A5003633882- Magnetic properties of thin films
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- ZnO doping and properties
- Physics of Superconductivity and Magnetism
- Quantum and electron transport phenomena
- Magnetic Properties and Applications
- Characterization and Applications of Magnetic Nanoparticles
- Magnetic and transport properties of perovskites and related materials
- Semiconductor materials and devices
- Nanoporous metals and alloys
- Physical Unclonable Functions (PUFs) and Hardware Security
- Metallic Glasses and Amorphous Alloys
- Graphene research and applications
- Metal and Thin Film Mechanics
- Advancements in Semiconductor Devices and Circuit Design
Huawei Technologies (China)
2021-2023
Huazhong University of Science and Technology
2017-2022
Wuhan National Laboratory for Optoelectronics
2021
Magnetic skyrmion, a nanosized spin texture with topological property, has become an area of significant interest due to the scientific insight that it can provide and also its potential impact on applications such as ultra-low-energy ultra-high-density logic gates. In quest for reconfiguration single device implementation complete functions, novel reconfigurable skyrmion (RSL) is proposed verified by micromagnetic simulations. Logic functions including AND, OR, NOT, NAND, NOR, XOR, XNOR are...
Skyrmions have received considerable attention in various studies since the experimental observation magnetic materials 2009. Skyrmions, which are topological, particle-like localized structures, show significant fundamental research value field of physics and also regarded as novel information carriers that potential for use developing high-density, low-power, multi-functional spintronic devices. In this Perspective, we first overview development, structure, skyrmions. Subsequently, focus...
Abstract Memristors, demonstrated by solid‐state devices with continuously tunable resistance, have emerged as a new paradigm for self‐adaptive networks that require synapse‐like functions (artificial synapse, example). Spin‐based memristors offer advantages over other types of because their significant endurance and high energy efficiency. Yet it remains challenge to build dense functional spintronic structures materials are compatible existing ferromagnetic devices. Here, memristive device...
Anisotropy engineering was exploited to prevent the skyrmion Hall effect that is bad for application in memory.
A novel voltage-controlled skyrmion memristor (VCSK-Memristor) based on a multiferroic heterostructure is proposed and studied. Under electric-field-modulated magnetic anisotropy via remnant strain, continuously tunable resistance obtained in VCSK-Memristor due to the size modulation ferromagnetic layer. Geometrical scaling studies are performed provide guidelines for design optimization of this newly spintronic device. The results indicate that advantageous fabricating energy-efficient...
Information security is of great importance for the approaching Internet things (IoT) era. Physically unclonable functions (PUFs) have been intensively studied information security. However, silicon PUFs are vulnerable to hazards such as modeling and side-channel attacks. Here we demonstrate a magnetic analogue PUF based on perpendicularly magnetized Ta/CoFeB/MgO heterostructures. The perpendicular anisotropy originates from CoFeB/MgO interface, which sensitive subnanometer variation MgO...
In materials with the gradient of magnetic anisotropy, spin-orbit-torque-induced magnetization behaviour has attracted attention because its intriguing scientific principle and potential application. Most behaviours microscopically originate from domain wall motion, which can be precisely depicted using standard cooperative coordinate method (CCM). However, motion in anisotropy CCM remains lack investigation. this paper, by adopting CCM, we established a set equations to quantitatively...
Many concepts for skyrmion-based devices have been proposed, and most of their possible applications are based on the motion skyrmions driven by a dc current in an area with constricted geometry. However, skyrmion pulsed has not investigated so far. In this work, we propose high-frequency signal generator pulsed-current-driven circular square-shaped film micromagnetic simulation. The results indicate that can move closed curve central symmetry. trajectory cycle period be adjusted tuning size...
In this study, current-induced partial magnetization-based switching was realized through the spin–orbit torque (SOT) in single-layer L10 FePt with a perpendicular anisotropy (Ku⊥) of 1.19 × 107 erg·cm−3 (1 = 0.1 J·m−3), and its corresponding SOT efficiency (βDL) 8 10−6 Oe·(A·cm−2)−1 Oe 79.57747 A·m−1), which is several times higher than that traditional Ta/CoFeB/MgO structure reported past work. The films originated from structural inversion asymmetry since dislocations defects were...
In the quest for novel, scalable and energy-efficient computing technologies, spin-based logic devices are being extensively explored due to their potential nonvolatility, small cell area, low operational power. Spin torque majority gate (STMG) is one of most promising options beyond CMOS nonvolatile circuits normally-off computing. However, significant problems arose with cascade-ability, signal nonreciprocity, complicated circuit configurations based on STMG. this paper, a novel magnetic...
A domain wall can be driven back and forth in a continuous manner ferromagnetic (FM) layer by applying in-plane positive or negative current pulses along the heavy-metal (HM) layer, as reported Long You co-workers article number 1800782. Utilizing spin-orbit torque that exerts on CoFeB magnetization results memristive (synapse-like) functions.
A novel thermally assisted skyrmion memory (TA-SKM) has been proposed and studied for the first time. Unidirectional current-induced spin transfer torque (STT) Joule heating effect are used to induce magnetization switching between uniform states in free layer of a magnetic tunnel junction device. Physics-based simulations suggest that TA-SKM offers advantages including unipolar feature cross-point integration, better TMR design as compared STT-MRAM, improved operation temperature range TA-MRAM.
We experimentally investigate spin-orbit torque (SOT) switching of a hybrid exchange spring system (ESS) in which Co/Pt with perpendicular magnetic anisotropy (PMA) is coupled to CoFeB thin film an in-plane (IP) (IMA). The magnetization tilt angle from the out-of-plane can be easily tuned by varying thickness IMA layer due competition between PMA and layers. find that highly 0° 90° over small range thicknesses, 0 1 nm. tilted films high thermal stability are promising materials for zero/low...
Multi-junctional magnetic tunneling junction spin dice based on orthogonal spin-transfer devices, a new type of true random number (RN) generator (TRNG) is demonstrated in this paper. Orthogonal devices use planar polarizer to push the free layer with perpendicular anisotropy metastable state (high-energy state) when power on. The stochastic precessional switching behavior ferromagnetic utilized as entropy source TRNG. Once turned off, field and demagnetization relax magnetization from one...
Integrators are widely used in industrial controls, signal processing, and computing. However, traditional resistor–capacitor integrators incur leakage errors zero drift, hindering their accuracy. By contrast, spintronic devices with good scalability endurance for memory logic applications digital circuits have yet to be studied analog circuit elements. Here, we propose a single-device integrator based on the current-controlled magnetic domain wall (DW). Continuous DW motion correlated...