Gyeongtak Han

ORCID: 0000-0002-9483-1504
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About
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Research Areas
  • Graphene research and applications
  • 2D Materials and Applications
  • Magnetic and transport properties of perovskites and related materials
  • Multiferroics and related materials
  • Advanced Memory and Neural Computing
  • Electronic and Structural Properties of Oxides
  • Ferroelectric and Piezoelectric Materials
  • MXene and MAX Phase Materials
  • Semiconductor materials and devices
  • Advanced Thermoelectric Materials and Devices
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Condensed Matter Physics
  • Smart Grid and Power Systems
  • Electrochemical Analysis and Applications
  • Thermal properties of materials
  • Advanced Battery Materials and Technologies
  • Photorefractive and Nonlinear Optics
  • Chalcogenide Semiconductor Thin Films
  • Topological Materials and Phenomena
  • Advanced Battery Technologies Research
  • Characterization and Applications of Magnetic Nanoparticles
  • Advanced X-ray and CT Imaging
  • Heusler alloys: electronic and magnetic properties
  • Power Systems and Technologies
  • TiO2 Photocatalysis and Solar Cells

Sungkyunkwan University
2018-2024

Ulsan National Institute of Science and Technology
2021

Suwon Research Institute
2020

Government of the Republic of Korea
2020

Institute for Basic Science
2020

Abstract The large-scale crossbar array is a promising architecture for hardware-amenable energy efficient three-dimensional memory and neuromorphic computing systems. While accessing cell with negligible sneak currents remains fundamental issue in the architecture, up-to-date cells arrays suffer from process device integration (one selector one resistor) or destructive read operation (complementary resistive switching). Here, we introduce self-selective based on hexagonal boron nitride...

10.1038/s41467-019-11187-9 article EN cc-by Nature Communications 2019-07-18

Vertically stacked two-dimensional van der Waals (vdW) heterostructures, used to obtain homogeneity and band steepness at interfaces, exhibit promising performance for band-to-band tunneling (BTBT) devices. Esaki tunnel diodes based on vdW however, yield poor current density peak-to-valley ratio, inferior those of three-dimensional materials. Here, we report the negative differential resistance (NDR) behavior in a WSe2/SnSe2 heterostructure system room temperature demonstrate that...

10.1021/acsnano.9b03342 article EN ACS Nano 2019-07-01

Abstract Growth of 2D van der Waals layered single‐crystal (SC) films is highly desired not only to manifest the intrinsic physical and chemical properties materials, but also enable development unprecedented devices for industrial applications. While wafer‐scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform diatomic transition metal dichalcogenide (TMdC) established date. Here, TMdC monolayers on a centimeter scale via atomic sawtooth gold surface as...

10.1002/adma.202006601 article EN Advanced Materials 2021-03-10

An effective approach to alleviate the volume expansion of alloying material and magnify capacity sodium-ions batteries anode by anchoring SnS nanoparticles densely on porous carbon nanotubes film.

10.1039/c9ta13136a article EN Journal of Materials Chemistry A 2020-01-01

Water- and acid-stable electride realizes a sustainable electrocatalytic reaction as an efficient solid-state electron source.

10.1126/sciadv.aba7416 article EN cc-by-nc Science Advances 2020-06-05

Abstract Bonding geometry engineering of metal–oxygen octahedra is a facile way tailoring various functional properties transition metal oxides. Several approaches, including epitaxial strain, thickness, and stoichiometry control, have been proposed to efficiently tune the rotation tilt octahedra, but these approaches are inevitably accompanied by unnecessary structural modifications such as changes in thin‐film lattice parameters. In this study, method selectively engineer octahedral...

10.1002/advs.202001643 article EN cc-by Advanced Science 2020-06-25

Oxide interface orientation tunes ferroelectric distortion and antiferrodistortive rotation into competition or cooperation.

10.1126/sciadv.abe9053 article EN cc-by-nc Science Advances 2021-04-21

Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here, we investigate the impact of dimensionality epitaxially-grown oxides down to monolayer limit structural, magnetic, and orbital anisotropies. By designing oxide superlattices with a ferromagnetic SrRuO3 nonmagnetic SrTiO3 layers, observed modulated behavior change...

10.1021/acs.nanolett.4c01536 article EN Nano Letters 2024-06-03

Two-dimensional (2D) van der Waals (vdW) heterostructures exhibit novel physical and chemical properties, allowing the development of unprecedented electronic, optical, electrochemical devices. However, construction wafer-scale vdW for practical applications is still limited due to lack well-established growth transfer techniques. Herein, we report a method fabrication 2D with an ultraclean interface between layers via aid freestanding viscoelastic polymer support layer (VEPSL). The low...

10.1021/acsami.8b16261 article EN ACS Applied Materials & Interfaces 2018-12-10

Abstract The functionalities and diverse metastable phases of multiferroic BiFeO 3 (BFO) thin films depend on the misfit strain. Although mixed phase-induced strain relaxation in multiphase BFO is well known, it unclear whether a single-crystalline film can accommodate without involvement its polymorphs. Thus, understanding behavior key to elucidating lattice strain–property relationship. In this study, correlative analysis based dark-field inline electron holography (DIH) quantitative...

10.1088/1674-1056/ad62e0 article EN Chinese Physics B 2024-07-15

Herein, we report on a novel method for transferring two-dimensional (2D) materials grown Au substrates using sulfur intercalation between the 2D and surfaces.The strong nature of S-Au bond allows atoms into their interface, under sulfurrich atmosphere, at 600 ∘ C. The relaxed interfacial interaction achieved via is carefully confirmed by recovering phonon mode work function tungsten disulfide (WS 2 ) in Raman spectra Kelvin probe force microscopy, and, more importantly, observing expansion...

10.5757/asct.2021.30.2.45 article EN Applied Science and Convergence Technology 2021-03-31

Distribution system in Korea consists of a central control unit (T-DSA), communication and FRTU (Feeder Remote Terminal Unit) to monitor on-site switches circuit breakers real time. This configuration is called distribution automation the divided into overhead lines underground operation. The installed field measures voltage current system, receives information on status transmits it upper (T-DAS). In addition, with measured values, possible determine failure performs section operation power...

10.1049/icp.2023.0921 article EN IET conference proceedings. 2023-07-04

Journal Article Atomic and Electronic Reconstruction at the a-LAO/STO Interface by E-Beam Induced Crystallization Get access Gwangyeob Lee, Lee Advanced Analysis Center, Korea Institute of Science Technology, Seoul, South KoreaDepartment Materials Engineering, Yonsei University, Search for other works this author on: Oxford Academic Google Scholar Shin-ik Kim, Kim Research Gyeongtak Han, Han Department Energy Science, Sungkyunkwan Suwon, Young-Min KoreaIBS Center Integrated Nanostructure...

10.1017/s1431927619010201 article EN Microscopy and Microanalysis 2019-08-01

2019 International Conference on Solid State Devices and Materials ,High Performance Three-Terminal Synaptic Transistor based Ferroelectric Hf<sub>0.5</sub>Zr <sub>0.5</sub>O<sub>2</sub>/Tungsten Disulfide for Neuromorphic Computing

10.7567/ssdm.2019.d-4-03 article EN Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials 2019-09-04

Growth of two-dimensional van der Waals layered single-crystal (SC) films is highly desired to manifest intrinsic material sciences and unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform diatomic transition metal dichalcogenide (TMdC) not established date. Here, we report the TMdC monolayers in a centimeter scale via atomic sawtooth gold surface as universal template. Atomic tooth-gullet...

10.48550/arxiv.2010.10097 preprint EN other-oa arXiv (Cornell University) 2020-01-01
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