R. Preu

ORCID: 0000-0003-1438-5303
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About
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Research Areas
  • Silicon and Solar Cell Technologies
  • Thin-Film Transistor Technologies
  • Semiconductor materials and interfaces
  • solar cell performance optimization
  • Silicon Nanostructures and Photoluminescence
  • Integrated Circuits and Semiconductor Failure Analysis
  • Photovoltaic System Optimization Techniques
  • Photovoltaic Systems and Sustainability
  • Advanced Surface Polishing Techniques
  • Semiconductor materials and devices
  • Nanowire Synthesis and Applications
  • Laser Material Processing Techniques
  • Advancements in Semiconductor Devices and Circuit Design
  • Chalcogenide Semiconductor Thin Films
  • 3D IC and TSV technologies
  • Electronic Packaging and Soldering Technologies
  • Electron and X-Ray Spectroscopy Techniques
  • Technology Assessment and Management
  • Ion-surface interactions and analysis
  • Semiconductor Lasers and Optical Devices
  • Diamond and Carbon-based Materials Research
  • Silicon Carbide Semiconductor Technologies
  • Laser-induced spectroscopy and plasma
  • Environmental Impact and Sustainability
  • Industrial Vision Systems and Defect Detection

Fraunhofer Institute for Solar Energy Systems
2013-2024

Fraunhofer Society
2003-2014

University of Freiburg
2009-2013

From today's viewpoint future solar cells will be thinner, of higher efficiency and produced in greater numbers. A cell concept able to fit these developments could the passivated emitter rear cell. With a new laser-based process (laser-fired contacts), point contact pattern this can implemented industrially. After deposition dielectric passivation layer metal on top, Nd-YAG laser is used alloy points through layer. Excellent efficiencies have been achieved which approach closely those...

10.1002/pip.422.abs article EN Progress in Photovoltaics Research and Applications 2002-01-01

Aluminum oxide layers can provide excellent passivation for lowly and highly doped p-type silicon surfaces. Fixed negative charges induce an accumulation layer at the interface, resulting in very effective field-effect passivation. This paper presents negatively charged (Qox=−2.1×1012 cm−2) aluminum produced using inline plasma-enhanced chemical vapor deposition system, leading to low recombination velocities (∼10 cm s−1) on low-resistivity substrates. A minimum static rate (100 nm min−1)...

10.1063/1.3250157 article EN Applied Physics Letters 2009-10-12

Ultrathin (7 nm) atomic layer deposited Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layers and high-deposition-rate plasma-enhanced chemical vapor AlO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> have been applied characterized as rear-surface passivation for high-efficiency silicon solar cells. The excellent efficiency values (up to 21.3%-21.5%) demonstrate that both...

10.1109/led.2010.2049190 article EN IEEE Electron Device Letters 2010-05-28

We present an experimental approach to extract the dark saturation current density j0e-met at emitter-metal interface of front contact. For this purpose, 2×2 cm2 sized silicon solar cells have been realized featuring different metallization fractions FM. By simply applying one-diode-model, j01 is determined from open circuit voltage Voc. From slope over FM plot, extracted. However, only valid if dominant recombination mechanism Voc features a diode character that close unity. Hence, local...

10.1016/j.egypro.2011.06.111 article EN Energy Procedia 2011-01-01

In this paper we give a mathematical derivation of how luminescence images silicon solar cells can be calibrated to local junction voltage. We compare two different models extract spatially resolved physical cell parameters from voltage images. The first model is the terminal connected diode model, where each pixel regarded as with certain dark saturation current, which via series resistance terminal. This frequently used evaluate measurement data several techniques respect resistance....

10.1063/1.3443438 article EN Journal of Applied Physics 2010-07-01

For optimum performance of solar cells featuring a locally contacted rear surface, the metallization fraction as well size and distribution local contacts are crucial, since Ohmic recombination losses have to be balanced. In this work we present set equations which enable calculate trade off without need numerical simulations. Our model combines established analytical empirical predict energy conversion efficiency device. experimental verification, fabricate devices from float zone silicon...

10.1063/1.3506706 article EN Journal of Applied Physics 2010-12-15

Current studies reveal the expectation that photovoltaic (PV) energy conversion will become front-runner technology to stem against extent of global warming by middle this century. In 2019, passivated emitter and rear cell (PERC) design has taken over majority solar production. The objective paper is review fundamental physics underlying architecture, its development past few decades an industry main stream product, as well in-depth characterization current cells future potential device...

10.1063/5.0005090 article EN Applied Physics Reviews 2020-12-01

Abstract For an alternative front side metallization process without screen printing of metal paste the selective opening surface anti‐reflection coating could be realized by laser ablation. A successful implementation this scheme requires direct absorption light within coating, since emitter underneath must not damaged severely. Additionally, ablation feasible on textured surfaces. In paper, we show that with a wavelength 355 nm and pulse length approximately 30 ns is absorbed directly...

10.1002/pip.856 article EN Progress in Photovoltaics Research and Applications 2008-10-15

Abstract Bifacial solar cells and modules are a promising approach to increase the energy output of photovoltaic systems, therefore decrease levelized cost electricity (LCOE). This work discusses bifacial silicon cell concepts PERT (passivated emitter, rear totally diffused) BOSCO (both sides collecting contacted) in terms expected module LCOE based on in‐depth numerical device simulation advanced modelling. As references, Al‐BSF (aluminium back‐surface field) PERC emitter rear) with local...

10.1002/pip.2730 article EN Progress in Photovoltaics Research and Applications 2016-01-14

The loss analysis of state‐of‐the‐art p‐type Czochralski‐grown silicon passivated emitter and rear solar cells (PERC) fabricated in a manner close to industrial production is presented this paper. 6‐inch are featuring homogeneous on the front side, an Al 2 O 3 passivation layer local contacts side. peak energy conversion efficiencies obtained 21.1% for standard antireflection coating (ARC) 21.4% double‐layer ARC. based extended characterization special samples, which allow separation...

10.1002/pssa.201600708 article EN physica status solidi (a) 2016-12-05

Excellent surface passivation of crystalline silicon (c-Si) is desired for a number c-Si based applications ranging from microelectronics to photovoltaics. A plasma-enhanced chemical vapor deposition double layer amorphous silicon-rich oxynitride and nitride (SiNx) can provide nearly perfect after subsequent rapid thermal process (RTP) light soaking. The resulting effective minority carriers’ lifetime (τeff) close the modeled maximum on p-type as well n-type c-Si. Restrictions RTP passivated...

10.1063/1.3544421 article EN Journal of Applied Physics 2011-02-01

The permanent deactivation called regeneration of light induced degradation in p-type Czochralski silicon solar cells is analyzed this paper. Industrial were fabricated with varying hydrogen concentration the nitride anti-reflection layer but an otherwise identical setup. They are subsequently degraded, annealed and regenerated by simultaneous illumination heating. Measurements cell parameters reveal crucial effect on regeneration.

10.1016/j.egypro.2011.06.100 article EN Energy Procedia 2011-01-01

This article introduces a postmetallization "passivated edge technology" (PET) treatment for separated silicon solar cells consisting of aluminum oxide deposition with subsequent annealing. We present our work on bifacial shingle that are based the passivated emitter and rear cell concept. To separate devices after metallization firing, we use either conventional laser scribing mechanical cleaving (LSMC) process or thermal separation (TLS) process. Both processes show similar pseudo fill...

10.1109/jphotov.2019.2959946 article EN cc-by IEEE Journal of Photovoltaics 2020-01-14

Abstract This work shows the first demonstration of thermal laser separation (TLS) and post‐metallization passivated edge technology (PET) applied to tunnel‐oxide contact (TOPCon) shingle solar cells. The cells with 26.46 mm × 158.75 size are separated from industrial full‐square TOPCon host singulation is performed either by TLS front side (emitter side) or conventional scribe mechanical cleaving (LSMC) rear (emitter‐free side). optimized in this yields up 0.2% abs more efficient after...

10.1002/pip.3680 article EN cc-by Progress in Photovoltaics Research and Applications 2023-02-21

In the first part of this paper we estimate efficiency potential crystalline silicon solar cells on conventionally pulled p-type boron-doped Czochralski-grown with typical oxygen concentrations. Taking into account an industrial high-efficiency cell structure featuring fine-line metallization, shallow and well-passivated emitter a rear surface dielectric passivation local laser-fired point contacts, maximum achievable is around 20%. The main limitation such due to rather low bulk lifetime...

10.1109/pvsc.2010.5614203 article EN 2010-06-01

This paper focusses in particular on the influence of layer thickness passivation quality, charge density and interface defects PECVD Al2O3 layers c-Si surfaces. The surface recombination velocity defect are observed to increase by decreasing thickness. However, negative charges remains almost constant with values around 3 1012 cm-2. An optimal quality is obtained for thicknesses 15 nm higher. A linear relation between Dit was established, allowing estimation electron capture cross section...

10.1016/j.egypro.2011.06.195 article EN Energy Procedia 2011-01-01

We present a standard p + pn solar cell device exhibiting full-area aluminum back surface field (BSF) and conversion efficiency of 20.1%.The front side features shallow emitter which has been exposed to short oxidation step reduces the dark saturation current density j 0e 160 fA/cm 2 on textured surface.The contact is formed by light-induced nickel silver plating.Also, devices featuring screen-printed contacts have realized that reach 19.8%.PC1D simulations are presented in order extract...

10.1109/led.2011.2157656 article EN IEEE Electron Device Letters 2011-07-20

Abstract This work presents the results of a detailed series resistance characterization silicon solar cells with screen‐printed front contacts using hotmelt silver paste. Applying technology energy conversion efficiencies up to 18·0% on monocrystalline wafers size 12·5 cm × have been achieved, an increase 0·3% absolute compared conventional contacts. is mainly due reduction in finger values as low 14 Ω/m, which reduces cell significantly. To retrieve lumped accurately possible under...

10.1002/pip.755 article EN Progress in Photovoltaics Research and Applications 2007-03-02

Higher solar cell efficiencies enable a reduction of the cost per watt ratio, if production effort is maintained at an acceptable level. A proven high-efficiency concept passivated emitter and rear (PERC). However, transfer this structure from demonstrator level to industrial application challenging. We present simple approach for fabrication PERC cells which utilizes simultaneous passivation front surface by thin layer thermally grown oxide. This Thermal Oxide Passivated All Sides (TOPAS)...

10.1109/pvsc.2010.5614048 article EN 2010-06-01

We present metal wrap through passivated emitter and rear solar cells (MWT-PERC) on monocrystalline p-type silicon featuring laser-doped selective structures in combination with either screen-printed (SP) or more advanced dispensed front side contacts. Thermally grown oxide layers serve as surface passivation. Laser-fired contacts connect the SP aluminum contact to base. The features solder for both polarities. Conversion efficiency values of 20.6% float-zone 20.1% Czochralski-grown (not...

10.1109/led.2011.2167709 article EN IEEE Electron Device Letters 2011-10-17
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