A5028493619- Magnetic and transport properties of perovskites and related materials
- Magnetic properties of thin films
- Heusler alloys: electronic and magnetic properties
- Advanced Memory and Neural Computing
- Electronic and Structural Properties of Oxides
- Multiferroics and related materials
- Ferroelectric and Negative Capacitance Devices
- Topological Materials and Phenomena
- 2D Materials and Applications
- ZnO doping and properties
- Magnetic Properties and Applications
- Advanced Condensed Matter Physics
- Ferroelectric and Piezoelectric Materials
- Physics of Superconductivity and Magnetism
- Thermal Expansion and Ionic Conductivity
- Graphene research and applications
- Quantum and electron transport phenomena
- Copper-based nanomaterials and applications
- Magnetic Properties and Synthesis of Ferrites
- Advanced Sensor Technologies Research
- Advanced Thermoelectric Materials and Devices
- Wireless Power Transfer Systems
- Characterization and Applications of Magnetic Nanoparticles
- Extracellular vesicles in disease
- Semiconductor materials and devices
National University of Singapore
1997-2025
Nanyang Technological University
2018
Sun Yat-sen University
2013-2015
State Key Laboratory of Optoelectronic Materials and Technology
2014
All-electric switching of perpendicular magnetization is a prerequisite for the integration fast, high-density, and low-power magnetic memories logic devices into electric circuits. To date, field-free spin-orbit torque (SOT) has been observed in SOT bilayer trilayer systems through various asymmetric designs, which mainly aim to break mirror symmetry. Here, we report that CoxPt100-x single layers within special composition range (20 < x 56) can be deterministically switched by electrical...
Abstract The electrical control of the non-trivial topology in Weyl antiferromagnets is great interest for development next-generation spintronic devices. Recent studies suggest that spin Hall effect can switch topological antiferromagnetic order. However, switching efficiency remains relatively low. Here, we demonstrate effective manipulation order semimetal Mn 3 Sn using orbital torques originating from either metal or oxide CuO x . Although convert current to on its own, find inserting a...
We report reversible bipolar resistance switching behaviors in transparent indium-tin oxide (ITO)/LaAlO3/SrTiO3 memristors at room temperature. The exhibit high optical transparency, long retention, and excellent antifatigue characteristics. performances are promising for employing ITO/LaAlO3/SrTiO3 nonvolatile memory logic devices. could be attributed to the migration of positively charged oxygen vacancies from SrTiO3 substrate LaAlO3 film, resulting Poole-Frenkel emission low state...
Two-dimensional (2D) magnets have raised enormous attention because of their stable long-range magnetic orders and anomalous physics at 2D limits. Spin glass states are normally discovered in disordered systems with spin frustration, which rarely found crystalline materials. Here, the chemical vapor-deposited rhombohedral Cr2Se3 nanosheets could be grown down to a thickness 1.9 nm, shown hard magnetism large coercivity 1.5 kOe exhibited thermal irreversibility. A state freezing temperature...
In order to advance the silicon integrated circuit technology, researchers have been searching for memory and logic devices with new physical state variables other than charge. Spin device that adds one degree of freedom-electron spin charge has considered as a promising candidate due its low power consumption, built-in memory, high scalability. Here, we demonstrate variable – current direction on sample can be introduced into operation. The is vector. For various input currents along...
Anomalous Hall effect (AHE) in ferrimagnetic Mn4N epitaxial films grown by molecular-beam epitaxy is investigated. The longitudinal conductivity σxx within the superclean regime, indicating a highly conducting material. We further demonstrate that AHE signal 40-nm-thick mainly due to extrinsic contributions based on analysis fitted ρAH=a′ρxx0+bρxx2 and σAH∝σxx. Our study not only provide strategy for theoretical work antiperovskite manganese nitrides but also shed promising light utilizing...
Electrically manipulating magnetic moments by spin–orbit torque (SOT) has great potential applications in memories and logic devices. Although there have been rich SOT studies on heterostructures, low interfacial thermal stability high switching current density still remain an issue. Here, highly textured, polycrystalline Heusler alloy MnxPtyGe (MPG) films with various thicknesses are directly deposited onto thermally oxidized silicon wafers. The perpendicular magnetization of the MPG single...
The oxide ferromagnet ${\mathrm{La}}_{0.67}{\mathrm{Sr}}_{0.33}\mathrm{Mn}{\mathrm{O}}_{3}$ (LSMO) possesses low saturation magnetization $({M}_{s})$, a magnetic damping constant $(\ensuremath{\alpha})$, and high carrier spin polarization, which promise superior functionalities in spintronics devices. For applications, these devices are to be integrated into electronic circuits, require the control of LSMO by electrical means. However, reliable switching method remains largely unexplored....
Unidirectional magnetoresistance (UMR) has been intensively studied in ferromagnetic systems, which is mainly induced by spin-dependent and spin-flip electron scattering. Yet, UMR antiferromagnetic (AFM) systems not fully understood to date. In this work, we reported a YFeO3/Pt heterostructure where YFeO3 typical AFM insulator. Magnetic-field dependence temperature of transport measurements indicate that magnon dynamics interfacial Rashba splitting are two individual origins for UMR,...
Current-induced spin–orbit torque (SOT) switching of magnetization has attracted great interest due to its potential application in magnetic memory devices, which offer low-energy consumption and high-speed writing. However, most the SOT studies on perpendicularly magnetized anisotropy (PMA) magnets have been limited heterostructures with interfacial PMA poor thermal stability. Here, we experimentally demonstrate a for ferrimagnetic D022-Mn3Ge film high bulk robust stability factor under...
Spin-orbit torque (SOT)-induced switching of perpendicular magnetization in the absence magnetic field is crucial for application SOT-based spintronic devices. Recent works have demonstrated that low-symmetry crystal structure CuPt/CoPt can give rise to an out-of-plane (OOP) spin and lead deterministic without external field. However, it essential improve OOP effective efficient switching. In this work, impact interface oxidation on generation a CuPt/ferromagnet heterostructure...
Due to its nontrivial topological state, a magnetic Weyl semimetal often exhibits exotic transport properties that are important for both fundamental physics and potential spintronics applications. In this Letter, we investigate the composition dependences of structural order, magnetism, epitaxial Heusler alloy CoxMnGay (CMG) films grown via molecular beam epitaxy. Our results show saturated magnetization, anomalous Hall conductivity, angle CMG influenced by order. Specifically, observed...
The first concerned question on the fundamental physics of resistive switching (RS) effect in metal/Nb-doped SrTiO3 junctions is whether RS does take place at whole interface or some local regions interface. Even though several investigations provide clues filamentary nature RS, direct evidences are still required. Moreover, there obvious inconsistency between possible feature and observed capacitance-voltage (C-V) hysteresis loops. Here, we report a Pt/Nb-doped junctions. virgin Pt/NSTO...
Single-phase and oxygen doped Mn2N0.86 thin films have been grown on MgO (111) by plasma-assisted molecular beam epitaxy. The grow under tensile strain and, remarkably, they show ferromagnetic-like interactions at low temperature ferromagnetic ordering agreed well with the Bloch-law T3/2 room-temperature. We further demonstrate enlarged Mn 3s splitting (6.46 eV) its possible relation to observed ferromagnetism. Our study not only provide a strategy for theoretical work manganese nitrides,...
Manganese nitrides thin films on MgO (100) substrates with and without Cu-doping have been fabricated by plasma assisted molecular beam epitaxy. Antiperovskite compounds Mn3.6Cu0.4N grown in the case of Cu-doping, pure Mn3N2 single crystal has obtained Cu-doping. The exhibits ferrimagnetism, magnetization increases upon temperature decreasing from 300 K to 5 K, similar Mn4N. exchange bias (EB) effects emerge films. EB behavior is originated interfaces between ferrimagnetic antiferromagnetic...
A Mn3O4 film with a coexistence of two preferential orientations has been grown on Pt(111)//Si(100) substrate by plasma-assisted molecular beam epitaxy. The structural characteristics and chemical compositions the are investigated using X-ray diffraction, Raman, photoelectron spectra in detail. Together magnetic tests, is demonstrated to be polycrystalline hausmannite no other impurities. Moreover, hysteresis loops found display step or characteristic shrinking at low fields. On hand,...
Nonvolatile write-once-read-many-times (WORM) Pt/Al2O3/ITO memory devices prepared at room temperature were demonstrated. The WORM show irreversible transition from the initial low resistance (ON) state to high (OFF) state, ON/OFF ratio, long data retention, and good reading endurance in air temperature. performances are promising for employing permanent storage of information. nonvolatile behaviors could be attributed formation rupture conductive filament consisting positively charged...
Magnetic Weyl semimetals (MWSMs) exhibit unconventional transport phenomena, such as large anomalous Hall (and Nernst) effects, which are absent in spatial inversion asymmetry WSMs. Compared with its nonmagnetic counterpart, the magnetic state of a MWSM provides an alternative way for modulation topology. Spin-orbit torque (SOT), effective means electrically controlling states ferromagnets, may be used to manipulate topological MWSMs. Here we confirm high-quality Co2MnGa film by...
Anomalous Hall effect (AHE) has been studied for ferrimagnetic antiperovskite Mn4−xDyxN films grown by molecular-beam epitaxy. The introduction of Dy changes the AHE dramatically, even its sign, while variations in magnetization are negligible. Two sign reversals (negative-positive-negative) ascribed to variation charge carriers as a result Fermi surface reconstruction. We further demonstrate that current JAH is dissipationless (independent scattering rate), confirming anomalous...
We report a large enhancement of the spin-orbit-torque (SOT) efficiency achieved by inserting an ultrathin $\mathrm{Co}$ layer between single-crystal $\mathrm{Pt}$ and epitaxial ${\mathrm{Ni}}_{81}{\mathrm{Fe}}_{19}$ layer. attribute this to strong interfacial orbital hybridization $\mathrm{Co}$. Another effect is spin-rotation based on out-of-plane component magnetic moment, which explains observation torques. Our results offer effective approach engineer SOT in conventional...
The discovery of ferromagnetism in van der Waals (vdW) materials has enriched the understanding two-dimensional (2D) magnetic orders and opened new avenues for fundamental physics research next generation spintronics. However, achieving ferromagnetic order at room temperature, along with strong perpendicular anisotropy, remains a significant challenge. In this work, we report wafer-scale growth vdW ferromagnet Fe