A5001705871- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Neuroscience and Neural Engineering
- CCD and CMOS Imaging Sensors
National Yang Ming Chiao Tung University
2016-2023
We investigated electric field-induced trapped electron lateral migration in a SONOS flash cell. The threshold voltage shift (ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> ) and gate-induceddrain leakage (GIDL) current were measured to monitor nitride movement retention. applied different voltages the gate source/drain retention vary vertical fields. Our study shows that: 1) GIDL can be used charge 2) exhibits strong dependence on...
The relationship between SET-state current level and read-disturb failure time in a tungsten oxide RRAM is characterized modeled. Our result shows that read voltage-induced reduction of oxygen vacancy density follows power law dependence on cumulative time. factor independent level. Read-disturb considerably improved by several orders magnitude as increases few times. An analytical model to correlate proposed. Since related cross-section conductive filament an oxide, our developed based area...
We characterize SET-state current degradation induced by read operations in a tungsten oxide resistive memory cell. The exhibits two-stage evolution. In the second stage, decline follows inverse power-law dependence on cumulative read-disturb time. present an analytical model to derive power law. Our includes oxygen ion activation, mobile hopping, and reduction of vacancy density re-oxidation. Voltage temperature effects read-disturb-induced are characterized for comparison with model....
Data pattern effects on nitride charge lateral migration and V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf> retention loss in a trap flash memory is investigated. We use channel hot electron program band-to-band tunneling hole erase to inject different amounts of electrons holes at the two sides SONOS cell. An interface oxide near an injected packet its associated random telegraph signal (RTS) are used as internal probe detect local...
A SET-state conductance change in a hafnium-oxide resistive switching memory cell due to repeated read events is investigated. We characterize read-induced at different voltages and levels. Our result shows that the degradation exhibits two-stage evolution with pulse number. decreases slightly first stage then follows inverse power-law dependence on number second stage. The power factor an exponential function of voltage without regard level, transition two stages related level. An...
We characterize SET/RESET cycling effects on read-disturb failure time in the low resistance state (LRS) of a hafnium-oxide resistive memory cell. find that degrades by orders magnitude after cycling. An analytical LRS model including induced trap generation rate and its influence characteristics is developed. compare our with measured results wide range read voltage cycle number. Good agreement between modeled measurement obtained. evaluate post-cycling cells for different criteria.
We establish a one-dimensional transient simulation to study trapped hole lateral migration in the silicon nitride of silicon-oxide-nitride-oxide-silicon (SONOS) flash memory cell. In our model, traps have continuous energy distribution. Trapped emissions valence band nitride, free recapture into traps, and drift-diffusion valance are included simulation. Two major emission processes, thermally assisted tunneling (ThAT) Frenkel-Poole considered. simulate SONOS cell with program electrons...