In order to utilize the full potential of solar cells fabricated on n-type silicon, it is necessary achieve an excellent passivation B-doped emitters. Experimental studies test structures and theoretical considerations have shown that a negatively charged dielectric layer would be ideally suited for this purpose. Thus, in work negative-charge Al2O3 was applied as surface high-efficiency silicon cells. With front layer, confirmed conversion efficiency 23.2% achieved. For open-circuit voltage...

Aluminum oxide layers can provide excellent passivation for lowly and highly doped p-type silicon surfaces. Fixed negative charges induce an accumulation layer at the interface, resulting in very effective field-effect passivation. This paper presents negatively charged (Qox=−2.1×1012 cm−2) aluminum produced using inline plasma-enhanced chemical vapor deposition system, leading to low recombination velocities (∼10 cm s−1) on low-resistivity substrates. A minimum static rate (100 nm min−1)...

Silicon solar cells featuring the highest conversion efficiencies are made from monocrystalline n-type silicon. The superior crystal quality of high-performance multicrystalline silicon (HP mc) in combination with inherent benefits doping (higher tolerance to common impurities) should allow fabrication high-efficiency also on mc In this paper, we address HP diffused boron front emitter and full-area passivating rear contact (TOPCon). was crystallized at Fraunhofer ISE a very high average...

Ultrathin (7 nm) atomic layer deposited Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layers and high-deposition-rate plasma-enhanced chemical vapor AlO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> have been applied characterized as rear-surface passivation for high-efficiency silicon solar cells. The excellent efficiency values (up to 21.3%-21.5%) demonstrate that both...

GaInP/GaAs//Si solar cells with three active p-n junctions were fabricated by surface activated direct wafer bonding between GaAs and Si. The bond is performed at room temperature leads to a conductive transparent interface. This allows the fabrication of high-efficiency monolithic tandem in both Si III-V materials. technology overcomes earlier challenges integration caused large difference lattice constant thermal expansion. Transmission electron microscopy revealed 5-nm thin amorphous...

Stacking III-V p-n junctions on top of wafer-based silicon solar cells is a promising way to go beyond the single-junction efficiency limit. In this study, triple-junction GaInP/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> As//Si were fabricated using surface-activated direct wafer bonding. Metal-organic-vapor-phase-epitaxy-grown As are bonded at low temperature independently...

Abstract Tunnel oxide passivating contacts (TOPCon) consisting of an ultrathin tunnel capped by a doped Si film exhibit excellent passivation and contact properties. The application these has so far resulted in efficiencies up to 25.7% realized with n ‐type solar cell featuring front‐side boron‐doped p + emitter ‐TOPCon as full‐area rear electron contact. In this work, we study the same structure on Si. case, diffusion front acts surface field (FSF) layer emitter. One benefit rear‐junction...

Highly efficient III-V/Si triple-junction solar cells were realized by a fabrication process based on direct wafer bonding: Ga0.51In0.49P/GaAs dual-junction grown inverted metal organic vapor phase epitaxy GaAs substrates and bonded to separately fabricated Si cells. The fast atom beam activated bond between highly doped n-Si n-GaAs enabled transparent electrically conductive interface. Challenges arising from the different thermal expansion coefficients of III-V semiconductors circumvented,...

Abstract III–V//Si multijunction solar cells offer a pathway to increase the power conversion efficiency beyond fundamental Auger limit of silicon single‐junctions. In this work, we demonstrate how two‐terminal wafer‐bonded triple‐junction cell is increased from 34.1 % 35.9 under an AM1.5g spectrum, by optimising III–V top structure. This highest reported date for silicon‐based technologies. improvement was accomplished two main factors. First, integration GaInAsP absorber in middle...

Abstract A spectral beam‐splitting architecture is shown to provide an excellent basis for a four junction photovoltaic receiver with virtually ideal band gap combination. Spectrally selective beam‐splitters are used create very efficient light trap in form of 45° parallelepiped. The distributes incident radiation onto the different solar cells optical efficiency more then 90%. Highly including III–V semiconductors and silicon were fabricated mounted into trapping assembly. An integrated...

Abstract Al 2 O 3 has been shown to provide an outstanding passivation quality on p‐type surfaces after annealing at moderate temperatures (∼425 °C). However, most industrial silicon solar cells are based printing technologies for metallization, including a high temperature firing step the contact formation. To investigate thermal stability of passivation, symmetrical p and + np lifetime samples were coated with exposed typical processes between 700 °C 850 °C. Up 825 is be stable highly...

Abstract Thin layers of Al 2 O 3 always require a thermal post‐deposition treatment to activate the passivation on crystalline silicon surfaces. In this work, we studied influence different treatments for activation passivating ALD single and /SiN x stacks. For stacks, especially with less than 5 nm , short high temperature process at ∼800 °C results in remarkably lower surface recombination compared commonly applied annealing 425 °C. We observed that four cycles are sufficient reach full...

Thin layers of Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> are known to feature excellent passivation properties on highly boron-doped silicon surfaces. In this paper, we present a detailed study the quality single and stacks antireflection SiN xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> emitters, where was deposited by plasma-assisted atomic layer deposition...

III–V on Si multijunction solar cells exceede the efficiency limit of single‐junction devices but are often challenged by expensive layer transfer techniques. Here, progress in development direct epitaxial growth for GaInP/GaAs/Si triple‐junction is reported. absorbers with a total thickness 4.9 μm grown onto bottom cell using metal organic vapor phase epitaxy. A new record 22.3% under AM1.5g conditions reached herein, outperforming previous value 19.7%. This improvement possible through...

Gallium phosphide (GaP) is, in theory, a near-ideal heteroemitter for silicon solar cells due to its electronic and crystal properties. In this paper, we present n-type gallium on p-type heterojunction which have been prepared by direct growth via metal-organic vapor phase epitaxy (MOVPE). The devices show very promising results quantum efficiency current density. However, the open-circuit voltage of 560 mV is far from ideal. investigation two different nucleation processes reveals...

Monolithic multi-junction solar cells made on active silicon substrates are a promising pathway for low-cost high-efficiency devices. We present results of GaInP/GaAs/Si triple-junction cells, fabricated by direct growth in metal-organic vapor phase epitaxy reactor using GaAs <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> P xmlns:xlink="http://www.w3.org/1999/xlink">1-y</sub> buffer structure to overcome the lattice mismatch between Si...

The terrestrial photovoltaic market is dominated by single‐junction silicon solar cell technology. However, there a fundamental efficiency limit at 29.4%. This overcome multijunction devices. Recently, GaInP/GaAs//Si wafer‐bonded triple‐junction two‐terminal device presented with 33.3% (AM1.5g) efficiency. Herein, it analyzed how this improved to reach conversion of 34.1%. By improving the current matching, an 35% (two terminals, AM1.5g) expected.

III–V/Si multi‐junction solar cells are potential successors to the silicon single‐junction cell due their efficiency of up 40% in radiative limit. [1] Herein, latest results epitaxially integrated GaInP/GaAs/Si triple‐junction presented. To reduce parasitic absorption losses, which have limited current density Si bottom previous devices, transparent Al x Ga 1– As y P step‐graded metamorphic buffers investigated. Compared with GaAs buffers, transmittance is enhanced significantly, while no...

n-Type solar cells with passivated rear surface and point contacts have been proven to an enormous efficiency potential. However, industrially feasible process for the realization of locally contacted side this cell type is still missing. Therefore, a passivation scheme based on doped amorphous silicon carbide was investigated. The newly developed PassDop layer results in excellent and, at same time, acts as doping source. After PECVD layer, contact points are opened by laser pulse,...

Black silicon is an interesting surface texture for solar cells because of its extremely low reflectance on a wide wavelength range and acceptance angle. In this paper we present how black (b-Si) texturization can be applied the boron doped front n-type cell resulting in efficiency 18.7%. We show that highly emitter formed without losing good optical properties atomic layer deposited aluminum oxide provides passivation these b-Si emitters.