A5041671598- Fusion materials and technologies
- Nuclear Materials and Properties
- Ion-surface interactions and analysis
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Nuclear materials and radiation effects
- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Advancements in Battery Materials
- ZnO doping and properties
- Advanced biosensing and bioanalysis techniques
- Diamond and Carbon-based Materials Research
- Material Properties and Applications
- Thin-Film Transistor Technologies
- Supercapacitor Materials and Fabrication
- Surface Modification and Superhydrophobicity
- Quantum and electron transport phenomena
- Advanced battery technologies research
- Aerogels and thermal insulation
- Nanoplatforms for cancer theranostics
- Gold and Silver Nanoparticles Synthesis and Applications
- Ga2O3 and related materials
- Ferroelectric and Negative Capacitance Devices
- Nanowire Synthesis and Applications
Hunan Normal University
2018-2024
Hunan University
2021-2024
Northwest Normal University
2023-2024
Tianjin University of Technology
2022-2024
Wuhan University
2014-2023
Zhengzhou University
2022
The Synergetic Innovation Center for Advanced Materials
2018
Nanjing Tech University
2018
Surface-enhanced Raman spectroscopy (SERS) is a versatile and powerful spectroscopic technique for substance analysis detection. So far, the highest detection sensitivities have been realized on noble nanostructure substrates, which, however, are costly, unstable, non-biocompatible. While semiconductor substrates could in principle be used, existing realizations either resulted with low or used methods that poor technical control. Here we report general method, based ion irradiation vacuum...
Abstract Since the continuous scaling down of transistor channel length, extraordinary improvement is achieved in switching speed. However, rising leakage current degrades power consumption seriously. In this regard, reducing supply voltage might be most effective method. This requirement can fulfilled well by tunnel field‐effect transistors (TFETs), because carriers transport via a band‐to‐band tunneling manner TFETs. Relying on special mechanism, TFETs often require band structure...
In this paper, segmented edge saturation (SES) is proposed as a novel method to design high-performance tunnel FETs (TFETs) using smooth graphene nanoribbon (GNR). When the edges of GNR are saturated by different elements in its segments, energy gaps (Eg) these segments can be tuned. Therefore, tunneling and blocking effects achieved simultaneously reducing enlarging Eg specific regions. Both high on-tooff current (ION/IOFF) ratio large ION obtained. Simulation results show that IOFF SES...
The present work exhibited high therapeutic efficacy of FePt nanoparticles in combination with radiotherapy without apparent cytotoxicity, suggesting the potential as a promising nanoprobe improving outcome tumor chemoradiotherapy.
Nanochannel tungsten (W) film is a promising candidate as an alternative to bulk W for use in fusion applications. In previous work it has been shown have good radiation resistance under helium (He) irradiation. To further understand the influence of irradiation-induced displacement cascade damage on retention behaviour environment, this work, nanochannel and were pre-irradiated by 800 keV Kr2+ ions fluence 2.6 × 1015 cm−2 subsequently irradiated 40 He+ 5 1017 cm−2. The ion pre-irradiation...
The design of highly radiation-tolerant plasma-facing materials (PFMs) is great importance for fusion reactors. Our recent experiments have shown that nanochannel tungsten (W) films clearly superior radiation tolerance properties. In the present work, helium clustering and release from were studied by molecular dynamics simulations. effects temperature vacancy concentration on a cylinder investigated. results show W consists thin cylinders releases He atoms more quickly than bulk with flat...
Here we reported the fabrication of tungsten oxide (WO3-x ) nanowires by Ar+ ion irradiation WO3 thin films followed annealing in vacuum. The nanowire length increases with increasing fluence and decreasing energy. We propose that stress-driven diffusion irradiation-induced W interstitial atoms is responsible for formation nanowires. Comparing to pristine film, fabricated film shows a 106-fold enhancement electrical conductivity, resulting from high-density vacancies on oxygen sublattice....