In this paper, the performance of P-on-n double-layer heterojunction (DLHJ) HgCdTe photodiodes at temperature 77 K is analyzed theoretically. Calculation has been performed for backside-illuminated configuration. The effect photodiode base layer geometry on quantum efficiency and R/sub o/A product analyzed. Also, lateral collection diffusion current photocurrent parameters shown. Moreover dependence p-n junction position within heterostructure band-gap energy profiles presented. Finally,...

This paper presents a theoretical analysis of npBp infrared (IR) barrier avalanche photodiode (APD) performance operating at 300 K based on quaternary compound made AIIIBV-InGaAsSb, lattice-matched to the GaSb substrate with p-type ternary AlGaSb. Impact ionization in multiplication layer InGaAsSb separate absorption, grading, charge, and photodiodes (SAGCM APDs) was studied using Crosslight Software simulation package APSYS. The band structure detector electric field distribution for...

Four types of barrier detectors based on a type II InAs/InAsSb superlattice with wide-gap made solid AlInAsSb lattice matched to the GaSb buffer were compared. The tested differed in doping active layer and level contact at barrier. epitaxial layers deposited GaAs (100) substrates using molecular beam epitaxy method. spectral current–voltage characteristics analyzed highest current responsivities observed structure p-type absorber (p+BpN+). Detectors an n-type (p+Bnn+, n+Bnn+, nBnn+) show...

A method for filling alkali vapor cells with cesium from a dispensing paste is proposed and its compliance miniature atomic clock applications evaluated. The an organic-inorganic composition of molybdate, zirconium-aluminum powder, hybrid binder. It compatible collective deposition processes such as micro-drop dispensing, which can be done under ambient atmosphere at the wafer-level. After sealing by anodic bonding, released consolidated through local heating high power laser. Linear...

This paper introduces an optical 2-axis Micro Electro-Mechanical System (MEMS) micromirror actuated by a pair of electrothermal actuators and set passive torsion bars. The element is dual-reflective circular mirror plate 1 m in diameter. inner connected to rigid frame via bars two diametrically opposite ends located on the rotation axis. A bimorphs generates force onto perpendicular free same angular direction. An array bimorph cantilevers deflects around working angle 45 ∘ for side-view...

We report on the metrological characterization of novel commercially available 894.6 nm vertical-cavity surface-emitting lasers (VCSELs), dedicated to Cs D1 line spectroscopy experiments. The thermal behavior VCSELs is reported, highlighting existence a minimum threshold current and maximum output power in 55°C-60°C range. laser relative intensity noise, measured be -108 dB/Hz at 10 Hz Fourier frequency f for 25 μW, reduced with increased power. noise 108 Hz2/Hz f=100 Hz. spectral linewidth...

This paper presents a thorough analysis of the current–voltage characteristics uncooled HgCdTe detectors optimized for different spectral ranges. heterostructures were grown by means metal–organic chemical vapor deposition (MOCVD) on GaAs substrates. The obtained detector structures measured using Keysight B1500A semiconductor device analyser controlled via LabVIEW automation. experimental compared with numerical calculations performed commercial platform SimuAPSYS (Crosslight). supports...

Fast response is an important property of infrared detectors for many applications. Currently, high-temperature long-wavelength HgCdTe heterostructure photodiodes exhibit subnanosecond time constants while operating under reverse bias. However, nonequilibrium devices excessive low-frequency 1/f noise that extends up to MHz range, representing a severe obstacle their widespread application. Present efforts are focused on zero-bias operation photodiodes. Unfortunately, the constant unbiased...

In this paper we have investigated dark current sources in high-operating temperature HgCdTe and InAsSb barrier infrared detectors fabricated using metal organic chemical vapour deposition molecular beam epitaxy, respectively. The bulk leakage surface components of the were determined for unpassivated devices a round mesa geometry different sizes, from 100 to 500 μm diameters. Results show that depends on both conductivity types active layers semiconductor surfaces. detector component...

The InAs/InAsSb type-II superlattices (T2SLs) grown on a GaSb buffer layer and GaAs substrates were theoretically investigated. Due to the stability at high operating temperatures, T2SLs could be used for detectors in longwave infrared (LWIR) range different sensors include, e.g., CH4 C2H6 detection, which is very relevant health condition monitoring. theoretical calculations carried out by 8 × k·p method. estimated electrons heavy holes probability distribution superlattice (SL) shows that...

In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at Institute Applied Physics, Military University Technology. It is shown that MOCVD technology excellent tool for architecture a wide range composition, donor/acceptor doping, and without post-grown annealing. The device concept specific bandgap integrated Auger-suppression as good solution high-operating...

This paper presents the current status of medium-wave infrared (MWIR) detectors at Military University Technology’s Institute Applied Physics and VIGO System S.A. The metal–organic chemical vapor deposition (MOCVD) technique is a very convenient tool for HgCdTe epilayers, with wide range compositions, used uncooled detectors. Good compositional thickness uniformity was achieved on epilayers grown 2-in-diameter, low-cost (100) GaAs wafers. Most growth performed substrates, which were...

This paper presents results of experimental efforts pointed towards morphology improvement HgCdTe layers grown by MOCVD on GaAs substrates.Selected growth parameters state are presented.The substrate issues like its quality and crystallographic orientation have been discussed.Also influence layer thickness surface roughness is described.It shown that extensive characterization studies using accessible equipments methods: atomic force microscopy (AFM), secondary electron (SEM), laser...

Abstract The acceptor doping of mercury cadmium telluride (HgCdTe) layers grown by MOCVD are investigated. (111)HgCdTe were on (100)GaAs substrates at 350°C using horizontal reactor and interdiffused multilayer process (IMP). TDMAAs AsH3 alternatively used as effective p-type precursors. Incorporation activation rates arsenic have been studied. Over a wide range Hg1−xCdxTe compositions (0.17 < x 0.4), concentration in the from 5×1015 cm−3 to 5×1017 was obtained without postgrowth...

Theoretical and experimental investigations on the response time improvement of unbiased long-wave infrared (LWIR) HgCdTe detectors operating at temperatures T=230 K were presented. Metal–organic chemical vapor deposition technology is an excellent tool in fabrication different detector structures with a wide range composition donor/acceptor doping without postgrown ex-situ annealing. The constant lower biased due to Auger-suppression phenomena reduction diffusion capacitance related wider...