A5014334445- Quantum and electron transport phenomena
- Graphene research and applications
- Quantum many-body systems
- Strong Light-Matter Interactions
- Perovskite Materials and Applications
- Surface and Thin Film Phenomena
- Plasmonic and Surface Plasmon Research
- Advancements in Semiconductor Devices and Circuit Design
- Optical Coatings and Gratings
- Radio Frequency Integrated Circuit Design
- Antenna Design and Optimization
- Photonic and Optical Devices
- Magnetic properties of thin films
Peking University
2024
University College London
2020-2024
London Centre for Nanotechnology
2020-2021
Sichuan University
2018
Optical diode-like effect has sparked growing interest in recent years due to its potential applications integrated photonic systems. In this paper, we propose and numerically demonstrate a new type of easy-processing metal/dielectric cylinder composite grating on semi-sphere substrate, which can achieve high-contrast asymmetric transmission unpolarized light for the sum all diffraction modes entire visible region, effectively guide transmitting out substrate. The (ALT) ratio is larger than...
We develop a tight-binding model based on linear combination of atomic orbitals (LCAO) methods to describe the electronic structure arrays acceptors, where underlying basis states are derived from an effective-mass-theory solution for single acceptor in either spherical approximation or cubic model. Our allows arbitrarily strong spin-orbit coupling valence band semiconductor. have studied pairs and dimerized chains acceptors silicon ``independent-hole'' approximation, investigated conditions...
The concept of the Su-Schrieffer-Heeger model, which was successfully introduced in topological photonics, can also be applied to study excitonics. Here we properties a one-dimensional excitonic tight-binding model formed by two-level systems taking into account charge transfer and local excitations. interactions between two types excitons give rise rich spectrum physics, including nontrivial phase uniform chain, unlike conventional topologically flat bands, and, most importantly, transition...
We compute the electronic structure of acceptor clusters in silicon by using three methods to include electron correlations: full configuration interaction, Heitler-London approximation, and unrestricted Hartree-Fock method. show both HL approach UHF method are good approximations ground state CI calculation for a pair acceptors finite linear chains. The total energies chains formation 4-fold degenerate when there is weak bond at end chain, which shown be manifold topological edge states....