A5103272962- Liquid Crystal Research Advancements
- Phase-change materials and chalcogenides
- Advanced Data Storage Technologies
- Advanced Memory and Neural Computing
- Chalcogenide Semiconductor Thin Films
CEA LETI
2018
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2018
Institut polytechnique de Grenoble
2018
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2018
Aix-Marseille Université
2018
STMicroelectronics (France)
2018
CEA Grenoble
2018
Université Grenoble Alpes
2018
In this paper, a new continuous multilevel compact model for phase-change memory (PCM) is proposed. It based on the modified rate equations with introduction of variable related to material melting. The evaluated using large set dynamic measurements and shows good accuracy single card. All fitting parameters are discussed, their impacts detailed. Full circuit simulation performed. Good convergence fast time suggest that can be exploited PCM design.
Phase-change memory (PCM) compact modeling of the threshold switching based on a thermal runaway in Poole–Frenkel conduction is proposed. Although this approach often used physical models, first time it implemented model. The model accuracy validated by good correlation between simulations and experimental data collected PCM cell embedded 90 nm technology. A wide range intermediate states measured accurately modeled with single set parameters, allowing multilevel programing. convergence...
To achieve high yield on product embedding PCM memory, it is mandatory to provide designers accurately calibrated compact model. this goal, develop standardized model card extraction methodology. In paper, we present a flow based minimal set of static and dynamic measurements. Based measurement, characteristics are first obtained parameters extracted without any loop back, i.e. each parameter only once given characteristic. After procedure, values validated through comparison with an extra...