Hydrogenated silicon suboxides, ${\mathrm{SiO}}_{\mathrm{r}}$:H, for alloy range (0<r<2) have been deposited by remote plasma-enhanced chemical vapor deposition (remote PECVD) under conditions in which hydrogen is incorporated predominantly monohydride or SiH bonding configurations. We investigated both the bond-stretching and bond-bending absorption bands infrared (ir) spectroscopy as a function of r, composition. In this paper, we focused on bands, modeled shape band There are four...

We have grown thin films of silicon nitride by remote plasma-enhanced chemical-vapor deposition and studied the chemical bonding infrared absorption, x-ray photoelectron spectroscopy, Rutherford backscattering, Auger-electron spectroscopy. Films were using two different gases as source nitrogen, ${\mathrm{N}}_{2}$ ${\mathrm{NH}}_{3}$. found that from deposited at substrate temperatures in excess 350 \ifmmode^\circ\else\textdegree\fi{}C a composition corresponding to stoichiometric...

We investigate why high levels of hydrogen dilution the process gas lead to enhanced light soaking stability amorphous silicon (a-Si) alloy solar cells by studying microstructural properties material using high-resolution transmission electron microscopy (TEM) and Raman spectroscopy. The TEM results show that a-Si (with or without dilution) is a heterogeneous mixture network linear-like objects evidence order along their length. volume fraction these ordered regions increases with increasing...

We have developed a low temperature process for the deposition of thin films silicon dioxide and nitride. The consists four steps: (a) excitation an oxygen or nitrogen-containing molecule in RF plasma; (b) transport excited nitrogen species out plasma region; (c) mixing transported with silane (or disilane) region to form precursor species; (d) CVD reaction at heated substrate desired film. call this remote enhanced (RPECVD). Silicon rich oxide been grown temperatures (Ts) between 100 350 °C...

We have deposited thin films of SiO2 by remote plasma-enhanced chemical vapor deposition and identified similar infrared (IR) spectroscopic signatures Si–OH groups incorporated during either film growth, or the cooling down process in chamber. These can also be hygroscopic and, on postdeposition exposure to atmospheric water vapor, they show changes IR spectra associated with incorporation additional groups. are (i) development a new symmetric feature, centered at about 3350 cm−1, within...

Films of silicon oxide, nitride, and oxynitride produced by direct plasma enhanced chemical vapor deposition (DPECVD) utilizing silane as one the gas phase reactants generally contain up to ten times more bonded hydrogen than films remote PECVD (RPECVD) deposited at same substrate temperature (Ts). We attribute this difference way is utilized in process chemistry. In DPECVD, excited along with other reactant gases, resulting formation radicals molecular fragments, e.g., SiH3 SiH2, which low...

We have deposited thin films of silicon oxynitride (SiO2)x(Si3N4)(1−x) by remote plasma enhanced chemical vapor deposition infrared (IR) absorption, Auger electron spectroscopy (AES), and ellipsometry. The dominant IR stretching band feature shifts approximately linearly with frequency between the frequencies end member compounds as such is a very good secondary standard for determination alloy composition. This behavior also indicative homogeneous alloy, rather than two-phase mixture. used...

We have deposited silicon nitride (Si3N4) and oxide (SiO2) thin films using remote plasma enhanced chemical vapor deposition (RPECVD). characterized the composition of by infrared absorption (IR), x-ray photoelectron spectroscopy (XPS), Auger electron (AES), Rutherford backscattering (RBS), studied electrical properties in metal insulator semiconductor (MIS) device configurations. configured system adjusted gas flow rates order to minimize: (a) O contamination Si3N4 films; (b) OH groups SiO2...

We have studied selected structure-dependent properties of thin films SiO2 prepared by remote plasma-enhanced chemical vapor deposition (remote PECVD) and thermal oxidation crystalline silicon, identified process-dependent differences in their local atomic structures. determined the frequency ν linewidth Δν Si–O bond-stretching infrared-active vibration near 1075 cm−1, found that all relatively thick oxide films, t&amp;gt;1000 Å, either these two techniques display same linear relationship...

We discuss the deposition of silicon nitride (Si3N4) and diimide [Si(NH)2] thin films by remote plasma enhanced chemical vapor (RPECVD). show that use two different nitrogen source gases N2 NH3 leads to qualitatively local bonding in deposited films. present studies as a function substrate temperature (Ts) dilution containing species with rare Ar He. diluting He factor about 10 1 increases growth rate for film formation more than 3. Dilution He, reduces also amount bonded hydrogen.

The surfaces of silicon oxide, nitride, and oxynitride thin films are susceptible to damage by energetic ion electron beams so that caution must be exercised in studies the chemical bonding via Auger spectroscopy (AES), x-ray photoelectron spectroscopy, energy-loss spectroscopy; this paper we focus on AES spectra. Induced is readily evident generation a satellite structure Si LVV spectrum results from creation Si–Si bonds within surface region dielectric film. We have empirically determined...

This paper will present mass spectrometric and optical emission spectroscopic studies of the deposition process amorphous hydrogenated silicon (a-Si:H) dioxide (SiO2) by remote plasma-enhanced chemical vapor (remote PECVD). We have established that silane reactant, which is not directly exposed to a rf plasma in either processes, fragmented or chemically combined gas phase. Specifically there no evidence for formation disilane, Si2H6, siloxanes silanols phase, as direct PECVD process. In...

Chemical vapor deposition of SiO2 is often thought as an innocuous process by which insulating layer can be formed without affecting the underlying substrate. Here evidence presented indicates that a subcutaneous oxidation takes place during remote plasma enhanced chemical oxidizes few monolayers This evidenced most directly electrical measurements on metal–insulator semiconductor (MIS) structures fabricated Ge and GaAs materials. These MIS utilize thin Si interlayer between to form...

We have observed that in the low-temperature deposition of thin films SiO2 onto semiconductor surfaces by remote plasma enhanced chemical vapor deposition, oxidation occurs at semiconductor–SiO2 interface. This subcutaneous process generates a film native oxide, which can then play significant role determining electrical properties semiconductor/oxide The oxide formed on Si is SiO2, and we determined growth this does not interfere with formation device quality interfaces provided thickness...

A multichamber system specifically designed for growing Si-based dielectric films on processed and characterized semiconductor surfaces is described. The consists of a surface preparation chamber, an in situ analysis deposition two load-lock sample introduction chambers. Device quality silicon dioxide thin have been grown Si substrates. electrical structural properties these are discussed.

Hydrogen $({\mathrm{H}}_{2})$ dilution of the source gas is known to be a key factor in producing hydrogenated amorphous silicon films that demonstrate high degree optoelectronic stability. In this work, we investigate, using Raman spectroscopy and high-resolution transmission electron microscopy (TEM), whether microstructural differences exist between such those made with no ${\mathrm{H}}_{2}$ (i.e., have greater instabilities). The variable dilution, which ranges from none very levels,...

We have analyzed He, O2 /He, and N2 /He plasmas of the remote plasma enhanced chemical vapor deposition a-Si:H, silicon oxide, nitride by emission optical spectroscopy mass spectrometry. detected species such as atomic N O well metastable He. These will be discussed relative to nitrides, oxides, amorphous silicon.

Phase change rewritable optical recording media contain a chalcogenide layer, e.g., GexSbyTez, that undergoes transition between the amorphous and crystalline phases (by absorption of laser energy). Differences in their constants [n,k] result reflectivity differences multilayer devices. We have obtained those by reflection transmission [R,T] intensity measurements (200⩽λ⩽2000 nm) at (near) normal incidence for films &amp;lt;50 nm thick. The film’s are each wavelength direct numerical...

By using direct numerical-solution techniques for the reflectance (R) and transmittance (T) equations of a multilayer structure, we have analyzed infrared R T measurements on heavily doped p-type GaAs:C films grown by molecular beam epitaxy. The optical properties, with hole concentrations up to 1.4×1020 cm−3, were determined photon energies from 0.07 0.6 eV, in which region plasmon (intraband) intervalenceband contributions are competition. Our results absorption coefficient resolve two...

We have grown films of a-Si:H by remote plasma enhanced chemical vapor deposition (RPECVD) with substrate temperatures Ts between 38 and 400 °C studied the infrared optical absorbance (including sub-band-gap absorbance), other photoelectronic properties. The RPECVD differ from glow discharge (GD) sputtered films, most notably in dependence hydrogen bonding environments (SiH, SiH2, etc.) photoconductivity. produced Ts=235 are similar to ‘‘device grade’’ GD films. Based on differences these we...