- Silicon and Solar Cell Technologies
- Photovoltaic System Optimization Techniques
- Thin-Film Transistor Technologies
- Laser-Ablation Synthesis of Nanoparticles
- Laser Material Processing Techniques
- Photovoltaic Systems and Sustainability
- Silicon Nanostructures and Photoluminescence
- Electron and X-Ray Spectroscopy Techniques
- Nonlinear Optical Materials Studies
- Semiconductor materials and interfaces
Fraunhofer Institute for Solar Energy Systems
2019-2023
Institut für Nanophotonik
2015
This article introduces a postmetallization "passivated edge technology" (PET) treatment for separated silicon solar cells consisting of aluminum oxide deposition with subsequent annealing. We present our work on bifacial shingle that are based the passivated emitter and rear cell concept. To separate devices after metallization firing, we use either conventional laser scribing mechanical cleaving (LSMC) process or thermal separation (TLS) process. Both processes show similar pseudo fill...
Abstract The EU crystalline silicon (c‐Si) PV manufacturing industry has faced strong foreign competition in the last decade. To strive this competitive environment and differentiate itself from competition, c‐Si needs to (1) focus on highly performing technologies, (2) include sustainability by design, (3) develop differentiated module designs for a broad range of applications tap into rapidly growing existing new markets. This is precisely aim 3.5 years long H2020 funded HighLite project,...
Edge losses in silicon solar cells are becoming more important current photovoltaic research, especially shingled cell modules with high perimeter to area ratios. Hence, this study a new approach is presented quantify edge recombination by using photoluminescence (PL) measurements combined device modelling. The main focus of work determine and separate the contribution two relevant losses: (i) at bulk edge, described an effective surface velocity Seff,edge, (ii) pn-junction edge-length...
Combining the advantages of a high‐efficiency solar cell concept and low carbon footprint base material is promising approach for highly efficient, sustainable, cost‐effective cells. In this work, we investigate suitability epitaxially grown p‐type silicon wafers cells with tunnel oxide passivating contact rear emitter. As first proof principle, an efficiency limiting bulk recombination analysis deposited on high quality substrates (EpiRef) unveils potentials exceeding 25% three different...