A5027115754- solar cell performance optimization
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Nanowire Synthesis and Applications
- Quantum Dots Synthesis And Properties
- Hybrid Renewable Energy Systems
- Solar Thermal and Photovoltaic Systems
- Silicon Nanostructures and Photoluminescence
- Solar-Powered Water Purification Methods
- Electrocatalysts for Energy Conversion
- Advanced battery technologies research
- GaN-based semiconductor devices and materials
- Electron and X-Ray Spectroscopy Techniques
- Photovoltaic Systems and Sustainability
- Surface and Thin Film Phenomena
- Advanced Semiconductor Detectors and Materials
- Advanced Electron Microscopy Techniques and Applications
- Human-Automation Interaction and Safety
- Copper-based nanomaterials and applications
- Fusion materials and technologies
- Ga2O3 and related materials
- Tropical and Extratropical Cyclones Research
Fraunhofer Institute for Solar Energy Systems
2016-2025
Umicore (Belgium)
2023
IMEC
2023
Rhine-Waal University of Applied Sciences
2021
Philipps University of Marburg
2010-2012
Scripps Institution of Oceanography
2001
University of California, San Diego
2001
Efficient unassisted solar water splitting, a pathway to storable renewable energy in the form of chemical bonds, requires optimization photoelectrochemical device based on photovoltaic tandem heterojunctions. We report monolithic photocathode architecture that exhibits significantly reduced surface reflectivity, minimizing parasitic light absorption and reflection losses. A tailored multifunctional crystalline titania interphase layer acts as corrosion protection layer, with favorable band...
GaP-layers on Si(001) can serve as pseudo-substrates for a variety of novel optoelectronic devices. The quality the GaP nucleation layer is crucial parameter performance such Especially, anti-phase domains (APDs) evolving at mono-atomic steps Si-surface affect adversely. size, shape, and possible charge APDs their boundaries depend polarity surrounding crystal. observed caused by A-type double step configuration reconstruction prior to growth prevalent binding Ga Si under optimized...
III–V on Si multijunction solar cells exceede the efficiency limit of single‐junction devices but are often challenged by expensive layer transfer techniques. Here, progress in development direct epitaxial growth for GaInP/GaAs/Si triple‐junction is reported. absorbers with a total thickness 4.9 μm grown onto bottom cell using metal organic vapor phase epitaxy. A new record 22.3% under AM1.5g conditions reached herein, outperforming previous value 19.7%. This improvement possible through...
Gallium phosphide (GaP) is, in theory, a near-ideal heteroemitter for silicon solar cells due to its electronic and crystal properties. In this paper, we present n-type gallium on p-type heterojunction which have been prepared by direct growth via metal-organic vapor phase epitaxy (MOVPE). The devices show very promising results quantum efficiency current density. However, the open-circuit voltage of 560 mV is far from ideal. investigation two different nucleation processes reveals...
Monolithic multi-junction solar cells made on active silicon substrates are a promising pathway for low-cost high-efficiency devices. We present results of GaInP/GaAs/Si triple-junction cells, fabricated by direct growth in metal-organic vapor phase epitaxy reactor using GaAs <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> P xmlns:xlink="http://www.w3.org/1999/xlink">1-y</sub> buffer structure to overcome the lattice mismatch between Si...
III–V/Si multi‐junction solar cells are potential successors to the silicon single‐junction cell due their efficiency of up 40% in radiative limit. [1] Herein, latest results epitaxially integrated GaInP/GaAs/Si triple‐junction presented. To reduce parasitic absorption losses, which have limited current density Si bottom previous devices, transparent Al x Ga 1– As y P step‐graded metamorphic buffers investigated. Compared with GaAs buffers, transmittance is enhanced significantly, while no...
III-V compound semiconductors provide a high degree of flexibility in bandgap engineering and can be realized through epitaxial growth quality. This enables versatile spectral matching photovoltaic absorber materials as well the fabrication complex layer structures vertically stacked subcells tunnel junctions. work presents progress two fields applications photovoltaics: concentrator solar cells photonic power converters. We present latest results advancing energy conversion efficiencies to...
The integration of III-V compound semiconductors on a silicon bottom cell offers the opportunity to form two- and three-junction solar cells with conversion efficiency exceeding 30%. This paper reports progress in heteroepitaxial nucleation gallium phosphide (GaP) silicon, which allows fabrication front-surface passivation by thin single-crystalline GaP window layer. has low lattice-mismatch Si an indirect bandgap energy 2.26 eV, leads absorption. At same time, can be doped n-type contact In...
Abstract In this work, a concept of highly efficient solar–hydrogen generation by direct coupling III–V multijunction solar cells with proton exchange membrane (PEM) electrolysis is presented. under concentrated illumination feature voltages above 2 V enabling the hydrogen water electrolysis. The resulting “hydrogen concentrator” called HyCon. temperature‐dependent electrochemical behavior PEM cell analyzed and its current–voltage characteristics are distribution velocity flow pressure for...
Indium Phosphide (InP) plays a pivotal role in the semiconductor industry, particularly development of high-power, high-frequency optoelectronic devices that are essential for next-generation applications not only telecommunications, data centers, and photonic systems but also automotive technologies consumer electronics. Despite its advantages, widespread adoption InP-based is hindered by high costs limited throughput fabrication processes. To ensure competitiveness InP rapidly evolving...
We discuss benchmarking considerations for multi-junction solar fuel absorbers and investigate the effects of spectral shaping by catalyst nanoparticles on design criteria.
For the implementation of optoelectronic devices on silicon, which could be realized by a combination Si and direct-bandgap III/V semiconductors, defect free nucleation layer GaP is essential. This paper summarizes results structural investigations carried out transmission electron microscopy defects, can observed in films grown metal organic vapor phase epitaxy exactly oriented (001) substrates. Under optimized growth conditions anti domains (APDs), arise semiconductor at monoatomic steps...
Minority carrier diffusion lengths and lifetimes were determined for p-type Ga(1-x)InxAs with an In-content of 0 ≤ x 0.53 by cathodoluminescence time-resolved photoluminescence measurements respectively under low injection conditions; the resulting minority mobilities are also reported. Highly p-doped samples (3 × 1018 cm−3) demonstrate a constant length (5.0 ± 0.7) μm lifetime (3.7 ns up to 21%. Lower doped 1017 cm−3), on other hand, show increase in from (6.3 0.2) (6.2 0.5) GaAs (14 2)...
III-V multijunction solar cells grown on a Si cell are an attractive approach to reduce the cost of high-efficiency cells. When using wafer as active cell, it is crucial avoid degradation minority carrier lifetime in during metal-organic vapor phase epitaxy (MOVPE) process. After heating MOVPE reactor under H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> atmosphere, we observed strong its lifetime. By analyzing annealed samples with...
Hydrogen produced from solar energy has a high potential as storage medium to buffer the fluctuations of renewable sources. The direct combination concentrator photovoltaics with an electrolyzer capability produce sunlight at efficiency. For this, individual components have be adjusted carefully and optimized final system in mind. This paper focuses on cell development shows first results combined module electrolyzer. used for hydrogen production is metamorphic GaInP/GaInAs dual-junction...
The aim of this review paper is to summarize a decade research focused on enhancing metalorganic vapor-phase epitaxy (MOVPE) growth rates GaAs, driven by the imperative for most cost-effective and energy-efficient III–V compounds’ production. While MOVPE renowned producing high-quality devices, it has been constrained production cost. For example, was traditionally thought have moderate that limit throughput cost-intensive reactors. Recent endeavors, however, demonstrated ultrafast rates,...