This paper presents a theoretical analysis of npBp infrared (IR) barrier avalanche photodiode (APD) performance operating at 300 K based on quaternary compound made AIIIBV-InGaAsSb, lattice-matched to the GaSb substrate with p-type ternary AlGaSb. Impact ionization in multiplication layer InGaAsSb separate absorption, grading, charge, and photodiodes (SAGCM APDs) was studied using Crosslight Software simulation package APSYS. The band structure detector electric field distribution for...

This paper presents a thorough analysis of the current–voltage characteristics uncooled HgCdTe detectors optimized for different spectral ranges. heterostructures were grown by means metal–organic chemical vapor deposition (MOCVD) on GaAs substrates. The obtained detector structures measured using Keysight B1500A semiconductor device analyser controlled via LabVIEW automation. experimental compared with numerical calculations performed commercial platform SimuAPSYS (Crosslight). supports...

The InAs/InAsSb type-II superlattices (T2SLs) grown on a GaSb buffer layer and GaAs substrates were theoretically investigated. Due to the stability at high operating temperatures, T2SLs could be used for detectors in longwave infrared (LWIR) range different sensors include, e.g., CH4 C2H6 detection, which is very relevant health condition monitoring. theoretical calculations carried out by 8 × k·p method. estimated electrons heavy holes probability distribution superlattice (SL) shows that...

This paper presents the current status of medium-wave infrared (MWIR) detectors at Military University Technology’s Institute Applied Physics and VIGO System S.A. The metal–organic chemical vapor deposition (MOCVD) technique is a very convenient tool for HgCdTe epilayers, with wide range compositions, used uncooled detectors. Good compositional thickness uniformity was achieved on epilayers grown 2-in-diameter, low-cost (100) GaAs wafers. Most growth performed substrates, which were...

Abstract Deep-level transient spectroscopy (DLTS) measurements were performed on HgCdTe heterostructure photodiode grown by metal-organic chemical vapor deposition (MOCVD) GaAs substrate. In order to extract defects from individual layers of the heterostructure, three consecutive etchings performed. first experiment, N + /T/p/T/P /n structure was chemically etched bottom contact obtain a mesa-type detector. Six localized extracted across entire photodiode. second made p -type absorber. Two...

The cooling requirement for long-wave infrared detectors still creates significant limitations to their functionality. phenomenon of minority-carrier exclusion and extraction in narrow-gap semiconductors has been intensively studied over three decades used increase the operating temperatures devices. Decreasing free carrier concentrations below equilibrium values by a stationary non-equilibrium depletion device absorber leads suppression Auger generation. In this paper, we focus on analyzing...

This paper presents a theoretical analysis of an nBp infrared barrier detector’s performance intended to operate at room temperature (300 K) based on AIIIBV materials—In1-xGaxAsySb1−y quaternary compound—lattice-matched the GaSb substrate with p-n heterojunction ternary Al1−xGaxSb barrier. Numerical simulations were performed using commercial Crosslight Software—package APSYS. The band structure detector and electric field distribution for without potential determined. influence...

Abstract Photoluminescence (PL) is one of the commonly used methods to determine energy gap ( $${E}_{\mathrm{g}}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>E</mml:mi> <mml:mi>g</mml:mi> </mml:msub> </mml:math> ) semiconductors. In order use it correctly, however, shape PL peak must be properly analyzed; otherwise, value burdened with a large error. often mistakenly attributed position, which in type-II superlattices (T2SLs) exhibits typical “S-shaped”...

The InAs/InAs1−xSbx type-II superlattices (T2SLs) grown on GaSb buffer layer and GaAs substrates have recently been applied for detectors long wavelength infrared (LWIR) range high operating temperature (HOT) conditions. detailed modeling of T2SLs minibands structure required detector's design optimization process relies accurate knowledge the InAs1−xSbx bandgap band edge position. k∙p (8 × 8 method) was used to analyze valence offset (VBO) between InAs InAs1−xSbx, hence position at xSb...

Abstract The type-2 InAs/InAs 1−x Sb x superlattices on GaAs substrate with GaSb buffer layer were investigated by comparison of theoretical simulations and experimental data. algorithm for selection input parameters (binary ternary materials) is presented. We proposed the method bandgap energy extraction absorption curve. correct choice bulk materials bowing alloys allows to reach good agreement data approach. One key achievements this work was an electron affinity assessment device’s...

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This paper proposes three methods of the optimal smart meter selection for acting as a data concentrator in automatic reading last mile network.The study explains reasons why selected should also act concentrator, addition to its basic role.To select meter, either reliability communication or speed process were taken into account.Graph theory is employed analyze network, described sets nodes and unreliable links.The frame error ratio was used assess unreliability whilst number hops describe...

The InAs/InAsSb type-II superlattice (T2SL) detector with wide-gap AlGaAsSb electron barrier was made and analyzed. epitaxial layer a design of n+nBnN+ deposited on GaAs (1 0 0) substrate using the molecular beam epitaxy. detector's spectral response current–voltage characteristics were measured at temperatures 230 K 300 K. Experimental data compared numerical simulations carried out commercial APSYS program. good fit has provided output parameters for further to optimize structure time....

The long-wave infrared (LWIR) interband cascade detector with type-II superlattices (T2SLs) and a gallium-free (“Ga-free”) InAs/InAsSb (x = 0.39) absorber was characterized by photoluminescence (PL) spectral response (SR) methods. Heterostructures were grown molecular beam epitaxy (MBE) on GaAs substrate (001) orientation. crystallographic quality confirmed high-resolution X-Ray diffraction (HRXRD). Two independent methods, combined theoretical calculations, able to determine the transitions...

Abstract Experimental results are reported for a medium-wavelength infrared (MWIR) HgCdTe photodetector designed in joint laboratory run by VIGO Photonics S.A. and the Military University of Technology. The parameters MWIR detectors fabricated with heterostructures were studied. Advances metal–organic chemical vapor deposition (MOCVD) technique enable growth epilayers wide range composition doping, used uncooled detectors. Device-quality deposited on 2-inch-diameter, low-cost (100) GaAs...

A3B5 materials used in the construction of a superlattice have properties that enable design devices (to include avalanche photodiodes) optimized for use infrared detection. These are military and medicine industries, other areas science technology. This paper presents theoretical assessment analysis impact stresses on an InAs/InAsSb type-II (T2SL) grown GaSb buffer layer, considering band gap energy effective masses at temperature 150 K. The research was carried out with commercial platform...

The paper presents the numerical analysis of performance nBn type-II superlattice barrier detector operated at 230 K. Results theoretical predictions were compared to experimental data for composed AlAs0.15Sb0.85 and InAs (5.096 nm)/InAs0.62Sb0.38 (1.94 nm) absorber contact layer. Detector structure was grown on GaAs substrate using molecular beam epitaxy. To determine position electron miniband first heavy hole state in superlattice, we have used a k·p model which can also predict...

In the last two decades an implementation of barrier detectors considerably strengthen position InAsSb-based bulk and superlattice structures in infrared detector family. spite fact that dependence InAs1−xSbx energy gap (Eg) on Sb, x-composition temperature, T, has been experimentally investigated by many research groups since 1964, its Eg(x,T) is not precisely evaluated. An uncertainty value detrimental influence intrinsic carrier concentration estimate. This paper attempts to critically...

In this paper interband cascade type-II InAs/GaSb superlattice photodetector in temperature range from 225 K to 300 is investigated. The article concerns the theoretical simulations of detectivity characteristics detector with equal absorber regions each stage. obtained are comparable experimentally measured, assuming that transport determined by dynamics intrinsic carriers. greatest fit observed for overlap values which increase decreasing form 0.175 eV 0.132 K.