A5055281755- Graphene research and applications
- 2D Materials and Applications
- Topological Materials and Phenomena
- Nanowire Synthesis and Applications
- Carbon Nanotubes in Composites
- Microfluidic and Bio-sensing Technologies
- Microfluidic and Capillary Electrophoresis Applications
- Nanofabrication and Lithography Techniques
- Quantum and electron transport phenomena
- Photocathodes and Microchannel Plates
- Thermal properties of materials
- Advanced Optical Sensing Technologies
- Molecular Junctions and Nanostructures
- Diamond and Carbon-based Materials Research
- Advanced Memory and Neural Computing
- Quantum Dots Synthesis And Properties
- Semiconductor materials and devices
- Boron and Carbon Nanomaterials Research
- Radiation Detection and Scintillator Technologies
- Advancements in Battery Materials
- CCD and CMOS Imaging Sensors
- Nanopore and Nanochannel Transport Studies
Brookhaven National Laboratory
2019-2024
Centre National de la Recherche Scientifique
2013-2020
Sorbonne Paris Cité
2018-2020
École Normale Supérieure - PSL
2016-2020
Université Paris Sciences et Lettres
2018-2020
Université Paris Cité
2018-2020
Sorbonne Université
2010-2020
Laboratoire de Physique de l'ENS
2019
Institut de minéralogie, de physique des matériaux et de cosmochimie
2012
Molybdenum disulfide (MoS${}_{2}$) is a promising material for making two-dimensional crystals and flexible electronic optoelectronic devices at the nanoscale. MoS${}_{2}$ flakes can show high mobilities have even been integrated in nanocircuits. A fundamental requirement such use efficient thermal transport. Electronic transport generates heat which needs to be evacuated, more crucially so nanostructures. Anharmonic phonon-phonon scattering dominant intrinsic limitation insulators. Here,...
Anodic bonding of nanolayers is an easy technique based on a simple apparatus, which has already proven successful in application the fabrication high quality graphene. Here we demonstrate its extension to from several layered materials. The strengths this are throughput rate and ease application. All parameters controllable need be determined carefully. We report optimal found for nine In general, using results 2D layers, most cases much larger than those obtained by 'Scotch tape'...
We show how to prepare graphene samples on a glass substrate with the anodic bonding method. In this method, graphite precursor in flake form is bonded help of an electrostatic field and then cleaved off leave few layer substrate. Now that several methods are available for producing graphene, relevance our method its simplicity practicality about 100 µm lateral dimensions. This also extensible other layered materials. discuss some detailed aspects fabrication results from Raman spectroscopy,...
The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits performance. In this work, use knowledge to analyze DC RF properties bottom-gated on boron nitride exhibiting pronounced velocity saturation by substrate hyperbolic phonon polariton scattering, including Dirac pinch-off effect. We demonstrate maximum...
Two-dimensional semiconductors are increasingly relevant for emergent applications and devices, notably hybrid heterostructures with graphene. We fabricate few-layer, large-area (a few tens of microns across) samples the III–VI GaS, GaSe InSe using anodic bonding method characterize them by simultaneous use optical microscopy, atomic force microscopy Raman spectroscopy. Two-terminal devices a gate constructed to show feasibility based on these.
Abstract The paradigm of graphene transistors is based on the gate modulation channel carrier density by means a local gate. This standard architecture subject to scaling limit length and further restrictions due access contact resistances impeding device performance. We propose novel design, overcoming these issues implementing additional gates underneath region which allow full control Klein barrier taking place at edge. In particular, our work demonstrates GHz operation driven independent...
The massless surface states of topological insulators (TIs) are great interest for tomorrow's electronics. However, excessive defect doping bulk bands significantly hinders the studies that would enable applications TIs, in particular as efficient channel materials high-frequency transistors. authors take an important step toward resolving this problem, by realizing a Bi${}_{2}$Se${}_{3}$-based capacitive device operating at radio frequencies. Judicious choice growth technique, substrate,...
Abstract A method for graphene transfer which is referred to as “bifacial transfer” that allows of multilayer chemical vapor deposition (CVD) from both sides a native metal substrate, such an as‐received nickel catalyst, presented. In traditional methods, the on “non‐preferred” side, is, bottom removed with oxygen plasma before removal catalyst in etchant solution. Although this treatment prevents undesired aggregation films, it fails utilize CVD‐grown graphene. The bifacial reduces cost by...
Photon detectors featuring single-photon sensitivity play a crucial role in various scientific domains, including high-energy physics, astronomy, and quantum optics. Fast response time, high efficiency, minimal dark counts are the characteristics that render them ideal candidates for detecting individual photons with exceptional signal-to-noise ratios, at frequencies range of hundreds MHz. Here, we report on our first design operational results Hybrid Detector (HPD) combines efficiency...
Abstract Photon detectors featuring single-photon sensitivity play a crucial role in various scientific domains, including high-energy physics, astronomy, and quantum optics. Fast response time, high efficiency, minimal dark counts are the characteristics that render them ideal candidates for detecting individual photons with exceptional signal-to-noise ratios, at frequencies range of hundreds MHz. Here, we report on our first design operational results Hybrid Detector (HPD) combines...
Abstract The topological state that emerges at the surface of a insulator (TI) and TI-substrate interface are studied in metal–hBN–Bi 2 Se 3 capacitors. By measuring RF admittance capacitors versus gate voltage, we extract compressibility Dirac located gated TI surface. We show even presence an ungated hosts trivial electron accumulation layer, other always exhibits ambipolar effect quantum capacitance. succeed determining velocity fermions two devices, one with passivated free states. Our...
Micro-engineering is increasingly interested in the use of thin films with thicknesses less than 20nm. Before integrating these promising materials into complex Nano Electro Mechanical Systems (NEMS), their properties must be characterized. They transferred onto specific substrates for analysis. Current manipulation techniques are not suitable transfer as they do allow selection parts object that manipulated, and quality sample altered by traces chemical residues. To perform a selected film...
The paradigm of graphene transistors is based on the gate modulation channel carrier density by means a local gate. This standard architecture subject to scaling limit length and further restrictions due access contact resistances impeding device performance. We propose novel design, overcoming these issues implementing additional gates underneath region which allow full control Klein barrier taking place at edge. In particular, our work demonstrates GHz operation driven independent gates....