A5046550360- Magnetic properties of thin films
- Copper Interconnects and Reliability
- Magnetic Properties and Applications
- Semiconductor materials and devices
- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Surface and Thin Film Phenomena
- Quantum and electron transport phenomena
- Ferroelectric and Negative Capacitance Devices
- Magnetic and transport properties of perovskites and related materials
- Magnetic Properties of Alloys
- Graphene research and applications
- Metallic Glasses and Amorphous Alloys
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Condensed Matter Physics
- Microstructure and mechanical properties
- Physics of Superconductivity and Magnetism
- Advanced Memory and Neural Computing
- Electronic and Structural Properties of Oxides
- Metal and Thin Film Mechanics
- Adhesion, Friction, and Surface Interactions
- Topological Materials and Phenomena
- Ferroelectric and Piezoelectric Materials
- Magnetic Field Sensors Techniques
- Theoretical and Computational Physics
Institute of Materials Research and Engineering
2024
Agency for Science, Technology and Research
2024
National University of Singapore
2015-2021
Nanyang Technological University
2016
We report on the efficient spin-orbit torque (SOT) switching in a single ferromagnetic layer induced by new type of inversion asymmetry, composition gradient. The SOT 6- to 60-nm epitaxial FePt thin films with $L{1}_{0}$ phase is investigated. magnetization can be reversibly switched applying electrical current moderate density. Different from previously reported SOTs which either decreases or does not change film thickness, increases thickness. found attributed gradient along normal...
Collinear IrMn offers new opportunities for future magnetic memory design as it can be an effective source of spin-orbit torque.
Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO with the orthorhombic phase obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner piezoresponse force microscopy. However, defects such as oxygen vacancies caused to become leaky. observed ferroelectricity semiconducting...
(Anti-)ferroelectricity in complementary metal-oxide-semiconductor (CMOS)-compatible binary oxides have attracted considerable research interest recently. Here, we show that by using substrate-induced strain, the orthorhombic phase and desired ferroelectricity could be achieved ZrO2 thin films. Our theoretical analyses suggest strain imposed on (111) film TiN/MgO (001) substrate would energetically favor tetragonal (t) (o) phases over monoclinic (m) of ZrO2, compressive along certain ⟨11-2⟩...
Abstract The structure, magnetic and thermal properties of (FePt 0.78 –C 0.22 )–BN granular films with various BN volume concentrations are systematically studied. Compared to the FePt–C film without doping, grain size distribution FePt grains is reduced by 50% component 10 vol.%, coercivity intrinsic switching field distributions increased 3 times narrowed 35%, respectively, when 6 vol.%. improvement in attributed enhanced chemical ordering L1 0 phase. Based on ω method, it found that...
The binary alloys with heavy elements have been considered promising candidates for spin-orbit torque application due to the tunable spin Hall effect. In light of previous studies, effect crystalline structure on in nonmagnetic has not thoroughly studied. Here, we present a systematic investigation torques chemically disordered $\mathrm{C}{\mathrm{u}}_{100\text{\ensuremath{-}}x}\mathrm{P}{\mathrm{t}}_{x}$ and...
Columnar (001) FePt-ZrO2-C films with large coercivity, small grain size, and high aspect ratio were obtained. By doping ZrO2 into FePt film at sputtering temperature, tetragonal (002) textured was formed distributed the boundaries of grains, resulting in formation columnar structured films. The perpendicular anisotropy degraded since some (200) grains directly on ZrO2. With a amount carbon FePt-ZrO2 35 vol. % films, improved. However, still interconnected. Upon further increasing...
Size control of nanocrystals is becoming more crucial in growing, for example, granular ferromagnetic thin films heat-assisted magnetic recording, or self-assembled quantum dots computing. This study identifies patterns with surprisingly ``quantized'' feature sizes Fe-Pt film grown on lattice-mismatched MgO. arises from the periodic nature misfit-strain energy such a system; island lengths that are integer multiples misfit dislocation period energetically favored. These results point to...
The microstructure and magnetic properties of the FePt films grown on large mismatched ZrN (15.7%) intermediate layer were investigated. With using layer, 10 nm exhibited (001) texture except for some weaker (110) texture. Good epitaxial relationships <100>//ZrN <100>//TiN <100> among ZrN/TiN revealed from transmission electron microscopy (TEM) results. As compared with TiN although FePt-SiO2-C showed isotropic properties, interfacial energy lattice mismatch between would lead to form...
L10 ordered alloys are ideal models for studying the anomalous Hall effect (AHE), which can be used to distinguish origin from intrinsic (from band structure) or extrinsic effects impurity scatterings). In bulk limit of FePt films, AHE is considered dominated by contribution, mainly comes strong spin–orbit interaction (SOI) Pt atoms and exchange-splitting Fe atoms. The study conductivity (AHC) L10-FePt thin films particular interest its application in spintronic devices. order reduce defects...
This study investigates the destructive breakdown (DBD) phenomenon in van der Waals gate dielectric 2D muscovite mica (4–12 nm thick), focusing on its electrical reliability as a material. Capacitor test structures were electrically stressed, and resulting impact physical structure was analyzed using atomic force microscopy. The volume of material removed DBD event is found, energy required (Ereq) to vaporize calculated. It found that Ereq proportional average dissipated capacitor during...
In order to achieve the application of FePt based films, great progresses have been made in fabrication granular thin films using MgO or TiN underlayer/intermediate layers. However, intermediate layer possessing small surface energy led large opening-up in-plane hysteresis loop while caused formation semi-spherical grains with big grain size and poor isolation. solve these problems, we proposed a new layer- TiN-MgO. As compared layer, TiN-MgO had smaller larger interfacial energy, thus...