A5024529690- Magnetic properties of thin films
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Magnetic and transport properties of perovskites and related materials
- Physics of Superconductivity and Magnetism
- Quantum many-body systems
- Neural Networks and Reservoir Computing
- Quantum and electron transport phenomena
- Characterization and Applications of Magnetic Nanoparticles
- Magnetic Properties and Applications
- Magneto-Optical Properties and Applications
- Magnetic Field Sensors Techniques
- Quantum-Dot Cellular Automata
- Quantum Information and Cryptography
- Cellular Automata and Applications
- Semiconductor materials and devices
China University of Geosciences
2021-2025
Shandong Institute of Automation
2021-2025
Ministry of Education of the People's Republic of China
2021-2025
Xi’an University of Posts and Telecommunications
2008
Shanghai Liangyou (China)
2007
For real-world applications, it is desirable to realize field-free spin–orbit torque (SOT) switching in thin films with high perpendicular magnetic anisotropy (PMA). In this paper, we report that SOT a L10-FePt single layer large ratio of 26% obtained by using MgO ⟨100⟩⋀8°/⟨100⟩ miscut substrate. It found depends on the direction imposed pulse current. Only when electric current along y (010)-direction but not x (100)-direction does happen, which can be attributed tilted PMA induced symmetry...
$L{1}_{0}$-phase $\mathrm{Fe}\mathrm{Pt}$ is well known for its unusually robust perpendicular magnetic anisotropy (PMA) properties arising from strong conduction-electron spin-orbit coupling (SOC) with the $\mathrm{Fe}$ orbital moment. The PMA enables stable storage and memory devices ultrahigh capacity. Meanwhile, SOC also premise of recently discovered spin-orbit-torque (SOT) effect, which opens avenues possible electrical manipulation magnetization $L{1}_{0}$-$\mathrm{Fe}\mathrm{Pt}$....
Spintronic could be used to simulate synapses or neurons due its multistate storage characteristics. In this work, a reliable design of all-spin spiking neural networks (SNN) based on spin–orbit torque (SOT) devices has been proposed in A1 CoPt single layer. The CoPt-SOT exhibited field-free SOT switching, and the magnetization reversal mechanism was inferred combination domain nucleation domain-wall propagation as observed through magneto-optical Kerr microscopy images. Moreover,...
In this study, a memristor driven by spin–orbit torque (SOT) is realized in the nanoscale thickness L10 FePt systems with high perpendicular magnetization anisotropy (PMA). Due to domain nucleation and expansion current pulses, multilevel Hall resistance states can be continuously tuned density, where memristive are retained wall pinning effects. The properties of for samples different structures associated magnitude field-like torque, larger efficiency enhances multiple characteristics....
Current-induced field-free magnetization switching in single-layer films has been widely investigated for the application of spin–orbit torque (SOT) drivers low-power, high-density, and nano-sized memory. In this paper, we report SOT with threefold angle dependence A1 disordered CoPt using MgO (111) substrate. It is found that could not switch absence an external in-plane magnetic field when current was flowing direction mirror symmetry high-symmetry axis ([11–2]). While along low-symmetry...
Three-dimensional (3D) vector magnetic sensors play a significant role in variety of industries, especially the automotive industry, which enables control precise position, angle, and rotation motion elements. Traditional 3D integrate multiple with their sensing orientations along three coordinate axes, leading to large size inevitable nonorthogonal misalignment. Here, we demonstrate wide linearity range sensor utilizing single
Abstract While spin–orbit torque (SOT) devices are extensively investigated due to their potential for use in neural network computation, it remains challenging explore the hardware networks. In this paper, field‐free memristive SOT switching of CoPt single layer is used propose a neuromorphic circuit detecting edges images. Owing its threefold symmetry inversion, polarity can be reversed by rotating current 60°. Moreover, process current‐induced exhibits stable multi‐state magnetic...
In this study, current-induced partial magnetization-based switching was realized through the spin–orbit torque (SOT) in single-layer L10 FePt with a perpendicular anisotropy (Ku⊥) of 1.19 × 107 erg·cm−3 (1 = 0.1 J·m−3), and its corresponding SOT efficiency (βDL) 8 10−6 Oe·(A·cm−2)−1 Oe 79.57747 A·m−1), which is several times higher than that traditional Ta/CoFeB/MgO structure reported past work. The films originated from structural inversion asymmetry since dislocations defects were...
The application of spin–orbit torque (SOT) devices to neuromorphic computing platforms is focused on the development hardware circuit architectures. However, inter-device variability, integration modes and peripheral circuits, appropriate scenarios are still unclear, limiting SOT in computing. To solve this problem, paper first proposes a compensation scheme for difference resistance values devices, which solves variability problem at level. Moreover, synergistic with developed based...
Magnetic skyrmion, a nano-sized spin texture with topological property, have the potential to develop high-density, low-power, and multifunctional spintronic devices. To realize reconfiguration of single logic device implementation complete functions, new reconfigurable reusable skyrmion is proposed verified by micromagnetic simulation. Logic functions including AND, OR, NOT, NAND NOR are realized in ferromagnetic (FM) nanotrack skyrmion-edge repulsions voltage control magnetic anisotropy...
The current-induced perpendicular magnetization switching in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$L1$ </tex-math></inline-formula> <sub xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> -FePt single layer and Ta/FePt bilayer thin films was investigated. Here, (6 nm) single-layer film Ta (1–5 nm)/FePt were deposited on MgO substrate at 700 °C, showing good anisotropy with out-of-plane coercivity...
In order to maintain the thermal stability of SOT devices with nanoscale size, it is desirable achieve current induced magnetic switching in materials high perpendicular anisotropy. present paper, field-free FePt/[TiN/NiFe]5 achieved by interlayer exchange coupling, which in-plane magnetized NiFe serves as a coupling layer through TiN space layer. The large Ku (1.03 × 107 erg cc-1) and low critical density values (0.17 A cm-2) show great advantages energy consumption. Interestingly, found...