Mei Yuan

ORCID: 0000-0002-9758-7826
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About
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Research Areas
  • Perovskite Materials and Applications
  • Advanced Memory and Neural Computing
  • Human Pose and Action Recognition
  • Chalcogenide Semiconductor Thin Films
  • Video Analysis and Summarization
  • Organic Electronics and Photovoltaics
  • Ga2O3 and related materials
  • Hydraulic Fracturing and Reservoir Analysis
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • Luminescence Properties of Advanced Materials
  • ZnO doping and properties
  • Quantum Dots Synthesis And Properties
  • Ferroelectric and Piezoelectric Materials
  • CO2 Sequestration and Geologic Interactions
  • Multiferroics and related materials
  • Electronic and Structural Properties of Oxides
  • Enhanced Oil Recovery Techniques
  • Video Surveillance and Tracking Methods
  • Conducting polymers and applications

Peking University
2006-2022

Peking University Shenzhen Hospital
2017

Shandong University
2011

State Key Laboratory of Rare Earth Materials Chemistry and Application
2006

Beijing National Laboratory for Molecular Sciences
2006

Monodisperse lanthanide oxysulfide nanoplates and short nanorods were synthesized by the thermal decomposition of molecular precursors in presence oxygen. The have uniform thicknesses further self-organize to nanowires up micron scale. Eu2O2S Eu3+-doped Gd2O2S nanocrystals both show unusual fluorescence properties obviously differing from bulk powder phosphors, which are related surface-modification effects.

10.1021/ja0638410 article EN Journal of the American Chemical Society 2006-08-22

In conventional HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based resistive random access memory (RRAM), SiO is usually adopted as side wall spacer (low-k spacer) to define the device feature size. It found that forming voltage of RRAM with rises when size scaling down from 16.0 μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> 0.16 , which detrimental for application high density RRAM. this study, a permittivity...

10.1109/jeds.2018.2833504 article EN cc-by-nc-nd IEEE Journal of the Electron Devices Society 2018-01-01

Perovskite capped IGZO thin film transistor (TFT) is theoretically a promising new device for advanced photodetection and image sensing. This hybrid approach in principle combines the merits of low turn-off dark current TFT high absorption coefficient perovskite light absorber. However, during fabrication, solution-processed layer usually deteriorate performance TFTs. In order to achieve compatible fabrication conditions, films are deposited on TFTs by one-step two-step spin-coating methods,...

10.1109/nmdc.2017.8350557 article EN 2017-10-01

Organometal halide perovskite material was investigated as a promising candidate for resistive random-access memory (RRAM). In order to improve the stability of RRAM, polymethyl methacrylate (PMMA) interlayer inserted between and metal electrode. High ON-OFF current ratio (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> ) operating voltage low 0.5 V were achieved in PMMA encapsulated RRAM.

10.1109/edssc.2017.8126466 article EN 2017-10-01

BaTiO 3 (BTO) thin films were grown on (100) SrTiO (STO) single crystal substrates using the RF-magnetron sputtering technique (RFMS) in both pure argon and mixed Ar/O 2 (20% O ) atmosphere. A La 0.5 Sr CoO (LSCO) layer was deposited as bottom electrode by a 90° off-axis single-target RFMS. θ-2θ X-ray diffraction measurements showed that BTO cases had highly preferred c-axis orientation (001). From hysteresis measurements, it confirmed are ferroelectric. The ferroelectric polarizations 2Pr...

10.4028/www.scientific.net/amr.399-401.926 article EN Advanced materials research 2011-11-01

High performance perovskite photodetectors are realized by applying PC <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">61</sub> BM thin film as interfacial layer between the metal contact and materials. And photocurrent of device with interlayer is much larger than without interlayer. Furthermore, compared other bromine contents, MAPb(I xmlns:xlink="http://www.w3.org/1999/xlink">1-X</sub> Br xmlns:xlink="http://www.w3.org/1999/xlink">X</sub> )...

10.1109/nmdc.2017.8350554 article EN 2017-10-01

Person re-identification (Re-ID) aims to re-identify people across multiple video frames captured at various time instants. With the advancement of deep neural networks and increasing demand intelligent surveillance, recent works have proposed many learning based approaches address task. However, state-of-the-arts Re-ID methods are not robust enough do perform well on Synergy Re-Identification dataset provided by DeepSportRadar Player Challenge due severe occlusion problem. To better...

10.1145/3552437.3555692 article EN 2022-09-30
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