A5053488508- Magnetic properties of thin films
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Magnetic and transport properties of perovskites and related materials
- 2D Materials and Applications
- Multiferroics and related materials
- Topological Materials and Phenomena
- Neural Networks and Reservoir Computing
- Theoretical and Computational Physics
- Graphene research and applications
- ZnO doping and properties
- Quantum and electron transport phenomena
- Advanced Materials Characterization Techniques
- Physics of Superconductivity and Magnetism
- Terahertz technology and applications
- Fusion materials and technologies
- Nanoporous metals and alloys
- Neuroscience and Neural Engineering
- Ferroelectric and Piezoelectric Materials
- Advanced Condensed Matter Physics
- Magnetic Properties and Applications
- Chalcogenide Semiconductor Thin Films
- Quantum Computing Algorithms and Architecture
- Magnetic Field Sensors Techniques
- Advanced Battery Materials and Technologies
Beihang University
2020-2025
Kunming University of Science and Technology
2024
Tianjin University
2024
Over the past few decades, diversified development of antiferromagnetic spintronics has made antiferromagnets (AFMs) interesting and very useful. After tough challenges, applications AFMs in electronic devices have transitioned from focusing on interface coupling features to achieving manipulation detection AFMs. As are internally magnetic, taking full use for information storage been main target research. In this paper, we provide a comprehensive description AFM coupling, read-out...
Chiral magnetic skyrmions are topological swirling spin textures that hold promise for future information technology. The electrical nucleation and motion of have been experimentally demonstrated in the last decade, while detection compatible with semiconductor processes has not achieved, this is considered one most crucial gaps regarding use real applications. Here, we report direct observation nanoscale CoFeB/MgO-based tunnel junction devices at room temperature. High-resolution force...
Antiferromagnetic insulators have recently been proved to support spin current efficiently. Here, we report the dampinglike spin-orbit torque (SOT) in Pt/NiO/CoFeB has a strong temperature dependence and reverses sign below certain temperatures, which is different from slight variation with Pt/CoFeB bilayer. The negative SOT at low temperatures proposed be mediated by magnetic interactions that tie "exchange bias" Pt/NiO/CoFeB, contrast thermal-magnon-mediated scenario high temperatures. Our...
Magnetic tunnel junctions (MTJs) are the core elements of spintronic devices. Now, mainstream writing operation MTJs mainly relies on electric current with high energy dissipation, which can be greatly reduced if an field is used instead. In this regard, strain-mediated multiferroic heterostructure composed MTJ and ferroelectrics promising advantages room temperature magnetic field-free as already demonstrated by in-plane anisotropy. However, there no such report perpendicular (p-MTJs), have...
Ferrimagnetic materials driven by spin–orbit torque (SOT) exhibit a distinctive characteristic of multistate magnetization switching and enable versatile applications.
Orbitronics provides novel mechanisms to generate terahertz (THz) emission using the orbital angular momentum of electrons. Here, we report a systematic investigation THz from <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"><a:mrow><a:mi mathvariant="normal">Ni</a:mi><a:mtext>/</a:mtext><a:mi>Cu</a:mi><a:msub><a:mi mathvariant="normal">O</a:mi><a:mi>x</a:mi></a:msub></a:mrow></a:math> heterostructures pumped by femtosecond laser pulse. Despite very weak spin-orbit coupling <d:math...
Abstract Antiferromagnets (AFM) hold significant promise as ideal candidates for high‐density and ultrafast memory applications. Electrical manipulation of exchange bias (EB) has emerged an effective solution to integrate AFMs into magnetic memories active elements. In particular, spin‐orbit torque antiferromagnetic random‐access (SOT‐ARAM) is recently been demonstrated by using AFM/FM hybrid free layer, which can simultaneously satisfy field‐free switching good device scalability. However,...
Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, mainstream writing operation MTJs is based on electric current with high energy dissipation, and it can be notably reduced if an field used instead. In this regard, promising for control MTJ in multiferroic heterostructure composed ferroelectrics via strain-mediated magnetoelectric coupling. However, there only reports in-plane anisotropy so far. Here, we investigate resistance state MgO-based...
Guided by electro-chemo-thermal simulations, the thermal tolerance, conductance, and overheating-response properties were rationally coupled in a separator for safe lithium batteries.
The magnetic skyrmion, a tiny texture that holds promise as the next-generation information carrier, has been widely studied in recent years. A fine tunability of skyrmion density is required for its real applications novel memory and logic devices. Here, we report on manipulation at room temperature Pt/Co/Ta/MgO system composed multiple repetitions with perpendicular anisotropy. N\'eel-type skyrmions are observed by performing Lorentz transmission electron microscopy force microscopy....
Two-dimensional (2D) semiconducting materials with anisotropic physical properties have induced lively interest due to their application in the field of polarizing devices. Herein, we designed a family penta-PtXY (X = Se, Te; Y S, X ≠ Y) monolayers and predicted electronic optical based on first-principles calculation. The results suggest that are indirect-gap semiconductors medium bandgap 2.29–2.66 eV. own remarkable mechanical anisotropy high Young's modulus ratio (3.0). In addition,...
Abstract Magnetic droplets, a class of highly nonlinear magnetodynamic solitons, can be nucleated and stabilized in nanocontact spin-torque nano-oscillators. Here we experimentally demonstrate magnetic droplets tunnel junctions (MTJs). The droplet nucleation is accompanied by power enhancement compared with its ferromagnetic resonance modes. stabilization are ascribed to the double-CoFeB free-layer structure all-perpendicular MTJ, which provides low Zhang-Li torque high pinning field. Our...
Spintronic oscillators are promising candidates for neuromorphic computing due to their true miniaturization, non-linearity and synchronization properties. However, spin torque nano-oscillators excited by current-induced spin-transfer which may cause high power consumption reliability problems. Spin Hall can realize higher energy efficiency, while relatively low emission limits further applications. Here, we demonstrate three-terminal magnetic tunnel junction based the combination of...
The Ising computer has great potential to solve complicated combinatorial optimization problems which beyond the capability of conventional unless two major obstacles easy-control high-speed low-power individual P-Bit and scalable large array are overcame. In this work, an ultra-fast field-free tunable by Spin Orbit Torque (SOT) Effect is proposed carefully verified throughout experimental measurement. Further, for first time, extreme 1-Bit quantization method against device variation...
Leaky-integrate-fire (LIF) neurons are core components to construct a spiking neural network. The emulation of LIF has been implemented in spintronic devices, but typically suffers from challenges, such as relatively complex design and the requirement additional operations for resetting. In this Letter, we propose compact neuron device realized within single spin–orbit torque (SOT) magnetic tunnel junction device. Distinct standard memory input SOT current integrating process is applied...
A double-interface CoFeB/MgO magnetic tunnel junction (MTJ) has a high thermal stability barrier (E) and high-efficiency magnetization switching with the scaling of device dimensions. However, compared to single-interface MTJ, its more complicated film stacks interfaces are vulnerable irradiation-induced swift heavy ions. We have studied irradiation effects Ta/Kr ions on MTJs. Structural physical analyses performed through transmission electron microscopy, energy dispersive x-ray...
For the first time, we demonstrate three terminal magnetic random access memory (MRAM) devices with immunity to fields up 2 T. This is accomplished by adopting an IrMn/CoFeB composite free layer, where in-plane magnetized CoFeB layer stabilized exchange bias (EB) at interface, rather than shape anisotropy. data writing, realize electrical field reversal of EB, thus switching which then detected tunneling magnetoresistance (TMR) ratios exceeding 100 %. Through injecting currents into Pt...
Quantized Convolutional Neural Network (QCNN) is an attractive approach that reduces hardware overheads, especially for energy-constrained systems. However, existing QCNNs still require non-trivial resources and memory capacity in order not to compromise model accuracy. To address this issue, we propose antiferromagnetic magnetic random-access (ARAM)-based processing-in-memory (PIM) system, leveraging bit-level sparsity. Three optimization techniques are proposed optimize resource...
Current-induced antiferromagnetic (AFM) switching remains critical in spintronics, yet the interplay between thermal effects and spin torques still lacks clear clarification. Here we experimentally investigate thermally interplayed spin-orbit torque induced AFM magnetic tunnel junctions via pulse-width dependent reversal time-resolved measurements. By introducing Langevin random field into precession equation, establish a novel model that anatomically explains experimental observations. Our...