Markus Glatthaar

ORCID: 0000-0002-7501-2618
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About
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Research Areas
  • Silicon and Solar Cell Technologies
  • Thin-Film Transistor Technologies
  • Semiconductor materials and interfaces
  • Integrated Circuits and Semiconductor Failure Analysis
  • Organic Electronics and Photovoltaics
  • Silicon Nanostructures and Photoluminescence
  • Photovoltaic System Optimization Techniques
  • Conducting polymers and applications
  • solar cell performance optimization
  • Nanowire Synthesis and Applications
  • Chalcogenide Semiconductor Thin Films
  • Molecular Junctions and Nanostructures
  • Electronic Packaging and Soldering Technologies
  • Electron and X-Ray Spectroscopy Techniques
  • Perovskite Materials and Applications
  • Advanced Surface Polishing Techniques
  • Electrodeposition and Electroless Coatings
  • Laser Material Processing Techniques
  • Nanomaterials and Printing Technologies
  • Industrial Vision Systems and Defect Detection
  • Near-Field Optical Microscopy
  • 3D IC and TSV technologies
  • Electrohydrodynamics and Fluid Dynamics
  • Photonic and Optical Devices
  • Analytical Chemistry and Sensors

Fraunhofer Institute for Solar Energy Systems
2014-2023

Nelson Mandela University
2023

Fraunhofer Society
2004-2015

RENA Technologies (Germany)
2011

University of Freiburg
2005-2008

In this paper, the corrosion mechanism behind damp heat-induced degradation of screen-printed silver front-side contacts silicon solar cells due to presence acetic acid, which is known be a decomposition product most common module encapsulation material ethylene vinyl acetate, investigated. Scanning electron microscope (SEM) investigations and solder peel-tests show that interaction between acid results in significant adhesion loss metallization glass layer inside contacts. The application...

10.1109/jphotov.2015.2395146 article EN IEEE Journal of Photovoltaics 2015-03-05

Abstract Luminescence images of silicon solar cells contain information about local recombination properties and series resistance. It is difficult to separate the interpret single correctly quantitatively though, which greatly limits use luminescence images, in particular for application as an in‐production characterization tool. We therefore developed a fast method based on photoluminescence imaging spatially resolved coupled determination dark saturation current resistance (C‐DCR). (©...

10.1002/pssr.200903290 article EN physica status solidi (RRL) - Rapid Research Letters 2009-11-03

Abstract We introduce a fast and easy to apply method for determining the local series resistance of standard silicon solar cells. For this only two electroluminescence images taken at different voltages are needed. From these images, voltage current density through device can be calculated. Knowing parameters each pixel yields resistance. By calculating cell's dark saturation from lower image, also works with multicrystalline material. show acquired in 300 ms compare them other luminescence...

10.1002/pssr.200903175 article EN physica status solidi (RRL) - Rapid Research Letters 2009-06-29

In this paper we give a mathematical derivation of how luminescence images silicon solar cells can be calibrated to local junction voltage. We compare two different models extract spatially resolved physical cell parameters from voltage images. The first model is the terminal connected diode model, where each pixel regarded as with certain dark saturation current, which via series resistance terminal. This frequently used evaluate measurement data several techniques respect resistance....

10.1063/1.3443438 article EN Journal of Applied Physics 2010-07-01

Aerosol jet printing is a technology for contactless of narrow line shaped features down to width about 20 μm. Until now, process optimization was only done empirically because there no manageable model describe it. The modeled numerically regarding Stokes and Saffman force on the aerosol particles. In this article, we introduce simple analytical predict printed width. Experimentally, show that valid approach wide range parameters. A close look quality lines reveals depending parameters...

10.1080/02786826.2014.940439 article EN Aerosol Science and Technology 2014-08-12

Abstract After completion of the solar cell manufacturing process current–density versus voltage curves ( J U ) curves) are measured to determine cell's efficiency and mechanisms limiting efficiency. An accurate robust analysis is essential. In this work it shown that fitting two‐diode model inappropriate quantify recombination in space charge region ohmic losses due series resistance. Three fill factors, namely factor illuminated curve, pseudo suns V oc curve ideal single diode model, base...

10.1002/pip.979 article EN Progress in Photovoltaics Research and Applications 2010-07-14

We present a novel method to determine spatially resolved the dark saturation current of standard silicon solar cells. For this two electroluminescence images are taken at different voltages. From these images, first spatial voltage distribution can be calculated. Second by applying Laplacian image from Ohm’s law and continuity equation, through device certain position determined. Knowing local device, voltage, emitter sheet resistance allows current. The clue is cope with noise using an...

10.1063/1.3132827 article EN Journal of Applied Physics 2009-06-01

Abstract We measured the electrical impedance spectra of organic bulk‐heterojunction solar cells based on an absorber blend poly(3‐hexylthiophene) and [6,6]‐phenyl C 61 ‐butyric acid methyl ester. Comparing non‐treated device after two consecutive treatments with applied forward bias voltage at 110 °C, we observed a region in semiconductor low conductivity, which was expanding treatments. concluded that this is depletion aluminium contact. This confirmed by dependence spectra. (© 2005...

10.1002/pssa.200521149 article EN physica status solidi (a) 2005-08-16

We present a detailed study on alloying from screen-printed aluminum pastes containing boron additives (Al-B pastes) to further enhance the efficiency of p- and n-type silicon solar cells with an Al-alloyed back-surface field rear emitter, respectively. Due high B solubility in Si, additional incorporation atoms as acceptors into p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> region-referred Al-B codoping Si-provides improved...

10.1109/jphotov.2012.2217113 article EN IEEE Journal of Photovoltaics 2012-10-01

The metallization of silicon heterojunction (SHJ) solar cells by electroplating highly conductive copper onto a multifunctional patterned metal layer stack is demonstrated. approach features several advantages: low temperature processing, high conductivity plated copper, no organic making, and material costs (almost Ag‐free). A PVD aluminum deposited the cell subsequently to TCO deposition. with printed etchant its native oxide on remaining areas inhibits plating. full area while supports...

10.1002/solr.201900006 article EN Solar RRL 2019-03-27

Abstract In this paper we present a high throughput testing setup for organic solar cells that is necessary an efficient analysis of their behaviour. The comprises process parameter logging, automated measurement data acquisition and subsequent management analysis. Utilising the reproducibility effect production variations has been tested with set 360 based on poly‐3‐hexylthiophene:1‐(3‐methoxycarbonyl)‐propyl‐1‐1‐phenyl‐(6,6)C 61 bulk heterojunction. Variations in power conversion...

10.1002/pip.836 article EN Progress in Photovoltaics Research and Applications 2008-07-10

Screen printed silver thick film contacts on the front side of industrial silicon solar cells induce parasitic impurities due to diffusion processes during high-temperature contact formation process. This leads space charge region recombination (SCR-recombination) corresponding efficiency-limiting dark saturation current densities j02. The quantitative determination j02 via fitting two diode model IV curve cell is subject errors as result for strongly depends individual parameters like...

10.1016/j.egypro.2011.06.203 article EN Energy Procedia 2011-01-01
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