M. van Soestbergen

ORCID: 0000-0002-8846-5579
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About
Contact & Profiles
Research Areas
  • Electronic Packaging and Soldering Technologies
  • 3D IC and TSV technologies
  • Semiconductor materials and devices
  • Copper Interconnects and Reliability
  • Electrostatic Discharge in Electronics
  • Integrated Circuits and Semiconductor Failure Analysis
  • High voltage insulation and dielectric phenomena
  • Membrane-based Ion Separation Techniques
  • Corrosion Behavior and Inhibition
  • Analytical Chemistry and Sensors
  • Electrostatics and Colloid Interactions
  • Fuel Cells and Related Materials
  • Material Properties and Processing
  • Electrochemical Analysis and Applications
  • Nanopore and Nanochannel Transport Studies
  • Advanced Battery Technologies Research
  • Advanced battery technologies research
  • Concrete Corrosion and Durability
  • Model Reduction and Neural Networks
  • Dielectric materials and actuators
  • Mechanical Behavior of Composites
  • Electromagnetic Simulation and Numerical Methods
  • Advanced Sensor and Energy Harvesting Materials
  • Metallurgy and Material Forming
  • Manufacturing Process and Optimization

NXP (Netherlands)
2016-2025

NXP (Germany)
2022

Materials innovation institute
2007-2014

Eindhoven University of Technology
2012-2014

Delft University of Technology
2006-2010

10.1016/j.jcis.2007.08.006 article EN Journal of Colloid and Interface Science 2007-09-17

Possible mechanisms for overlimiting current (OLC) through aqueous ion-exchange membranes (exceeding diffusion limitation) have been debated half a century. Flows consistent with electro-osmotic instability recently observed in microfluidic experiments, but the existing theory neglects chemical effects and remains to be quantitatively tested. Here, we show that charge regulation water self-ionization can lead OLC by "current-induced membrane discharge" (CIMD), even absence of fluid flow,...

10.1103/physrevlett.109.108301 article EN Physical Review Letters 2012-09-05

We present theoretical models for the time-dependent voltage of an electrochemical cell in response to a current step, including effects diffuse charge (or ``space charge'') near electrodes on Faradaic reaction kinetics. The full model is based classical Poisson-Nernst-Planck equations with generalized Frumkin-Butler-Volmer boundary conditions describe electron-transfer reactions across Stern layer at electrode surface. In practical situations, confined thin layers (DLs), which poses...

10.1103/physreve.81.021503 article EN Physical Review E 2010-02-12

10.1016/j.electacta.2009.03.073 article EN Electrochimica Acta 2009-04-08

10.1134/s1023193512060110 article EN Russian Journal of Electrochemistry 2012-06-01

Semiconductor devices are commonly encapsulated with Epoxy-based Moulding Compounds (EMC) to form an electronic package. EMC typically occupies a large volume within package, and thus, governs its thermomechanical behaviour. When exposed high temperatures (150 °C above), packages predominantly show oxidation of the outer layer EMC. Oxidized exhibits notably different material properties, resulting in modified deformation pattern thermally aged package under varying thermal loads. As grows...

10.1016/j.microrel.2024.115416 article EN cc-by Microelectronics Reliability 2024-05-13

The corrosion inhibitor cerium dibutylphosphate, Ce(dbp)3, prevents by and dbp deposition at the alkaline cathode acidic anode respectively. pH dependent Ce(dbp)3 solubility seems to play an essential role in inhibition degree. We found that scarcely dissolves water with a ̃1 mM limit between 2 9, whereas 1, we ̃3 due protonation of dbp, for >9, precipitated as Ce(OH)3. believe dissolution process is important aspect understanding its release from coatings thus inhibition. In case pressed...

10.1179/1743278212y.0000000069 article EN Corrosion Engineering Science and Technology The International Journal of Corrosion Processes and Corrosion Control 2013-01-16

Solder joint failure is one of the most common board-level modes in electronic components. It crucial for a next-generation reliability assessment method to have an in-situ health monitoring system place evaluate current state degradation. This achieved by specialized embedded sensors and processing data on edge. study focuses mechanical degradation package-to-PCB solder interconnects WLCSP using high-resolution piezoresistive sensor. First, measurement workflow was set up optimize...

10.1109/ectc51529.2024.00035 article EN 2024-05-28

ABSTRACT Epoxy molding compounds are widely used as microelectronic encapsulants to protect the electronic circuitry from moisture. Since these hydrophilic they impose a reliability risk, which is assessed by lifetime tests. The interpretation of tests generally based on Fickian absorption. However, this work demonstrates that water absorption shows anomalous behavior due hygrothermal‐induced degradation material. Namely, experimental data show maiden samples much slower than subsequent...

10.1002/app.41192 article EN Journal of Applied Polymer Science 2014-07-18

This work aims to implement a new modeling technique that does consider the grain structure of solder interconnects for simulation material fatigue and damage at cyclic thermomechanical load. It is based on continuum model anisotropic steady-state creep was recently developed CALCE/ University Maryland [1]-[2]. We will briefly recap major steps were taken derive Hill-Garofalo constitutive relations from crystal-viscoplastic (CV) approach. The be presented in detail simple benchmark proposed....

10.1109/eurosime54907.2022.9758900 article EN 2022-04-20

Model order reduction techniques are developed and utilized to make numerical simulations more efficient. The use of Reduce Order Models (ROM) also enables data exchange with external parties without disclosing the sensitive information present in a Full-Order (FOM). It is crucial optimize for both efficiency accuracy ROM keep minimal deviation from FOM. complexity ROM-based simulation depends on definition as well its connection remaining This paper investigates effect different ROM-FOM...

10.1109/eurosime60745.2024.10491495 article EN 2024-04-07

In this work we present results, both experimental and theoretical, related to corrosion of intermetallic layers that are formed at the interface between bond pad ball. Aluminum smear adjacent ball leads an initial crevice. Due a galvanic process oxygen deficit in crevice might occur. Numerical simulations show absence anodic oxidation will become dominant, which acidification crevice, finally enrichment chloride concentration. These conditions highly accelerate layer, thus growth eventually...

10.1109/ectc.2016.192 article EN 2016-05-01

Nowadays highly filled epoxy molding compounds are used as material for encapsulation of microelectronic devices. These always contain a very low concentration ionic impurity. In addition species can originate from chemical processes inside the encapsulation. presence an electrical field ions will migrate through encapsulation, which might eventually result in failures, such corrosion or dendrite growth. Although these failures well-known they still lack knowledge based description their...

10.1109/icept.2008.4606987 article EN 2008-07-01

10.1016/j.elecom.2012.03.034 article EN Electrochemistry Communications 2012-03-29
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