Abstract III–V//Si multijunction solar cells offer a pathway to increase the power conversion efficiency beyond fundamental Auger limit of silicon single‐junctions. In this work, we demonstrate how two‐terminal wafer‐bonded triple‐junction cell is increased from 34.1 % 35.9 under an AM1.5g spectrum, by optimising III–V top structure. This highest reported date for silicon‐based technologies. improvement was accomplished two main factors. First, integration GaInAsP absorber in middle...

Abstract In this work, we present the fabrication and analysis of a wafer‐bonded GaInP/GaInAsP//Si triple‐junction solar cell with 36.1% conversion efficiency under AM1.5g spectral illumination. The new design presents an improvement over previous III‐V//Si cells by implementation rear‐heterojunction for middle cell. Furthermore, advanced metallodielectric rear‐side grating was used light trapping enhancement in silicon bottom that increased subcell current 1.4 mA/cm 2 . external radiative...

The terrestrial photovoltaic market is dominated by single‐junction silicon solar cell technology. However, there a fundamental efficiency limit at 29.4%. This overcome multijunction devices. Recently, GaInP/GaAs//Si wafer‐bonded triple‐junction two‐terminal device presented with 33.3% (AM1.5g) efficiency. Herein, it analyzed how this improved to reach conversion of 34.1%. By improving the current matching, an 35% (two terminals, AM1.5g) expected.

III-V compound semiconductors provide a high degree of flexibility in bandgap engineering and can be realized through epitaxial growth quality. This enables versatile spectral matching photovoltaic absorber materials as well the fabrication complex layer structures vertically stacked subcells tunnel junctions. work presents progress two fields applications photovoltaics: concentrator solar cells photonic power converters. We present latest results advancing energy conversion efficiencies to...

The photocurrent density-voltage (J(V)) curve is the fundamental characteristic to assess opto-electronic devices, in particular solar cells. However, it only yields information on performance integrated over entire active device area. Here, a method determine spatially resolved images by voltage-dependent photoluminescence microscopy derived from basic principles. opportunities and limitations of approach are studied investigation III-V perovskite This allows real-time assessment...

Monolithic perovskite-based triple junction solar cells have the potential to surpass power conversion efficiency (PCE) limits of single and dual-junction cells.

Multijunction solar cells provide a path to overcome the efficiency limits of standard silicon by harvesting broader range spectrum more efficiently. However, Si-based multijunction architectures are hindered incomplete in near-infrared (near-IR) spectral as Si subcells have weak absorption close band gap. Here, we introduce an integrated near-field/far-field light trapping scheme enhance silicon-based near-IR range. To achieve this, design nanopatterned diffractive silver back-reflector...

Abstract In this paper a method is presented to accurately and quickly interpolate dataset of the complex refractive index arbitrary compound semiconductors. The based on parameter morphing algorithm which maps critical points two endpoint materials with known optical sets onto each other. Every desired intermediate material composition can be interpolated if dependence band gap for given system. accuracy stability proposed procedure validated experimentally using spectral ellipsometry...

Abstract Low-cost approaches for mass production of III–V-based photovoltaics are highly desired today. For the first time, this work presents industrially relevant mask and plate front metallization solar cells replacing expensive photolithography. Metal contacts fabricated by nickel (Ni) electroplating directly onto cell’s using a precisely structured mask. Inkjet printing offers low-cost high-precision processing application an appropriate plating resist. It covers side with narrow...

This work focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction cells were grown epitaxially lattice matched GaAs wafers using metalorganic chemical vapor phase epitaxy (MOVPE). By optimizing growth temperature V/III ratio we could increase open-circuit voltage at target bandgap 1.50 eV by up to 100 mV. In future these results will be...

The Si tandem solar cells are very attractive for realizing high efficiency and low cost. This paper overviews current status of III-V/Si including our results. analytical results potential loss analysis bottom as well bandgap energy optimization sub-cells presented. 2-junction 3-junction have efficiencies 36% 42%, respectively. ERE (external radiative efficiency) is analyzed in order to clarify properties cells. Properties single-crystalline heterojunction cell fabricated this study were...

This article focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction cells were grown epitaxially lattice matched GaAs wafers using metalorganic vapor phase epitaxy. By optimizing growth temperature V/III ratio we could increase open-circuit voltage at target band gap 1.50 eV by up to 100 mV. In future these results will be implemented...

III-V/Si tandem solar cells are investigated as a promising solution to increase the power output of photovoltaic modules under terrestrial sunlight conditions. Over last years, we have developed wafer-bonded GaInP/AlGaAs//Si triple-junction cell with recently calibrated conversion efficiency 34.1% AM1.5g. This is highest any Si-based 2-terminal device and it shows potential this technology reach significantly higher performances than single-junction devices.

The reduction of the series resistance in multi‐junction solar cells is high importance for attaining peak efficiencies concentrator photovoltaics. This study showcases strategies to reduce sheet uppermost subcell a direct wafer bonded four–junction devices, since it contributes significantly resistance. Therefore, electron mobilities n–type AlGaInP, lattice matched GaAs, are investigated across bandgap energies between 1.9 and 2.1 eV various doping concentrations. resistances AlGaInP rear...

Integrated near-field/far-field light scattering design creates 36,1% efficient Si/III-V multijunction solar cellAndrea Cordaro a, Ralph Muller b, Stefan Tabernig Nico Tucher Patrick Schygulla Oliver Hohn Benedikt Blasi Albert Polman aa Center for Nanophotonics, AMOLF, Science Park, 104, Amsterdam, Netherlandsb Fraunhofer Institute Solar Energy Systems ISE, Germany.International Conference on Hybrid and Organic PhotovoltaicsProceedings of International Photovoltaics (HOPV24)València, Spain,...

As solar cells from direct semiconductors improve, i.e. become more radiative, luminescent coupling becomes and relevant. This has a strong impact on artifacts in EQE measurements of multi-junction cells, which e.g. is challenge, when characterizing III-V//Si cells. By measuring the response these under varying illumination conditions, this effect can be understood corrected.

Porous germanium multiple layer stacks were prepared using bipolar electrochemical etching. In dependance of the porosity within individual porous layers they can be used after a high temperature process either for III-V epitaxy and/or detachment. Both characteristics are crucial to result in thin detached multi-junction solar cell which substrate occupies about 600 nm or less. We observe strong correlation between detachment and surface roughness annealing. Finally an Al <inf...

Multi-junction solar cells provide a path to overcome the efficiency limits of standard silicon by harvesting more efficiently broader range spectrum. However, Si-based multi-junction architectures are hindered incomplete in near-infrared (near-IR) spectral range, as Si sub-cells have weak absorption close band gap. Here, we introduce an integrated near-field/far-field light trapping scheme enhance silicon-based near-IR range. To achieve this, design nanopatterned diffractive silver...

In this work we report on a procedure to increase the reproducibility of multi-junction solar cell growth. This is achieved by applying systematic offset room-temperature photoluminescence measurement match required band gap for obtaining current as simulated optical modelling. We found that difference in extracted from and external quantum efficiency respectively depends material system under investigation. With help procedure, modelled built 4-junction reaches power conversion 43.6 %...

We propose a novel approach for microscopically resolved photocurrent imaging. The method is based on the notion that electrical bias-dependent photoluminescence images reveal fundamental information charge extraction of photovoltaic devices. derived from basic physical principles and verified by means near-to-ideal III-V solar cell. It demonstrated special relevance liquid-processed perovskite cells. outline potential to investigate local efficiency, which can be related properties...