A5037515115- Advanced Thermoelectric Materials and Devices
- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- Laser Material Processing Techniques
- GaN-based semiconductor devices and materials
- Plasma Diagnostics and Applications
- Photonic and Optical Devices
- Gas Sensing Nanomaterials and Sensors
- Plasmonic and Surface Plasmon Research
- Nanowire Synthesis and Applications
- Acoustic Wave Resonator Technologies
- Laser-induced spectroscopy and plasma
- Thermal properties of materials
- Advanced Surface Polishing Techniques
- Graphene research and applications
- Plasma Applications and Diagnostics
- Optical Coatings and Gratings
- Advanced Sensor and Energy Harvesting Materials
- Surface Roughness and Optical Measurements
- Laser-Ablation Synthesis of Nanoparticles
- Gold and Silver Nanoparticles Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Advanced Chemical Sensor Technologies
- nanoparticles nucleation surface interactions
- Carbon Nanotubes in Composites
Centre National de la Recherche Scientifique
2010-2024
Groupe de Recherches sur l'Energétique des Milieux Ionisés
2015-2024
Université d'Orléans
2015-2024
Agence de la Biomédecine
2020
Institut d'électronique de microélectronique et de nanotechnologie
2008-2014
Université Lille Nord de France
2014
Université de Lille
2010-2014
Laboratoire Interdisciplinaire Carnot de Bourgogne
2013-2014
Université de Bourgogne
2013-2014
Université Polytechnique Hauts-de-France
2010
We introduce strongly coupled optical gap antennas to interface radiation with current-carrying electrons at the nanoscale. The transducer relies on nonlinear and electrical properties of an antenna operating in tunneling regime. discuss underlying physical mechanisms controlling conversion involving d-band demonstrate that a simple two-wire can provide advanced optoelectronic functionalities beyond tailoring electromagnetic response single emitter. Interfacing electronic command layer...
We miniaturize geoelectrical acquisition using advanced microfabrication technologies to investigate coupled processes in the critical zone. focus on development of complex electrical conductivity with spectral induced polarization (SIP) method a microfluidic chip equipped electrodes. SIP is an innovative detection that has potential monitor biogeochemical processes. However, due lack microscale visualization processes, interpretation response remains under debate. This approach at...
The waveguide properties are reported for wide bandgap gallium nitride (GaN) structures grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period-superlattice (SPS) buffer layer system. A detailed optical characterization of GaN has been performed the prism coupling technique in order to evaluate its and, particular, refractive index dispersion and propagation loss. In identify structural defects samples, we transmission electron microscopy analysis. results suggest...
Previous studies have shown that undoped and doped SnO2 thin films better optical electrical properties. This study aims to investigate the thermoelectric properties of two distinct semiconducting oxide films, namely F-doped (FTO), by nebulizer spray pyrolysis technique. An X-ray diffraction reveals synthesized exhibit a tetragonal structure with (200) preferred orientation. The film structural quality increases from FTO due substitution F- ions into host lattice. thickness 530 nm for 650...
Anodic aluminum oxide (AAO) films with different pore sizes were prepared to modulate the effective refractive index and birefringence. To investigate relationship between size of AAO film, optical constants obtained using a prism coupler various lasers. With experimental results, dispersion curve alumina itself without pores was extracted theoretical anisotropic model. We demonstrated that could offer wide range birefringence values for device applications. Furthermore, profiles as function...
A complete analysis of GaN-based structures with very promising characteristics for future optical waveguide devices, such as modulators, is presented. First the material growth was optimized low dislocation density and surface roughness. Optical measurements demonstrate excellent properties in terms index temperature dependence while planar propagation losses are below 1dB/cm. Bias applied on both sides epitaxially grown films to evaluate refractive reverse voltage a variation 2.10-3 found...
Microhollow cathode discharges have been produced on silicon platforms using processes usually used for MEMS fabrication. Microreactors consist of 100 or 150 μm-diameter cavities made from Ni and SiO2 film layers deposited a substrate. They were studied in the direct current operating mode two different geometries: planar cavity configuration. Currents order 1 mA could be injected microdischarges gases such as argon helium at working pressure between 130 1000 mbar. When was cathode,...
Optical waveguiding properties of a thick wurtzite aluminum nitride highly [002]-textured hetero-epitaxial film on (001) basal plane sapphire substrate are studied. The physical the determined by X-ray diffraction, atomic force microscopy, microRaman, and photocurrent spectroscopy. refractive index thermo-optic coefficients m-lines spectroscopy using classical prism coupling technique. optical losses this planar waveguide also measured in spectral range 450–1553 nm. lower value is equal to...
Nanographene-mesoporous silicon (G-PSi) composites have recently emerged as a promising class of nanomaterials with tuneable physical properties. In this study, we investigated the impact nanographene coating on Seebeck coefficient mesoporous (PSi) obtained by varying two parameters: porosity and thickness. To achieve this, an electrochemical etching process p + doped Si is presented for control parameters (thicknesses from 20 to 160 µm, close 50%), incorporation through chemical vapor...
We report here the experimental results on a field effect refractive index change into gallium nitride (GaN) structures. This is characterized through common prism-coupling technique with application of vertical direct-current electric field. Surface plasmon propagation was used to increase sensitivity electro-optic measurements. have obtained large variation for GaN epilayer, around 1.4×10−2 at 1.55μm wavelength. In order understand origin modulation, we conducted scanning transmission...
In this Letter, we have designed and fabricated a III-V semiconductor multilayer based on surface plasmon resonance (SPR) operating at the telecom wavelength. Optimization of optogeometrical parameters metal/semiconductor layers required for novel structure was conducted accurately by theoretical tools using Maxwell equations. Technological fabrication device its experimental characterizations an evanescent coupling configuration performed: results confirmed existence SPR associated to sharp...