A5100452765- Magnetic properties of thin films
- Multiferroics and related materials
- Magnetic and transport properties of perovskites and related materials
- Ferroelectric and Piezoelectric Materials
- Advanced Condensed Matter Physics
- Advanced Memory and Neural Computing
- Metamaterials and Metasurfaces Applications
- Electromagnetic wave absorption materials
- Advanced Antenna and Metasurface Technologies
- Electronic and Structural Properties of Oxides
- Magnetic Properties and Applications
- Physics of Superconductivity and Magnetism
- Ferroelectric and Negative Capacitance Devices
- Metallic Glasses and Amorphous Alloys
- Magnetic Properties of Alloys
- Copper Interconnects and Reliability
- Lipid metabolism and biosynthesis
- Neuroscience and Neural Engineering
- Magneto-Optical Properties and Applications
- Endoplasmic Reticulum Stress and Disease
- Electromagnetic Compatibility and Noise Suppression
- Topological Materials and Phenomena
- Theoretical and Computational Physics
- Nonlocal and gradient elasticity in micro/nano structures
- Quantum and electron transport phenomena
Chinese Academy of Sciences
2010-2024
National University of Singapore
2009-2023
International Centre for Materials Physics
2010-2014
Dual dielectric relaxation of the permittivity and multiple magnetic resonances permeability (including one natural resonance two exchange modes) are observed in CoNi@C nanocapsules same 5–17 GHz frequency range which leads to a better electromagnetic-wave absorption than earlier reported for nanocomposites. A reflection loss (RL) exceeding −25 dB is obtained wide when an appropriate absorber thickness between 2 4.8 mm chosen. For layer, RL value −10 achieved broad 12–18 GHz, covers whole Ku-band.
Electromagnetic-wave (EMW) absorption by Ni/C nanocapsules with similar permeability but different permittivity mainly due to differences in the graphite-shell thickness has been investigated. The optimal working frequency could appear at S-band and C-band considerable strong EMW was achieved. For nanocapsules, a reflection loss exceeding −20 dB reached from 2.6 8.2 GHz maximum value of −40 3 GHz. improved can be attributed an electromagnetic match enhanced dipole polarization upon...
LDs (lipid droplets) are cellular organelles which can be found in nearly all eukaryotic cells. Despite their importance cell biology, the mechanism underlying LD biogenesis remains largely unknown. In present study we report that conditions of ER (endoplasmic reticulum) stress stimulate formation Saccharomyces cerevisiae. We accumulated yeast mutants with compromised protein glycosylation or ER-associated degradation. Moreover, tunicamycin and Brefeldin A, agents induce stress, were to...
Brain-inspired computing is an emerging field, which intends to extend the capabilities of information technology beyond digital logic. The progress field relies on artificial synaptic devices as building block for brainlike systems. Here, we report electronic synapse based a ferroelectric tunnel memristor, where its plasticity learning property can be controlled by nanoscale interface engineering. effect engineering device performance was studied. Different memristor interfaces lead...
We report on the efficient spin-orbit torque (SOT) switching in a single ferromagnetic layer induced by new type of inversion asymmetry, composition gradient. The SOT 6- to 60-nm epitaxial FePt thin films with $L{1}_{0}$ phase is investigated. magnetization can be reversibly switched applying electrical current moderate density. Different from previously reported SOTs which either decreases or does not change film thickness, increases thickness. found attributed gradient along normal...
Spin–orbit torque provides a highly efficient way to achieve current-induced magnetization switching, which relies on charge-to-spin conversion of the spin source layer. However, in conventional heavy metal/ferromagnetic layer, generated spin–orbit is limited in-plane, cannot deterministically switch perpendicularly magnetized ferromagnets, and thus impedes practical application for high-density magnetic memory. In this work, deterministic switching perpendicular achieved SrRuO3/WTe2 bilayer...
BaTiO3 thin films' self-polarization can be tuned upward or downward, depending on both the substrate termination and flexoelectric effect upon varying its thickness. Different atomic stacking sequence leads to different direction of fully strained films, whereas internal electric field produced by becomes dominating factor in determining relaxed films. As a service our authors readers, this journal provides supporting information supplied authors. Such materials are peer reviewed may...
Abstract The magnetic Weyl fermion originates from the time reversal symmetry (TRS)‐breaking in crystalline structures, where topology and magnetism entangle with each other. Therefore, is expected to be effectively tuned by field electrical field, which holds promise for future topologically protected electronics. However, control of has rarely been reported, prevented limited number identified solids. Here, electric demonstrated an epitaxial SrRuO 3 (111) thin film. films indicated chiral...
The dielectric resonance and multiple magnetic resonances which correspond to microwave absorptions in the 2–18 GHz range have been studied composite Fe/TiO2. Fe grain size is found great impact on this metal-semiconductor composite. polarization mechanism attributed interfacial polarization. can be ascribed natural exchange resonances, explained by Aharoni’s theory.
Resonant excitations of confined systems have aroused much attention because their potential application in future microwave devices and spintronics. Under resonant excitations, the motion topo-logical objects exhibits circular, elliptical or even stadium-like dynamics. However, more complex non-linear topological seldom been reported associated physical mechanism remains unclear. Here, we present an observation flower-like for coupled skyrmions Co/Ru/Co nanodisks activated by a...
Abstract Topologically protected magnetic states have a variety of potential applications in future spintronics owing to their nanoscale size (<100 nm) and unique dynamics. These fascinating states, however, usually are located at the interfaces or surfaces ultrathin systems due short interaction range Dzyaloshinskii–Moriya (DMI). Here, topological 40‐unit cells (16 SrRuO 3 layer successfully created via an interlayer exchange coupling mechanism interfacial DMI. By controlling thickness...
The oxide ferromagnet ${\mathrm{La}}_{0.67}{\mathrm{Sr}}_{0.33}\mathrm{Mn}{\mathrm{O}}_{3}$ (LSMO) possesses low saturation magnetization $({M}_{s})$, a magnetic damping constant $(\ensuremath{\alpha})$, and high carrier spin polarization, which promise superior functionalities in spintronics devices. For applications, these devices are to be integrated into electronic circuits, require the control of LSMO by electrical means. However, reliable switching method remains largely unexplored....
Complex oxide thin-film heterostructures often exhibit magnetic properties different from those known for bulk constituents. This is due to the altered local structural and electronic environment at interfaces, which affects exchange coupling ordering. The emergent magnetism interfaces can be controlled by ferroelectric polarization has a strong effect on spin-dependent transport of heterostructures, including tunnel junctions. Here, using prototype La2/3Sr1/3MnO3/BaTiO3 we demonstrate that...
We report the effect of top electrode/functional layer interface on performance ferroelectric tunnel junctions. Ex situ and in fabrication process were used to fabricate Pt electrode. With ex process, one passive at would be induced. Our experimental results show that devices increases coercive voltage functional BaTiO3 decreases tunneling current magnitude. However, possess more than 1000 times larger ON/OFF ratios with same size
Current-induced effective magnetic fields offer a new pathway through spin orbit interaction (SOI) to switch magnetization and have recently attracted great interest. In the conventional heavy metal/ferromagnetic metal/oxide (HM/FM/Oxide) structure, significant efforts been made study role of HM in determining fields. However, very little attention has paid oxide layer its interface with FM, where Rashba effect may affect field. this report, we present tune field by engineering hybrid...
Abstract Current‐induced magnetization switching via spin‐orbit torque (SOT) holds great potential for applications in high‐speed and energy‐efficient magnetic memory logic devices. In the extensively studied heavy metal/ferromagnet (HM/FM) SOT heterostructures, thickness of FM layer is typically restricted to a few nanometers or less due rapid spin dephasing, making it challenging implement thermally stable cells with high density. this study, demonstrated that constraint can be...
Abstract Spin‐orbit coupling refers to the relativistic interaction between spin and orbital motions of electrons. This leads numerous intriguing phenomena, including spin‐orbit torques, spin–momentum locking, topological textures, etc., that have recently gained prominence in field spin‐orbitronics. In particular, emerging ferroelectric control is recognized validated as an effective means enhance energy efficiency across a broad spectrum spin‐orbitronic devices. Here, cutting‐edge research...
Tunneling electroresistance (TER) effect has been observed in high quality ultrathin BiFeO3 thin films. The growth of the films was confirmed using synchrotron resolution X-ray diffraction techniques as well high-resolution transmission electron microscopy. Ferroelectric-based resistive switching behavior is down to 2 u.c. film, which way below critical thickness exhibiting ferroelectricity reported previous research works. Upon fitting mathematically direct tunneling model, it could be seen...
Oxide heterostructures have attracted a lot of interest because their rich exotic phenomena and potential applications. Recently, greatly enhanced tunneling electroresistance (TER) ferroelectric tunnel junctions (FTJs) has been realized in such heterostructures. However, our understanding on the electronic structure resistance response with polarization reversal origin huge TER is still lacking. Here, we report structures, particularly at interface surface, control spontaneous BaTiO3 films...
The polygon-like resonant excitation of coupled skyrmions can be controlled in nanoscale magnets by a dual-frequency microwave field.