A5076847297- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Photovoltaic System Optimization Techniques
- Magnetic properties of thin films
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Silicon Nanostructures and Photoluminescence
- Advancements in Semiconductor Devices and Circuit Design
Fraunhofer Institute for Solar Energy Systems
2022-2025
TU Dortmund University
2022
Epitaxially grown silicon wafers (EpiWafers) have a lower carbon footprint than conventional produced by ingot crystallization but also initial material quality which can be significantly improved gettering. We show that in situ gettering during the application of asymmetric n‐type and p‐type tunnel oxide passivating contacts (TOPCon) increases EpiWafers when fabricating bottom solar cells for perovskite‐silicon tandem device. In specific, effect TOPCon layers is compared to phosphorus...
Conventional silicon (Si) wafers are produced by energy‐intensive ingot crystallization which is responsible for a major share of solar cell's carbon footprint. This work explores Si epitaxially grown (EpiWafers) that direct epitaxial deposition trichlorosilane on reusable substrate. approach requires less energy and material hence offers potential reduced cost Solar cells made from EpiWafers usually suffer efficiency losses due to recombination at structural crystal defects associated with...
Aiming for highly efficient solar cells based on wafers with a low carbon footprint, silicon (Si) EpiWafers are grown epitaxially reusable, doped Si substrates stack of porous layers (PorSi) detachment. A state‐of‐the‐art p‐type EpiWafer exhibiting minority charge carrier lifetime up to 2.2 ms detected at an excess density ≈1 × 10 15 cm −3 by photoluminescence (PL) imaging is presented. This translates predicted cell efficiency 25.6%, calculated limiting bulk recombination analysis (ELBA),...
We discuss the implications of a small indium content (3%) in GaAs epilayer on electron and nuclear spin relaxation due to enhanced quadrupolar effects induced by strain. Using weakly perturbative noise spectroscopy, we study dynamics without explicit excitation. The observed temperature dependence indicates presence localized states, which have an increased interaction with surrounding spins. Time-resolved spectroscopy is then applied optically pumped system. It shows multi-exponential...
Combining the advantages of a high‐efficiency solar cell concept and low carbon footprint base material is promising approach for highly efficient, sustainable, cost‐effective cells. In this work, we investigate suitability epitaxially grown p‐type silicon wafers cells with tunnel oxide passivating contact rear emitter. As first proof principle, an efficiency limiting bulk recombination analysis deposited on high quality substrates (EpiRef) unveils potentials exceeding 25% three different...