Hengan Zhou

ORCID: 0000-0001-5621-8138
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About
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Research Areas
  • Magnetic properties of thin films
  • Magneto-Optical Properties and Applications
  • Multiferroics and related materials
  • Quantum and electron transport phenomena
  • Magnetic and transport properties of perovskites and related materials
  • Physics of Superconductivity and Magnetism
  • Topological Materials and Phenomena
  • Advanced Memory and Neural Computing
  • Magnetic Properties and Applications
  • Magnetic Field Sensors Techniques
  • Theoretical and Computational Physics
  • Ferroelectric and Negative Capacitance Devices
  • 2D Materials and Applications
  • Advanced Condensed Matter Physics
  • Characterization and Applications of Magnetic Nanoparticles
  • ZnO doping and properties
  • Quantum many-body systems
  • Face recognition and analysis
  • China's Ethnic Minorities and Relations
  • Ga2O3 and related materials
  • Organic and Molecular Conductors Research
  • GaN-based semiconductor devices and materials
  • Perovskite Materials and Applications
  • Semiconductor materials and devices
  • Metallic Glasses and Amorphous Alloys

Tsinghua University
2018-2024

Beijing Academy of Quantum Information Sciences
2020-2024

National University of Singapore
2023-2024

State Key Laboratory of Low-Dimensional Quantum Physics
2020-2023

Collaborative Innovation Center of Quantum Matter
2020-2022

Lanzhou University
2011-2018

University of Manitoba
2016

Tongji University
2015

Institute of Solid State Physics
2015

We investigate the current-induced switching of N\'eel order in $\mathrm{NiO}(001)/\mathrm{Pt}$ heterostructures, which is manifested electrically via spin Hall magnetoresistance. Significant reversible changes longitudinal and transverse resistances are found at room temperature for a current threshold lying range $1{0}^{7}\text{ }\text{ }\mathrm{A}/{\mathrm{cm}}^{2}$. The order-parameter ascribed to antiferromagnetic dynamics triggered by (current-induced) antidamping torque, orients...

10.1103/physrevlett.120.207204 article EN publisher-specific-oa Physical Review Letters 2018-05-16

Manipulation of magnetization by electric-current-induced spin-orbit torque (SOT) is great importance for spintronic applications because its merits in energy-efficient and high-speed operation. An ideal material SOT should possess high charge-spin conversion efficiency electrical conductivity. Recently, transition metal dichalcogenides (TMDs) emerge as intriguing platforms study their controllability coupling, conductivity, energy band topology. Although TMDs show potentials applications,...

10.1002/adma.202000513 article EN Advanced Materials 2020-03-16

Abstract Room-temperature skyrmions in magnetic multilayers are considered to be promising candidates for the next-generation spintronic devices. Several approaches have been developed control skyrmions, but they either cause significant heat dissipation or require ultrahigh electric fields near breakdown threshold. Here, we demonstrate electric-field of through strain-mediated magnetoelectric coupling ferromagnetic/ferroelectric multiferroic heterostructures. We show process non-volatile...

10.1038/s41467-020-20528-y article EN cc-by Nature Communications 2021-01-12

Abstract The electrical control of the non-trivial topology in Weyl antiferromagnets is great interest for development next-generation spintronic devices. Recent studies suggest that spin Hall effect can switch topological antiferromagnetic order. However, switching efficiency remains relatively low. Here, we demonstrate effective manipulation order semimetal Mn 3 Sn using orbital torques originating from either metal or oxide CuO x . Although convert current to on its own, find inserting a...

10.1038/s41467-024-45109-1 article EN cc-by Nature Communications 2024-01-25

A broken interfacial inversion symmetry in ultrathin ferromagnet/heavy metal (FM/HM) bilayers is generally believed to be a prerequisite for accommodating the Dzyaloshinskii-Moriya interaction (DMI) and stabilizing chiral spin textures. In these bilayers, strength of DMI decays as thickness FM layer increases vanishes around few nanometers. present study, through synthesizing relatively thick films compositions CoPt or FePt, CoCu FeCu, FeGd FeNi, contributions from composition...

10.1103/physrevlett.128.167202 article EN Physical Review Letters 2022-04-20

Abstract Memristors, demonstrated by solid‐state devices with continuously tunable resistance, have emerged as a new paradigm for self‐adaptive networks that require synapse‐like functions (artificial synapse, example). Spin‐based memristors offer advantages over other types of because their significant endurance and high energy efficiency. Yet it remains challenge to build dense functional spintronic structures materials are compatible existing ferromagnetic devices. Here, memristive device...

10.1002/aelm.201800782 article EN Advanced Electronic Materials 2019-01-30

Noninteracting particles exhibiting Brownian motion have been observed in many occasions of sciences, such as molecules suspended liquids, optically trapped microbeads, and spin textures magnetic materials. In particular, a detailed examination is important for designing thermally stable spintronic devices, which motivates the present study. this Letter, through using temporally spatially resolved polar magneto-optic Kerr effect microscopy, we experimentally thermal fluctuation-induced...

10.1103/physrevlett.125.027206 article EN Physical Review Letters 2020-07-10

Abstract Magnetic skyrmions, topological‐chiral spin textures, have potential applications in next‐generation high‐density and energy‐efficient spintronic devices for information storage logic technologies. Tailoring the detailed textures of skyrmions is pivotal importance tuning skyrmion dynamics, which one key factors design skyrmionic devices. Here, direct observation parallel aligned elliptical magnetic Pt/Co/Ta multilayers with an oblique‐angle deposited Co layer reported. Domain wall...

10.1002/adma.202006924 article EN Advanced Materials 2021-02-18

Electrical switching of topological antiferromagnetic states in Mn3Sn thin films has been a subject active investigation. However, dependences behaviors on the film thickness, external field, and crystal orientation remain to be fully explored, which motivate present study. In this work, (112̄0)-orientated are fabricated sapphire substrates, large anomalous Hall effect over wide temperature range (270–400 K) can identified. The current-induced spin–orbit torques (SOTs) utilized electrically...

10.1063/5.0156266 article EN cc-by APL Materials 2023-07-01

Conventional spintronics exploit predominately the properties of ferromagnets (FM). The functionalities related devices suffer from two detrimental aspects including stray fields and gigahertz (GHz) spin dynamics. These intrinsic limits FMs can be overcome in antiferromagnets (AFMs), resulting their vanished field, faster dynamics terahertz (THz) range. On other hand, AFMs are typically inert to external magnetic fields. A reliable writing, more importantly, an accurate read-out these AFM...

10.7566/jpsj.90.081006 article EN Journal of the Physical Society of Japan 2021-05-24

In this letter, spin rectification was used to study the electric field controlled dynamic magnetic properties of multiferroic composite which is a Co stripe with induced in-plane anisotropy deposited onto Pb(Mg1∕3Nb2∕3)O3-PbTiO3 substrate. Due coupling between piezoelectric and magnetoelastic effects, reversible switching has been realized by varying history applied field. This merit results from hysteresis polarization in nonlinear regime, proved butterfly type dependence Moreover,...

10.1063/1.4867881 article EN Applied Physics Letters 2014-03-10

The discovery of magnetic skyrmions provides a promising pathway for developing functional spintronic memory and logic devices. Towards the future high-density application, nanoscale with miniaturized diameters, ideally down to 20 nm are required. Using x-ray circular dichroism transmission microscopy, observed in [Pt/Co/Ir] 15 multilayer at room temperature. In particular, small minimum diameters approaching could be generated by current-induced spin-orbit torques. Through implementing...

10.1088/0256-307x/39/1/017501 article EN Chinese Physics Letters 2022-01-01

Unidirectional magnetoresistance (UMR) has been intensively studied in ferromagnetic systems, which is mainly induced by spin-dependent and spin-flip electron scattering. Yet, UMR antiferromagnetic (AFM) systems not fully understood to date. In this work, we reported a YFeO3/Pt heterostructure where YFeO3 typical AFM insulator. Magnetic-field dependence temperature of transport measurements indicate that magnon dynamics interfacial Rashba splitting are two individual origins for UMR,...

10.1021/acs.nanolett.3c01082 article EN Nano Letters 2023-07-07

Effective spin mixing conductance (ESMC) across the nonmagnetic metal (NM)/ferromagnet interface, Hall conductivity (SHC) and diffusion length (SDL) in NM layer govern functionality performance of pure current devices with pumping technique. We show that all three parameters can be tuned significantly by orbit coupling (SOC) strength systems consisting ferromagnetic insulating Y3Fe5O12 metallic Pd1-xPtx layer. Surprisingly, ESMC is observed to increase x changing from 0 1.0. The SHC PdPt...

10.1002/aelm.201600112 article EN Advanced Electronic Materials 2016-08-31

Fabricating new skyrmion-hosting materials and characterizing their topological spin textures are crucial for next-generation spintronic devices. Here, the authors successfully stabilize ferrimagnetic Neel-type skyrmions in heavy-metal-free multilayer CoTb films through interfacing with noncollinear antiferromagnet Mn${}_{3}$Sn layers, which chirality can be controlled by opposite stacking order. Further, a Lorentz scanning transmission electron microscopy technique is employed to resolve...

10.1103/physrevmaterials.5.084406 article EN Physical Review Materials 2021-08-13

Abstract Van der Waals materials are attracting great attention in the field of spintronics due to their novel physical properties. For example, they utilized as spin‐current generating spin–orbit torque (SOT) devices, which offers an electrical way control magnetic state and is promising for future low‐power electronics. However, SOTs have mostly been demonstrated vdW with strong coupling (SOC). Here, observation a current‐induced SOT h‐BN/SrRuO 3 bilayer structure reported, where material...

10.1002/adma.202109449 article EN Advanced Materials 2022-06-25

Compensated ferrimagnets (FIMs) made of rare-earth transition-metal compounds have stimulated increasing interest for enabling fast spin dynamics. Taking $\mathrm{Fe}$-$\mathrm{Tb}$ as an example, substantial efforts been on the study compensated magnetism and its potential spintronic applications. Current-induced spin-orbit torque (SOT) switching evolution with ferrimagnetism in these compounds, however, remain to be systematically explored, which motivates present study. By combining...

10.1103/physrevapplied.19.034088 article EN Physical Review Applied 2023-03-27

The spatial symmetry of spin pumping, i.e., the voltage amplitude inverse Hall effect varying with orientation static magnetization and polarization direction a dynamic magnetic field, has been systematically studied both theoretically experimentally. This is quite important because it unique foundation criterion for identifying pumping signal from other contributions to unveiling underlying physics pure current. As straightforward proof, we found mixing conductance be out-of-plane...

10.1103/physrevb.94.134421 article EN Physical review. B./Physical review. B 2016-10-17

The Hall effect has played a vital role in unraveling the intricate properties of electron transport solid materials. Here, we report on crystal symmetry-dependent in-plane (CIHE) observed CuPt/CoPt ferromagnetic heterostructure. Unlike planar (PHE), CIHE strongly depends current flowing direction (ϕI) with respect to structure. It reaches its maximum when is applied along low crystal-symmetry axes and vanishes high axes, exhibiting an unconventional angular dependence cos(3ϕI). Utilizing...

10.1021/acs.nanolett.3c04242 article EN Nano Letters 2024-01-03

Magnon chirality refers to the precessional handedness of magnetization around external magnetic field, which is fixed as right-handed in ferromagnets. Compensated ferrimagnets accommodate parallel and antiparallel configurations net angular momentum, thus serve an ideal platform for studying magnon chirality. Through performing spin-torque ferromagnetic resonance experiments, we experimentally study reversal low-frequency across momentum compensation temperatures a Gd_{3}Fe_{5}O_{12}/Pt...

10.1103/physrevlett.133.166705 article EN cc-by Physical Review Letters 2024-10-17

In this letter, we propose a dc electrical detection method for investigating the spin dynamics of ferromagnetic thin films. Based on anomalous Hall effect (AHE), out-of-plane component dynamic magnetization can directly rectify rf current into time-independent voltage at resonance. This is applied studying damping mechanism in Co90Zr10 The thickness dependent zero-frequency linewidth and effective Gilbert are related to surface roughness microstructure evolution. Compared with standard...

10.1063/1.4807460 article EN Applied Physics Letters 2013-05-20

Abstract The explosive demands of storage capacity and the von Neumann bottleneck modern computer architectures trigger many innovations in information technology. Amongst them, nonvolatile spintronics attract considerable attentions for which can embed computation capability into memory, enable neuromorphic, probabilistic computing. These exciting progresses typically rely on manipulation relative magnetization orientations two magnetic layers. By extending to 3D spintronic made multiple...

10.1002/adfm.202007485 article EN Advanced Functional Materials 2020-12-06

Abstract Interfacially asymmetric magnetic multilayers made of heavy metal/ferromagnet have attracted considerable attention in the spintronics community for accommodating spin‐orbit torques (SOTs) and meanwhile hosting chiral spin textures. In these multilayers, accompanied interfacial Dzyaloshinskii–Moriya interaction (iDMI) permits formation Néel‐type While significant progresses been Co, CoFeB, Co 2 FeAl, CoFeGd based it would be intriguing to identify new that could enable spin‐torque...

10.1002/adfm.202104426 article EN Advanced Functional Materials 2021-08-12

We report the observation of a transverse dc voltage which appears when radio frequency (rf) current flows along longitudinal direction ferromagnetic Hall device. This effect is fully explained through spin rectification enabled by anomalous effect, nonlinear coupling between dynamic magnetization and rf current. The observed resonant feature angular dependent line shape are related to precession driven magnetic field. suggests method for detection field vector.

10.1063/1.4799248 article EN Journal of Applied Physics 2013-04-15
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