A5006870454- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Magnetic properties of thin films
- Magnetic Properties and Applications
- Acoustic Wave Resonator Technologies
- Copper Interconnects and Reliability
- Transition Metal Oxide Nanomaterials
- Metallic Glasses and Amorphous Alloys
- Ferroelectric and Piezoelectric Materials
- Semiconductor materials and interfaces
- Magneto-Optical Properties and Applications
- Advanced Sensor Technologies Research
- Thin-Film Transistor Technologies
- Surface and Thin Film Phenomena
- Semiconductor materials and devices
- Electrical and Thermal Properties of Materials
- Advanced Sensor and Energy Harvesting Materials
University Ferhat Abbas of Setif
1999-2019
The structural, electrical and optical properties of RF sputtered In2O3 : Sn (ITO) thin films the effect post-deposition annealing have been studied. thickness ranges from 225 to 862 nm. X-ray diffraction, scanning electron microscopy (SEM) atomic force (AFM) experiments were performed study structure surface morphology these samples. We found that thinner a ⟨100⟩ texture as film grows preferred orientation changes ⟨111⟩. lattice parameters are be larger than bulk value, indicating samples...
The effect of annealing on the physical properties DC and RF sputtered ITO thin films has been investigated. Two series samples were deposited onto glass substrates, first one consists several In2O3:Sn (ITO) prepared by reactive sputtering with different partial pressure oxygen (ppo); in second one, done powers. Annealing experiments various conditions: air, vacuum Ar atmosphere for temperatures 100 °C to 500 range. Structural studied using Scanning Electron Microscopy (SEM), usual X-ray...
The Magneto-Optic Kerr Effect (MOKE) technique has been used to investigate the magnetic properties of Ni thin films, with thickness [Formula: see text] ranging from 9 163[Formula: text]nm, evaporated onto several substrates (glass, Si (111), mica and Cu) without an Cu underlayer. MOKE observations were correlated surface morphology inferred Scanning Electron Microscope images structural (grain size strain). Some interesting behaviors coercive field (with values in 2 151 Oe range),...
We have studied the effect of thickness on structural, optical and electrical properties In2O3:Sn (ITO) thin films. Two series ITO films been deposited onto glass substrates by DC sputtering at two partial pressures oxygen (ppo): 4 × 10−4 4.75 mbar. Each consists samples with ranging from 306 nm to 1440 nm. observed a change texture thickness; thinner grow 〈111〉 preferred orientation; however as increased, orientation becomes in 〈100〉 direction. The lattice constant grain size also obtained...
In this present work we examine the effect of Ni thickness t (t ranges from 4 to 67 nm) and Cu underlayer (with tCu = 27, 52 90 on structural magnetic properties Ni/Cu bilayers deposited onto CuZn substrate. The films have been by thermal evaporation. were derived X-ray diffraction experiments. texture, strain B ε grain size D are studied as a function thickness. surface morphology is means scanning electron microscope (SEM). vibrating sample magnetometer (VSM) magneto-optic Kerr (MOKE)...
We have studied the effect of substrate on structural and electrical properties Ni thin films. Series films been prepared by dc diode sputtering four different substrates, glass, Si(111), Si(100) mica; thickness ranges from about 47 nm to 317 nm. observed that grown glass has no texture. On other hand deposited Si gets 〈111〉 preferred orientation for all samples, even thinner ones. Grain sizes were found increase with increasing Ni/glass Ni/Si(100), grains in Ni/Si(100) much larger than...
Electrical and magnetic properties were studied for evaporated Fe thin films on glass Si substrates. These investigated by means of the four point probe magneto-optical Kerr effect techniques. Rutherford backscattering (RBS) scanning electron microscopy (SEM) experiments show no interdiffusion at interface Fe/Si these samples. The electrical resistivity is found to be larger in Fe/glass than same thickness. Diffusion grain boundaries seems dominant factor values this 6 110 nm thickness...
We have studied the effect of annealing on structural and electrical properties tin-doped indium oxyde, (ITO), thin films prepared by DC sputtering at different partial pressure oxygen (ppo). Annealing experiments been done in vacuum Ar atmosphere up to a temperature 450 °C. A change texture from as ppo was increased noted as-deposited films. induced cristallinity improved these The lattice constant decreased after annealing. (222) grain size but unaffected atmosphere; while (400) for...