed RLN palsy, should not ignored either.We reported one ACCF reviewed related...
A novel failure mechanism, operating-frequency-triggered latchup-like high-current state, has been observed at the 7-nm bulk FinFET node and is characterized in this paper. Results show that operating frequency GHz range on an IC may lead to a significant increase substrate-injection current leading events.