A5022470958- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- Chalcogenide Semiconductor Thin Films
- Topological Materials and Phenomena
- Quantum and electron transport phenomena
- Semiconductor Lasers and Optical Devices
- Electronic and Structural Properties of Oxides
- Semiconductor materials and devices
- Advanced X-ray and CT Imaging
- Thermography and Photoacoustic Techniques
- Advanced Optical Sensing Technologies
- Graphene research and applications
- Infrared Target Detection Methodologies
- Quantum Dots Synthesis And Properties
- Nanowire Synthesis and Applications
- Advanced X-ray Imaging Techniques
- GaN-based semiconductor devices and materials
- Machine Learning in Materials Science
- Surface and Thin Film Phenomena
- X-ray Spectroscopy and Fluorescence Analysis
- Cold Atom Physics and Bose-Einstein Condensates
- Photonic and Optical Devices
- Calibration and Measurement Techniques
- Spectroscopy and Quantum Chemical Studies
- Lipid Membrane Structure and Behavior
CEA Grenoble
2016-2025
CEA LETI
2016-2025
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2016-2025
Institut polytechnique de Grenoble
2012-2024
Laboratoire d'Optique Appliquée
2017-2024
Université Grenoble Alpes
2009-2023
Centre National de la Recherche Scientifique
1997-2009
Université de Versailles Saint-Quentin-en-Yvelines
2009
Direction de la Recherche Technologique
2004
University of Arkansas at Fayetteville
1999-2001
Abstract InSb is a material of choice for infrared as well spintronic devices but its integration on large lattice mismatched semi-insulating III–V substrates has so far altered exceptional properties. Here, we investigate the direct growth InP(111) B with molecular beam epitaxy. Despite lack thick metamorphic buffer layer accommodation, show that quasi-continuous thin films can be grown using very high Sb/In flux ratio. The quality further studied Hall measurements large-scale to assess...
We report on the effect of rapid thermal annealing (RTA) photoluminescence (PL) properties GaNxAs1−x/GaAs structures. In particular, a blueshift PL peak energy is observed when samples. The results are examined as consequence RTA-induced nitrogen diffusion inside GaNxAs1−x material rather than out alloy, which homogenizes initial composition fluctuations. propose simple model that describes low temperature energy. This in good agreement with experimental and consistent recent studies lateral...
Langmuir−Blodgett multilayer films were prepared from N,N'-dioctadecyl rhodamine B (RB18) diluted in dioleoylphosphatidic acid (DOPA) or dipalmitoylphosphatidic (DPPA) with various mixing ratios. Surface pressure−area isotherms of monolayers the two matrices recorded. Absorption and fluorescence spectra decays samples RB18 further examined. The decay curves assemblies, determined using time-correlated single photon counting, analyzed framework several models leading to nonexponential decays:...
We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. show that a HgCdTe barrier can be used to protect HgTe from direct contact with ferromagnet, leading very high rates, inverse Edelstein lengths up $2.0\ifmmode\pm\else\textpm\fi{}0.5\text{ }\text{ }\mathrm{nm}$. The influence layer thickness on efficiency is found differ strongly what expected Hall effect systems. These measurements, associated...
We report on the influence of chemical composition (Al, Ga)As surface formation strain induced three-dimensional (3D) InAs islands. The experiments have been carried out using a molecular beam epitaxy facility combined with scanning tunneling microscope enabling in situ characterization. evolution density and morphology these islands is investigated as function Al composition. deposition, substrate temperature, annealing time effects island are studied. morphologies well that reconstructed...
We report an in situ molecular-beam epitaxy-scanning tunneling microscopy study of three-dimensional (3D) self-organized InAs islands on AlAs surfaces. The evolution the density and morphology these is investigated as a function coverage substrate temperature. It shown that 2D island already high just prior to 3D formation remains constant for structures increased. This observation contrasts with InAs/GaAs system makes possible growth very densities small quantum dots.
We report on the use of in situ scanning tunneling microscopy to study As/P exchange InP(001) surfaces by molecular beam epitaxy. Results demonstrate that process can be controlled selectively produce either quantum wires or dots. 15 nm wide self-assembled nanowires are observed, and they elongated along dimer row direction InP(001)-2×4 surface with a length over 1 μm flat top 2×4 surfaces. In addition, when annealed no arsenic overpressure, reconstruction transforms from 4×2 transform into...
The development of DB (Dual-Band) infrared detectors has been the core research and technological improvements for last ten years at CEA-LETI Sofradir: semi planar structure uses a proven standard process with robust reproducibility, leading to low-risk facilitated ramp-up production. This makes it natural choice third generation proposed by Sofradir. fabrication MCT is reaching maturity: ALTAIR 24μm-pixel pitch arrays in TV format are available, showing median NETD around 18mK operability...
Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins have led to several newly discovered effects, from spin-charge interconversion spin-orbit torques novel magnetoresistance phenomena. In particular, a puzzling has been evidenced as bilinear electric magnetic fields. Here, report the observation of (BMR) strained HgTe, prototypical TI. We show that both amplitude sign this BMR be tuned by controlling...
In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements. The ionization energies different measured both