A5073983860- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Semiconductor Lasers and Optical Devices
- Silicon Nanostructures and Photoluminescence
- Surface and Thin Film Phenomena
- GaN-based semiconductor devices and materials
Institut d'électronique de microélectronique et de nanotechnologie
2022-2025
Centre National de la Recherche Scientifique
2022-2024
École Centrale de Lille
2022-2024
Université de Lille
2022-2024
Université Polytechnique Hauts-de-France
2022-2024
Research and Technology Center of Energy
2024
Abstract InSb is a material of choice for infrared as well spintronic devices but its integration on large lattice mismatched semi-insulating III–V substrates has so far altered exceptional properties. Here, we investigate the direct growth InP(111) B with molecular beam epitaxy. Despite lack thick metamorphic buffer layer accommodation, show that quasi-continuous thin films can be grown using very high Sb/In flux ratio. The quality further studied Hall measurements large-scale to assess...
The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective area epitaxy are investigated using a process-free method involving multi-probe scanning tunneling microscope. resistance oxide-free on an InP(111)Bsubstrate and the InAs/GaSb core-shell InP(001) substrate measured collinear four-point probe arrangement in ultrahigh vacuum. They compared with two-dimensional electron gas reference samples same Van der Pauw geometry for validation. A significant...
Raman spectroscopy is well-suited for the characterization of semiconductor materials. However, due weakness signal, studies thin layers in complex environments, such as ultrahigh vacuum, are rather scarce. Here, we have designed a apparatus based on use fiber optic probe, with lens collecting backscattered light directly inserted vacuum. The solution has been tested preparation III-V surfaces, which requires recovery their atomic reconstruction. surfaces were either protected As amorphous...